Infineon Technologies S80KS5122GABHA020

Overview

S80KS5122GABHA020 from Infineon is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where refresh-free operation simplifies host firmware.

For engineers reviewing the S80KS5122GABHA020 datasheet, S80KS5122GABHA020 pinout, S80KS5122GABHA020 application, or S80KS5122GABHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe behavior, burst length configurability (16–128 bytes), partial array refresh support, and AEC-Q100 Grade 2 qualification for +105 °C operation.

Technical Context

The device implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic that eliminates host-managed refresh cycles. Its HYPERBUS™ interface uses single-ended or optional differential CK/CK# and bidirectional RWDS to coordinate DDR-aligned 8-bit DQ transfers with center-aligned command/address and edge-aligned read data.

It supports linear and wrapped burst modes (16/32/64/128-byte), hybrid burst (one wrapped + linear), configurable drive strength, and four power states: interface standby, active clock stop, hybrid sleep, and deep power down (30 µA at 105 °C). Refresh is managed autonomously across partial (1/8, 1/4, 1/2) or full array segments.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-279AC mechanical outline. Pin functions are defined per Infineon datasheet Rev. *C (pp. 9–10, 48–49).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed PSRAM applications.

Compared with S27KL0642DPBHB020 and S80KS2562GABHA020, the S80KS5122GABHA020 uniquely balances 512 Mb capacity, 400 MBps throughput, and automotive-grade reliability in a 24-ball footprint-enabling next-generation displays and edge AI without increasing board area or signal count.

Availability

S80KS5122GABHA020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI inference accelerators, and medical imaging preview systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5122GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for MCU- and SoC-based systems where traditional parallel interfaces are too bulky or power-hungry.

FAQ

Does S80KS5122GABHA020 require external refresh control from the host MCU?

No. The device integrates autonomous self-refresh logic that manages DRAM refresh cycles internally without host intervention. The host sees it as a pseudo-static RAM (PSRAM), eliminating the need for refresh timers, dedicated refresh commands, or complex driver software - simplifying integration and reducing CPU overhead.

What is the function of the RWDS signal during write operations?

During writes, RWDS operates as a byte-level write mask: when HIGH, the corresponding DQ[7:0] byte is masked and not written to memory; when LOW, the byte is valid and stored. This enables precise byte-aligned writes and merging of non-word-aligned data within a single burst - critical for efficient register-mapped peripheral updates or fragmented buffer writes.

Can S80KS5122GABHA020 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and optional differential (CK/CK#) clocking. Single-ended mode uses 11 bus signals (CS#, CK, RWDS, DQ[7:0], RESET#); differential mode adds CK# for improved noise immunity, using 12 signals. Configuration is fixed by internal strapping and cannot be changed dynamically.

Is the 24-ball FBGA package lead-free and RoHS compliant?

Yes. The S80KS5122GABHA020 uses a lead-free, RoHS-compliant 24-ball FBGA package with matte tin surface finish, meeting JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and qualified for reflow soldering per IPC/JEDEC J-STD-020D.1 standards.