Infineon Technologies S80KS2564GACHI043

Overview

S80KS2564GACHI043 from Infineon Technologies is a 256 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ Extended-IO x16 interface, 1.8 V supply, 200 MHz DDR clock, and 49-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in embedded systems requiring seamless SRAM-like access without host-managed refresh.

For engineers reviewing the S80KS2564GACHI043 datasheet, S80KS2564GACHI043 pinout, S80KS2564GACHI043 application, or S80KS2564GACHI043 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS bidirectional strobe behavior, burst length configurability (16–128 words), partial array refresh support, and industrial temperature operation (–40°C to +85°C).

Technical Context

The device implements a 25 nm DRAM array with integrated refresh control logic, presenting a static RAM interface to the host via HYPERBUS™ Extended-IO. Its DDR architecture transfers two 16-bit words per clock cycle on DQ[15:0], achieving up to 800 MBps throughput at 200 MHz.

Command/address and data share the same 16-bit DQ bus; RWDS[1:0] serves dual roles-indicating initial latency during CA transfer and acting as source-synchronous read strobe or write mask during data phases. Clocking supports single-ended (CK) or optional differential (CK/CK#) modes.

Key Specifications

Pinout & Package

49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, with ball map defined per Infineon datasheet Rev. *C section 11.1. Package supports automated optical inspection and fine-pitch PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and IS66WV12816EBLL-150B3LI, the S80KS2564GACHI043 delivers 4× density and 20% higher throughput within identical board area, while eliminating refresh management and reducing signal count by 50% versus parallel SRAM.

Availability

S80KS2564GACHI043 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI accelerators, and smart gateways requiring stable component supply across extended product lifecycles.

Supply support for S80KS2564GACHI043 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

The HYPERRAM™ product line targets high-performance embedded systems needing SRAM-like simplicity with DRAM density and bandwidth - optimized for MCU/SoC offload in resource-constrained edge devices.

FAQ

What is the purpose of the RWDS[1:0] signal in read vs. write operations?

RWDS[1:0] serves three distinct functions: during command/address transfer, it outputs initial latency count to indicate pending refresh; during reads, it acts as a source-synchronous read data strobe edge-aligned with DQ; during writes, it functions as a per-word mask (HIGH = masked, LOW = written). This dual-role design eliminates need for separate strobe and mask lines.

Does S80KS2564GACHI043 require external refresh circuitry or host software intervention?

No. The device integrates autonomous refresh control logic that manages DRAM array refresh during idle cycles or configurable partial-array intervals. Host sees only a static RAM interface - no refresh commands, timers, or scheduling are required, simplifying firmware and reducing CPU load.

How does burst length configuration affect timing and power consumption?

Longer bursts (e.g., 128-word) improve sustained bandwidth but increase transaction duration, delaying internal refresh opportunities and raising average current (22 mA vs. 20 mA for linear burst). Shorter bursts reduce latency and allow more frequent refresh, lowering power in burst-limited applications like real-time control loops.

Can S80KS2564GACHI043 operate with a single-ended clock only, or is differential clock mandatory?

A single-ended clock (CK only) is fully supported and sufficient for most designs. Differential clock (CK/CK#) is optional and recommended only for high-noise environments or when board-level skew exceeds 50 ps - it improves timing margin but adds routing complexity and one extra ball.