Infineon Technologies S80KS2564GACHV043

Overview

S80KS2564GACHV043 from Infineon Technologies is a 256 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ Extended-IO x16 interface, operating at 1.8 V nominal supply, supporting up to 200 MHz DDR clocking, delivering 800 MBps data throughput, and housed in a 49-ball FBGA package for industrial-plus temperature range (–40°C to +105°C). It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs requiring seamless pseudo-static behavior without host-managed refresh.

For engineers reviewing the S80KS2564GACHV043 datasheet, S80KS2564GACHV043 pinout, S80KS2564GACHV043 application, or S80KS2564GACHV043 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven latency handling, burst configuration flexibility (linear/wrapped/hybrid), partial array refresh support, and Deep Power Down current (15 μA).

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh during idle cycles, eliminating host intervention while maintaining apparent SRAM-like access semantics. Its HYPERBUS™ Extended-IO interface uses a 16-bit bidirectional DQ bus with source-synchronous RWDS[1:0] for read strobe and write mask, plus optional differential CK/CK# for noise immunity.

The device supports configurable burst lengths (16–128 words), hybrid burst mode (wrapped + linear), and four partial-array refresh options (1/8, 1/4, 1/2, full), enabling precise power-performance trade-offs. All I/Os are LV-CMOS compatible, with tACC ≤ 35 ns at 200 MHz and initial latency dynamically signaled via RWDS during command-address phase.

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0641DPBHV020, S80KS2564GACHV043 delivers 4× density and advanced burst/refreshtuning; versus S80KS1284GACHV043, it doubles capacity without changing footprint or thermal design - enabling scalable memory architecture with minimal redesign.

Availability

S80KS2564GACHV043 is available at Aetrix Electronics and suitable for automotive ADAS camera modules, industrial PLC HMIs, smart home gateways, and portable medical ultrasound systems requiring stable component supply, long-term lifecycle assurance, and industrial-plus temperature qualification.

Supply support for S80KS2564GACHV043 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

This device belongs to Infineon's HYPERRAM™ family - engineered specifically for MCU/SoC systems needing high-speed, low-pin-count external memory with SRAM-like simplicity and DRAM-level density.

FAQ

What is the function of RWDS[1:0] in read versus write operations?

RWDS[1:0] serves three distinct roles: during command-address transfer, it outputs initial latency count; during reads, it acts as an edge-aligned read data strobe; during writes, it functions as a per-word mask (HIGH = masked, LOW = written). This dual-purpose signaling eliminates need for separate strobe and mask lines, reducing interface complexity while preserving timing determinism.

Does S80KS2564GACHV043 require external refresh control from the host processor?

No. The device contains fully autonomous on-die refresh logic that manages full or partial array refresh during idle cycles. Host only needs to observe initial latency indications via RWDS and limit burst duration per datasheet guidelines - no software refresh commands or timing-critical refresh intervals are required.

Can this PSRAM be used with a microcontroller lacking native HYPERBUS™ controller hardware?

Yes, but with significant firmware overhead. Bit-banged GPIO emulation of HYPERBUS™ is possible for low-frequency initialization or register access, but sustained 200 MHz DDR operation requires dedicated hardware controller (e.g., STM32H7/H5 OCTOSPI, NXP i.MX RT HyperBus interface) due to strict setup/hold and skew requirements on DQ, RWDS, and CK.

How does Deep Power Down mode affect data retention and wake-up time?

In Deep Power Down, VCC/VCCQ must remain ≥ 1.7 V; data is retained indefinitely as long as supply is maintained. Wake-up latency is ≤ 100 μs after CS# assertion and clock stabilization - significantly faster than LPDDR2/3 wake-up and compatible with real-time interrupt response requirements in edge AI inference pipelines.