Infineon Technologies S80KS2564GACHB043

Overview

S80KS2564GACHB043 from Infineon Technologies is a 256 Mb pseudo-static RAM (PSRAM) based on self-refresh DRAM architecture, featuring HYPERBUS™ Extended-IO x16 interface, 1.8 V operation, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C). It delivers up to 800 MBps throughput via DDR transfers at 200 MHz, supports configurable burst lengths (16–128 words), and integrates autonomous refresh control to emulate SRAM behavior for host systems.

For engineers reviewing the S80KS2564GACHB043 datasheet, S80KS2564GACHB043 pinout, S80KS2564GACHB043 application, or S80KS2564GACHB043 equivalent, this device serves as a high-bandwidth, low-pin-count memory solution for automotive ADAS, infotainment, and domain controller designs requiring deterministic latency, partial array refresh, and deep power-down modes.

Technical Context

The S80KS2564GACHB043 implements a HYPERBUS™ Extended-IO interface with 20–21 signal count (single/differential clock), using LV-CMOS I/Os and center-aligned command/address transfers. Its internal logic manages self-refresh without host intervention, though burst length must be constrained to accommodate internal refresh cycles between transactions.

RWDS[1:0] operates bidirectionally: as an initial latency indicator during CA phase, as a source-synchronous read strobe edge-aligned with data, and as a write mask signal (HIGH = masked, LOW = valid) during write bursts - enabling 16-bit word-aligned writes and non-aligned merge operations.

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, with ball map per Infineon document 002-36092 Rev. *A Section 11.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020, the S80KS2564GACHB043 provides double density and +20% bandwidth - critical for multi-sensor fusion; versus S80KS1284GACHB043, it doubles capacity without changing layout or firmware initialization, easing future-proofing.

Availability

S80KS2564GACHB043 is available at Aetrix Electronics and suitable for automotive ADAS sensor fusion units, infotainment head units, and zone controller memory expansion requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.

Supply support for S80KS2564GACHB043 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets automotive and industrial embedded systems needing high-speed, low-pin-count memory with SRAM-like simplicity and DRAM-level density - optimized for ADAS, infotainment, and domain controllers.

FAQ

Does S80KS2564GACHB043 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that maintains DRAM cell charge without host intervention. The host only issues standard HYPERBUS™ commands; refresh occurs transparently during idle intervals or via partial array refresh triggered by internal timers - eliminating refresh-related software overhead and timing constraints.

What is the function of RWDS[1:0] during write transactions?

RWDS[1:0] serves as a per-word write mask during write bursts: when HIGH, the corresponding 16-bit DQ[15:0] word is ignored and not written to memory; when LOW, the word is valid and stored. This enables byte-aligned writes across non-contiguous addresses and supports merging fragmented data into aligned memory locations without read-modify-write cycles.

Can S80KS2564GACHB043 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per Infineon's recommended termination. The interface automatically adapts timing parameters, and all AC specifications in the datasheet apply to both configurations.

Is the 49-ball FBGA package lead-free and RoHS compliant?

Yes. The S80KS2564GACHB043 uses a lead-free, RoHS-compliant 49-ball FBGA package (7 mm × 7 mm, 0.8 mm pitch) with NiPdAu surface finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 and is qualified for reflow soldering per IPC/JEDEC J-STD-020D.1 standards.