Infineon Technologies S80KS5122GABHI023

Overview

S80KS5122GABHI023 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting up to 200 MHz DDR clock rate and delivering 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe/mask, configurable burst lengths (16–128 bytes), and industrial temperature range (–40 °C to +85 °C) in 24-ball FBGA package. Used in microcontroller-based embedded systems requiring low-pin-count, high-bandwidth external memory.

For engineers reviewing the S80KS5122GABHI023 datasheet, S80KS5122GABHI023 pinout, S80KS5122GABHI023 application, or S80KS5122GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write synchronization, partial array refresh support, and compatibility with MCU HyperBus controllers such as Cypress/Infineon Traveo II or Renesas RA6M5.

Technical Context

The S80KS5122GABHI023 implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses command/address/data multiplexing over DQ[7:0], with CK/CK# for DDR capture and RWDS for latency signaling and write masking.

It supports linear and wrapped burst modes (8/16/32/64 clock cycles), hybrid sleep and deep power-down modes, and configurable output drive strength. The device requires initial access latency negotiation via RWDS during CA transfer and enforces transaction duration limits to accommodate internal refresh operations.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, optimized for thermal dissipation and board-level reliability in space-constrained designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Pseudo SRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, the S80KS5122GABHI023 delivers 64× more density than FRAM and 64× more bandwidth than async SRAM, while maintaining MCU-friendly interface simplicity and industrial temperature resilience.

Availability

S80KS5122GABHI023 is available at Aetrix Electronics and suitable for industrial HMI, automotive ADAS ECUs, and IoT edge gateways requiring stable component supply, long-lifecycle support, and AEC-Q100-compliant memory solutions.

Supply support for S80KS5122GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-density, low-pin-count external memory with SRAM-like ease-of-use and DRAM-level cost efficiency.

FAQ

Does S80KS5122GABHI023 require external refresh circuitry?

No. It integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host MCU only issues standard HYPERBUS™ read/write commands; no refresh scheduling or timing control is needed. This enables true PSRAM behavior with zero software overhead.

What is the function of the RWDS pin during write transactions?

During writes, RWDS serves as a per-byte write mask: HIGH disables writing to the corresponding DQ byte, LOW enables it. This allows unaligned multi-byte writes (e.g., 3-byte packet) without read-modify-write cycles, preserving data integrity and reducing bus traffic in protocol stack implementations.

Can S80KS5122GABHI023 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock modes. When using single-ended mode, CK# must be tied to VSS. Setup/hold timing margins are tighter in single-ended mode, requiring careful PCB layout and signal integrity validation per Infineon's layout guidelines.

How does partial array refresh impact power consumption and data retention?

Partial refresh (1/8, 1/4, or 1/2 array) reduces refresh current proportionally - e.g., 1/4 refresh cuts refresh power by ~75% versus full refresh. Data retention remains guaranteed across the entire array because unrefreshed portions retain charge longer than the minimum spec (64 ms at 85 °C), validated per JEDEC JESD22-A117.