Infineon Technologies S80KS5122GABHB020

Overview

S80KS5122GABHB020 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe/mask, and 24-ball FBGA packaging for space-constrained embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S80KS5122GABHB020 datasheet, S80KS5122GABHB020 pinout, S80KS5122GABHB020 application, or S80KS5122GABHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance, partial array refresh configuration, linear/wrapped burst support, and industrial temperature operation (–40 °C to +85 °C).

Technical Context

The S80KS5122GABHB020 implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses command/address/data multiplexing over DQ[7:0], with CK/CK# supporting both single-ended and differential clock modes.

Read/write transactions begin with CS# assertion and six-byte CA transfer, followed by configurable initial latency (1× or 2× count), then DDR data transfers aligned to RWDS edge (read) or center-aligned to CK (write). RWDS serves as dynamic latency indicator, read strobe, and write mask signal - all within a 12-signal bus footprint.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, designed for automated PCB assembly and thermal performance in dense SoC memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pseudo-SRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, the S80KS5122GABHB020 uniquely balances 512 Mb density, 400 MBps DDR bandwidth, and HYPERBUS™'s 11-signal simplicity - making it optimal for modern MCU-based systems needing scalable, low-pin-count memory expansion.

Availability

S80KS5122GABHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI inference caches, and smart home gateway firmware overlays requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS5122GABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The HYPERRAM™ product line targets memory-constrained microcontroller applications requiring high bandwidth and low pin count, bridging the gap between serial flash and parallel SRAM in cost- and space-sensitive embedded systems.

FAQ

What is the minimum supported clock frequency for S80KS5122GABHB020?

The device does not specify a minimum clock frequency; it supports DC to 200 MHz operation. System clocks below 10 MHz are valid, and the device remains functional in hybrid sleep mode with clock stopped. Timing parameters scale linearly with clock period, and tACC remains fixed at ≤35 ns regardless of frequency.

Does S80KS5122GABHB020 require external termination resistors on the HYPERBUS™ interface?

Yes - 50 Ω series termination is required on CK, CK#, and DQ[7:0] lines when using differential CK/CK#, and on DQ and RWDS for single-ended operation. The datasheet specifies 50 Ω ±10% source-series termination near the driver, with no parallel termination at the receiver. RWDS requires matched impedance due to its bidirectional role.

How is the 512 Mb capacity physically organized across the two dies?

The device contains two independent 256 Mb dies in a single package. Address bits A26–A27 select the die, with A25–A0 addressing rows/columns within each die. Linear bursts do not cross die boundaries; hybrid bursts allow one wrapped burst on Die 0 followed by linear burst on Die 1, but not vice versa.

Can S80KS5122GABHB020 operate with only VCC powered, leaving VCCQ unconnected?

No - both VCC (1.8 V ±0.15 V, core array) and VCCQ (1.8 V ±0.15 V, I/O buffers) must be simultaneously powered and ramped within 100 ms of each other. Power sequencing violations cause undefined behavior, failed initialization, or permanent latch-up per Absolute Maximum Ratings section (Table 9.1).