Infineon Technologies S80KS5122GABHM020

Overview

S80KS5122GABHM020 from Infineon is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where refresh-free operation simplifies host firmware.

For engineers reviewing the S80KS5122GABHM020 datasheet, S80KS5122GABHM020 pinout, S80KS5122GABHM020 application, or S80KS5122GABHM020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-based read/write strobe/mask behavior, burst length configurability (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 2 qualification (–40 °C to +105 °C).

Technical Context

The device implements a dual-die 512 Mb architecture (two 256 Mb HYPERRAM™ dies), with internal self-refresh logic eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses 8-bit DQ lines with source-synchronous RWDS for read strobing and write masking, and supports both single-ended (11-signal) and differential clock (12-signal) configurations.

Command/address and data share the same DQ[7:0] bus in time-multiplexed fashion; all transactions begin with CS# assertion and six-byte CA transfer. Initial access latency is dynamically indicated via RWDS during CA phase, and linear burst across die boundaries is explicitly unsupported per datasheet Section 2.1.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with ball map defined per Infineon datasheet Section 11.2. Package supports automated optical inspection and fine-pitch reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with CY15B104QN-PSOC and IS45S32800J-75BLI, the S80KS5122GABHM020 uniquely balances 512 Mb density, 400 MBps bandwidth, HYPERBUS™'s 12-pin simplicity, and autonomous refresh-making it optimal for new automotive and industrial designs targeting cost, size, and firmware efficiency.

Availability

S80KS5122GABHM020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS preprocessing units, and medical patient monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5122GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and automotive qualification expertise.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained embedded systems-designed specifically to replace parallel NOR/NAND and legacy PSRAM in automotive and industrial applications.

FAQ

Does S80KS5122GABHM020 require external refresh control from the host MCU?

No. The device contains fully autonomous self-refresh logic that manages DRAM array refresh internally. Host firmware interacts with it as a pseudo-static memory-no refresh commands, timers, or scheduling are required. This is confirmed in Section 1 General Description of the Infineon datasheet (Rev. *C, p.5), which states the host "is not required to manage any refresh operations."

What is the function of the RWDS pin during write transactions?

During write transactions, RWDS acts as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is masked (not written); when LOW, the byte is valid and written. This enables precise byte alignment and merging of non-word-aligned writes within a single burst, as specified in Figure 3 and Section 1.1 (p.6) of the datasheet.

Can S80KS5122GABHM020 operate with a single-ended clock only?

Yes. The device supports both single-ended (CK only, 11-signal interface) and differential (CK/CK#, 12-signal interface) clock configurations. Single-ended mode is sufficient for most industrial applications; differential mode is recommended for automotive environments with higher EMI, per Section 3.1 (p.9) signal summary and timing diagrams.

Is linear burst supported across both 256 Mb dies in the 512 Mb device?

No. Linear burst across die boundaries is explicitly unsupported, as stated in the Features section (p.2): "Linear Burst across die boundary is not supported." Bursts are confined within a single die; crossing die boundaries requires separate CS# assertions and CA addressing.