Infineon Technologies S80KS2564GACHV040

Overview

S80KS2564GACHV040 from Infineon Technologies is a 256 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ Extended-IO x16 interface, 1.8 V supply, 200 MHz max clock rate, and 49-ball FBGA package rated for –40°C to +105°C. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in embedded graphics, display buffers, and real-time data logging.

For engineers reviewing the S80KS2564GACHV040 datasheet, S80KS2564GACHV040 pinout, S80KS2564GACHV040 application, or S80KS2564GACHV040 equivalent, key selection criteria include HYPERBUS™ DDR timing compliance, RWDS-based latency signaling, burst configuration flexibility (16–128-word wrapped/linear), hybrid sleep power mode, and industrial-plus temperature operation.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, presenting static RAM-like behavior to the controller. Its HYPERBUS™ Extended-IO interface uses a 16-bit bidirectional DQ bus with source-synchronous RWDS[1:0] for read strobe and write mask functions, supporting both single-ended (CK) and optional differential (CK/CK#) clocking.

The device implements configurable burst modes-linear or wrapped (16/32/64/128 words)-and supports hybrid bursts combining wrapped and linear segments. Power management includes Hybrid Sleep (partial array retention) and Deep Power Down (15 μA), with initial access latency dynamically signaled via RWDS during command/address transfer.

Key Specifications

Pinout & Package

49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, with 20 dedicated bus signals (including CS#, CK/CK#, RWDS[1:0], DQ[15:0], RESET#) and dual power domains (VCC for core, VCCQ for I/O).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020, S80KS2564GACHV040 delivers double density and adaptive latency for higher throughput; versus S80KS1284GACHV040, it doubles capacity without changing layout or firmware timing parameters - enabling scalable memory design across product tiers.

Availability

S80KS2564GACHV040 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and real-time data loggers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2564GACHV040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERRAM™ family - designed specifically to replace parallel NOR/NAND and SRAM in bandwidth-constrained embedded systems using the standardized HYPERBUS™ interface.

FAQ

What is the function of RWDS[1:0] in read versus write operations?

RWDS[1:0] serves three distinct roles: (1) During command/address transfer, it outputs initial latency count to signal pending refresh; (2) During reads, it acts as a source-synchronous read data strobe, edge-aligned with DQ; (3) During writes, it functions as a 16-bit write mask - HIGH prevents data update, LOW allows write. This dual-role eliminates need for separate strobe and mask lines.

Does S80KS2564GACHV040 require external refresh circuitry or host-controlled refresh cycles?

No. The device contains fully autonomous on-die refresh logic that manages DRAM array refresh during idle periods or gaps between transactions. The host sees only a static RAM interface - no refresh commands, timers, or scheduling are required. Refresh occurs transparently and does not interrupt active transactions.

Can this part operate with single-ended clock (CK only) instead of differential (CK/CK#)?

Yes. The device supports both configurations: single-ended CK input (20 bus signals) or differential CK/CK# (21 bus signals). When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidelines. No performance penalty is incurred - maximum 200 MHz operation is guaranteed in either mode.

How does burst length configuration affect system-level timing and DMA setup?

Burst length directly determines the number of DQ transfers per transaction and the address wrap behavior. Configured via Configuration Register 0, wrapped bursts (e.g., 64 words) auto-wrap within a page, optimizing cache line fills; linear bursts stream sequentially. DMA controllers must be programmed with matching burst count and alignment to avoid premature CS# deassertion or bus contention.