Infineon Technologies S80KS5122GABHI020

Overview

S80KS5122GABHI020 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clocking and delivering up to 400 MBps throughput. It integrates dual 256 Mb dies in a single 24-ball FBGA package and features configurable burst lengths (16–128 bytes), partial array refresh, and hybrid sleep/deep power-down modes for embedded microcontroller offload memory in automotive instrument clusters.

For engineers reviewing the S80KS5122GABHI020 datasheet, S80KS5122GABHI020 pinout, S80KS5122GABHI020 application, or S80KS5122GABHI020 equivalent, key selection considerations include HYPERBUS™ timing compliance (tACC ≤ 35 ns), RWDS-driven read/write strobe/mask behavior, 1.8 V dual-supply (VCC/VCCQ) operation, and AEC-Q100 Grade 2 temperature support (–40 °C to +105 °C).

Technical Context

The S80KS5122GABHI020 implements a dual-die HYPERBUS™ architecture with two independent 256 Mb HYPERRAM™ arrays sharing a common 8-bit DQ bus, CS#, CK/CK#, and RWDS. Its internal refresh controller autonomously manages partial (1/8, 1/4, 1/2) and full array refresh without host intervention, enabling PSRAM-like simplicity.

Command/address and data are multiplexed over DQ[7:0] using a 6-byte CA sequence followed by DDR-aligned data transfers. RWDS serves as both initial latency indicator during CA phase and edge-aligned read strobe / center-aligned write mask signal - a core timing dependency for deterministic access in real-time MCU systems.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch), RoHS-compliant, with ball map defined per Infineon datasheet 002-31338 Rev. *C Section 11.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth, low-pin-count external memory applications.

Compared with CY15B104QN-BHXC and IS66WV51216EDLL-15BLI, the S80KS5122GABHI020 uniquely balances 512 Mb density, HYPERBUS™'s 12-signal efficiency, and automotive-grade self-refresh - making it optimal for next-gen MCU-based displays and sensor hubs where pin count, power, and throughput are co-constrained.

Availability

S80KS5122GABHI020 is available at Aetrix Electronics and suitable for automotive digital instrument clusters, ADAS domain controllers, industrial HMIs with local video playback, and smart gateway firmware update caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5122GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-density, low-pin-count external memory - specifically designed to replace parallel NOR/PSRAM while minimizing PCB layer count and EMI in safety-critical automotive and industrial applications.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS serves three distinct roles: during CA transfer, it signals whether additional initial latency is needed; during reads, it acts as an edge-aligned source-synchronous read data strobe; during writes, it functions as a byte mask (HIGH = masked, LOW = written). This dual-mode behavior is fundamental to HYPERBUS™ timing compliance and cannot be omitted or repurposed.

Does the S80KS5122GABHI020 require external refresh circuitry?

No. The device contains fully autonomous internal refresh logic that manages both partial and full array refresh cycles without host intervention. The host only needs to observe maximum burst length restrictions and initial latency indications via RWDS - eliminating refresh-related firmware complexity and timing margins.

Can this part operate with a single-ended clock instead of differential CK/CK#?

Yes. The S80KS5122GABHI020 supports both differential (CK/CK#) and single-ended (CK only) clock configurations. When using single-ended mode, CK# must be tied to VSS per datasheet Section 3.1, and timing margins tighten slightly - tACC increases to 40 ns, requiring host controller validation.

How does the dual-die architecture affect addressing and burst continuity?

The two 256 Mb dies are mapped contiguously in linear address space but do not support linear burst crossing die boundaries. Wrapped bursts are confined within each die; attempting a 256-byte linear burst spanning both dies results in undefined behavior. Host software must align large transfers to die boundaries or use hybrid burst mode.