Infineon Technologies S80KS5122GABHB023

Overview

S80KS5122GABHB023 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo Static RAM) with HYPERBUS™ interface, operating at 1.8 V, supporting up to 200 MHz DDR clock rate and delivering 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe/mask, configurable burst lengths (16–128 bytes), and industrial-plus temperature range (–40 °C to +105 °C).

For engineers reviewing the S80KS5122GABHB023 datasheet, S80KS5122GABHB023 pinout, S80KS5122GABHB023 application, or S80KS5122GABHB023 equivalent, key selection considerations include HYPERBUS™ timing compliance, RWDS-driven read/write synchronization, partial array refresh configuration, and FBGA-24 package integration in space-constrained embedded memory subsystems.

Technical Context

The device implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-managed refresh cycles. It uses LV-CMOS signaling for all I/Os and supports both single-ended (CK) and optional differential (CK/CK#) clocking with 12-signal bus configuration.

HYPERBUS™ transactions begin with 6-byte command/address transfer over DQ[7:0], followed by initial access latency indicated via RWDS level, then DDR-aligned read/write data transfers. RWDS serves as read data strobe (edge-aligned), write mask (high = masked), and refresh-latency indicator during CA phase.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for automated SMT assembly in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pseudo-SRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, S80KS5122GABHB023 delivers 60× more density than FRAM and 2× higher bandwidth than async SRAM, while reducing pin count by >50% and enabling deep power-down for intermittent sensing workloads.

Availability

S80KS5122GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI gateways, edge AI sensor hubs, and medical ultrasound front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5122GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S80KS5122GABHB023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and PSRAM in embedded systems where high bandwidth, low pin count, and simplified memory controller integration are critical.

FAQ

Does S80KS5122GABHB023 require external refresh circuitry?

No. The device contains on-die self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host systems interact with it as a pseudo-static memory - no refresh commands, timers, or scheduling are needed in firmware or hardware design.

What is the function of the RWDS signal during write operations?

During writes, RWDS acts as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is ignored and not written to memory; when LOW, the byte is valid and stored. This enables precise byte-level merging of misaligned data without host-side padding or multiple small writes.

Can S80KS5122GABHB023 operate with single-ended clock only?

Yes. The device supports single-ended CK input by default. CK# is optional and used only when differential clocking is implemented for improved noise immunity. No configuration register setting is required to disable CK# - leaving it unconnected or tied to VSS is electrically valid per datasheet Section 11.1.

Is the 24-ball FBGA package compatible with standard reflow profiles?

Yes. The S80KS5122GABHB023 uses a JEDEC-standard 24-ball FBGA (5 × 5 mm, 0.8 mm pitch) with SnAgCu (SAC305) solder finish. It complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C for ≤60 seconds.