Infineon Technologies S80KS5122GABHV020

Overview

S80KS5122GABHV020 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where refresh-free host operation and thermal robustness up to +105 °C are required.

For engineers reviewing the S80KS5122GABHV020 datasheet, S80KS5122GABHV020 pinout, S80KS5122GABHV020 application, or S80KS5122GABHV020 equivalent, this device delivers deterministic latency via RWDS-synchronized read strobe, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 2 qualification for under-hood automotive use.

Technical Context

The S80KS5122GABHV020 implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses an 8-bit bidirectional DQ bus with source-synchronous RWDS for read strobe and write mask, plus optional differential CK/CK# for noise immunity.

It supports linear and wrapped burst modes (8/16/32/64 clocks), configurable output drive strength, and partial array refresh (1/8–full). The device enters hybrid sleep mode with 3.1 mA standby current at 105 °C and deep power down with 30 µA, both recoverable via hardware reset or CS#-initiated wake-up.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated reflow assembly and thermal dissipation up to 105 °C ambient.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, the S80KS5122GABHV020 uniquely balances 512 Mb density, 400 MBps bandwidth, 24-pin simplicity, self-refresh autonomy, and AEC-Q100 Grade 2 qualification - making it optimal for next-gen automotive and industrial memory-constrained systems requiring scalable external RAM.

Availability

S80KS5122GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS sensor fusion modules, and smart gateway controllers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS5122GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

The HYPERRAM™ product line targets embedded systems needing high-speed, low-pin-count external memory with simplified interface and autonomous refresh - specifically addressing bandwidth bottlenecks in MCU-based automotive and industrial applications.

FAQ

What is the minimum initial access latency for read transactions on the S80KS5122GABHV020?

The device uses a fixed 2× latency count for all read transactions due to its dual-die architecture; the datasheet explicitly states that the "Low = 1x Latency Count" option is not applicable. This ensures predictable timing behavior across die boundaries and eliminates latency variation during cross-die accesses.

How does RWDS function during write masking, and what is the electrical behavior?

During write transactions, RWDS acts as an input: when HIGH, the corresponding DQ[7:0] byte is masked and not written to memory; when LOW, the byte is valid and written. This is implemented as synchronous sampling on the rising edge of CK, enabling precise byte-level merging of non-aligned writes without additional address decoding logic.

Can the S80KS5122GABHV020 operate with single-ended CK only, and what is the impact on timing margin?

Yes - the device fully supports single-ended CK operation per HYPERBUS™ specification. Using differential CK/CK# improves jitter tolerance and reduces timing skew, especially above 150 MHz in noisy environments, but single-ended mode maintains full 200 MHz functionality with proper PCB layout (controlled impedance, length matching, and ground shielding).

Is partial array refresh supported, and how is it configured?

Yes - partial refresh (1/8, 1/4, 1/2, or full array) is controlled via Configuration Register 0 (bits [11:10]). This allows dynamic power optimization: for example, in idle HMI states where only UI metadata is active, 1/8 refresh reduces current by ~85% versus full refresh while retaining displayed content integrity.