Infineon Technologies S80KS5122GABHM023

Overview

S80KS5122GABHM023 from Infineon is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clocking and delivering up to 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe/mask, and 24-ball FBGA packaging for industrial temperature range (–40 °C to +85 °C). Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory with transparent refresh.

For engineers reviewing the S80KS5122GABHM023 datasheet, S80KS5122GABHM023 pinout, S80KS5122GABHM023 application, or S80KS5122GABHM023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write synchronization, burst length configurability (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 3 qualification for automotive control units.

Technical Context

The S80KS5122GABHM023 implements a dual-die 256 Mb × 2 architecture with on-die self-refresh logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses center-aligned command/address transfers over DQ[7:0] and edge-aligned RWDS-synchronized data transfers during reads and mask-controlled writes.

It supports linear and wrapped burst modes (16/32/64/128-byte), configurable output drive strength, and partial array refresh (1/8, 1/4, 1/2). The device enters hybrid sleep mode with retention or deep power down (<30 µA at 105 °C), triggered via dedicated command sequences and RESET# assertion.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and JEDEC MO-270 compliant mechanical outline. Pin functions validated per Infineon datasheet 002-31338 Rev. *C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static RAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, the S80KS5122GABHM023 uniquely balances high density (512 Mb), HYPERBUS™'s low-pin DDR bandwidth, and intelligent power management - making it optimal for memory-constrained, performance-sensitive embedded systems where SRAM cost scales prohibitively and NOR/NAND lack random-access speed.

Availability

S80KS5122GABHM023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, edge AI accelerators, and smart gateway firmware caching requiring stable component supply and long-term lifecycle support.

Supply support for S80KS5122GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained MCUs and SoCs - designed specifically to replace parallel SRAM/NOR in cost- and space-sensitive embedded applications.

FAQ

What is the function of the RWDS pin in S80KS5122GABHM023?

RWDS is a bidirectional signal serving three roles: (1) indicating initial access latency during command/address transfer, (2) acting as a source-synchronous read data strobe (edge-aligned with DQ), and (3) functioning as a write byte mask (HIGH = masked, LOW = valid). It eliminates need for separate RD/WR control lines and enables precise timing alignment without additional clock domains.

Does S80KS5122GABHM023 require external refresh circuitry?

No. The device integrates self-refresh logic that automatically manages DRAM array refresh during idle periods. Host processors interact with it as if it were static RAM - no refresh commands, timers, or scheduling are required. Refresh occurs transparently between transactions, provided burst lengths allow sufficient idle time per datasheet timing constraints.

Can S80KS5122GABHM023 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance. Differential mode improves noise immunity and timing margin at 200 MHz, but single-ended operation is fully functional and validated for industrial temperature range.

What is the minimum supported burst length for read/write operations?

The shortest supported wrapped burst is 16 bytes (8 clock cycles). Linear burst mode supports arbitrary lengths aligned to 16-byte boundaries. Burst length is configured via Configuration Register 0 (CR0[11:8]), and the host must issue appropriate command sequences before each transaction to set the desired mode and length.