Infineon Technologies S80KS5122GABHA023

Overview

S80KS5122GABHA023 from Infineon is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting up to 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs.

For engineers reviewing the S80KS5122GABHA023 datasheet, S80KS5122GABHA023 pinout, S80KS5122GABHA023 application, or S80KS5122GABHA023 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS-synchronized read/write strobe behavior, partial array refresh configuration, and AEC-Q100 Grade 2 (–40 °C to +105 °C) qualification for automotive use.

Technical Context

The device implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-managed refresh cycles. It uses LV-CMOS I/O with center-aligned command/address and edge-aligned read data via RWDS, requiring strict initial access latency handling per transaction.

HYPERBUS™ operates with 11–12 signal lines (including optional CK#), 8-bit DQ bus, and bidirectional RWDS that functions as both refresh latency indicator and source-synchronous read strobe/write mask - enabling deterministic timing without external clock forwarding or complex PHY layer support.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-270AC mechanical outline. Pin assignments conform to HYPERBUS™ v2.0 specification for 8-bit DQ, single/differential clock, CS#, RESET#, and bidirectional RWDS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with S27KL0641DPBHI020, S80KS5122GABHA023 delivers 5× higher bandwidth and true random-access data buffering; versus S80KS2562GABHA020, it doubles capacity and maintains identical timing and thermal behavior - making it optimal for next-gen automotive displays and industrial edge nodes demanding >300 MBps sustained throughput.

Availability

S80KS5122GABHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS domain controllers, and medical edge imaging systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS5122GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

This part belongs to the HYPERRAM™ product line, designed specifically to replace parallel PSRAM and NOR flash in bandwidth-constrained, pin-limited embedded systems - prioritizing simplicity, deterministic timing, and automotive-grade reliability.

FAQ

Does S80KS5122GABHA023 require external refresh circuitry or host-controlled refresh commands?

No. The device contains on-die self-refresh logic that automatically manages DRAM array refresh during idle periods. The host only needs to observe initial access latency signaled via RWDS and avoid exceeding maximum burst duration - no refresh registers, timers, or periodic commands are required.

What is the function of the RWDS signal during write transactions?

During writes, RWDS acts as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is ignored and not written to memory; when LOW, the byte is valid and stored. This enables precise byte-level merging of non-aligned writes within a single burst, supporting efficient DMA and cache-line updates.

Can S80KS5122GABHA023 operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported and commonly used. Differential clock (CK/CK#) is optional and improves noise immunity in electrically noisy environments like automotive powertrain domains - no functional difference in timing or protocol behavior between the two modes.

Is the 24-ball FBGA package lead-free and RoHS compliant?

Yes. S80KS5122GABHA023 uses a lead-free, halogen-free, RoHS-compliant 24-ball FBGA package (JEDEC MO-270AC), qualified for reflow soldering per IPC/JEDEC J-STD-020D.1, with MSL Level 3 rating and 260 °C peak reflow tolerance.