Infineon Technologies S80KS2564GACHI040

Overview

S80KS2564GACHI040 from Infineon Technologies is a 256 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ Extended-IO x16 interface, operating at 1.8 V nominal supply, supporting DDR transfers up to 200 MHz and delivering up to 800 MBps throughput. It integrates on-die refresh control, eliminating host-managed refresh, and features configurable burst lengths (16–128 words), hybrid sleep mode, and 49-ball FBGA packaging for industrial temperature operation (–40°C to +85°C).

For engineers reviewing the S80KS2564GACHI040 datasheet, S80KS2564GACHI040 pinout, S80KS2564GACHI040 application, or S80KS2564GACHI040 equivalent, key selection considerations include HYPERBUS™ timing compliance, RWDS-based latency signaling, burst configuration register settings, and Deep Power Down current (15 μA) in low-power embedded systems.

Technical Context

This PSRAM implements a synchronous DDR interface with bidirectional RWDS used both as initial latency indicator and source-synchronous read strobe/write mask. Command/address and data share the same 16-bit DQ[15:0] bus, with six-byte CA transfer preceding each transaction.

The internal DRAM array uses 25 nm process technology and supports partial-array refresh (1/8, 1/4, 1/2) alongside full-array refresh. Memory access requires host adherence to tACC ≤ 35 ns and initial latency management signaled via RWDS during CA phase.

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, with standard ball map per Infineon document 002-31341 Rev. *C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020, S80KS2564GACHI040 delivers 4× density and 60% lower Deep Power Down current; versus S80KS1284GACHI040, it doubles capacity without changing layout or firmware timing parameters.

Availability

S80KS2564GACHI040 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, edge AI sensor gateways, and medical patient monitors requiring stable component supply and long-term lifecycle assurance.

Supply support for S80KS2564GACHI040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S80KS2564GACHI040 belongs to the HYPERRAM™ family, designed specifically to replace parallel NOR/NAND flash in high-bandwidth, low-pin-count embedded systems requiring SRAM-like simplicity with DRAM density.

FAQ

What is the function of RWDS[1:0] in read versus write transactions?

RWDS[1:0] serves three distinct roles: during command/address transfer, it signals required initial latency; during reads, it acts as a source-synchronous read data strobe with data edge-aligned to its transitions; during writes, it functions as a 16-bit write mask-HIGH disables the corresponding word, LOW enables it. This dual-role design eliminates need for separate strobe and mask signals.

Does S80KS2564GACHI040 require external refresh control from the host MCU?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods or between transactions. The host only needs to observe RWDS latency indicators and limit burst duration per datasheet Section 1.1 - no refresh commands or timing registers are exposed to software.

Can S80KS2564GACHI040 operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported using 20-signal configuration; differential clock (CK/CK#) is optional and uses 21 signals. Both modes comply with HYPERBUS™ timing specifications. CK# improves noise immunity in electrically noisy environments like automotive chassis, but is not required for functional operation.

How does burst length configuration affect system-level timing margins?

Burst length directly impacts maximum allowed transaction duration before internal refresh must occur. Longer bursts (e.g., 128-word) increase tRWR (read-write recovery) and require longer gaps between successive transactions. Configuration Register 0 bits [5:4] select burst type and length - incorrect setting may cause data corruption if refresh deadlines are missed.