Infineon Technologies S80KS5122GABHV023

Overview

S80KS5122GABHV023 from Infineon Technologies is a 512 Mb self-refresh DRAM (Pseudo SRAM) with HYPERBUS™ interface, operating at 1.8 V, supporting 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where deterministic latency and refresh transparency are required.

For engineers reviewing the S80KS5122GABHV023 datasheet, S80KS5122GABHV023 pinout, S80KS5122GABHV023 application, or S80KS5122GABHV023 equivalent, this device delivers pseudo-static behavior with configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 2 qualification (–40 °C to +105 °C), enabling direct replacement of legacy PSRAMs without host-side refresh management.

Technical Context

The S80KS5122GABHV023 implements a dual-die 256 Mb × 2 architecture with on-die self-refresh control logic, eliminating host-initiated refresh commands. Its HYPERBUS™ interface uses an 8-bit bidirectional DQ bus with RWDS as a source-synchronous read strobe and write mask signal.

It supports linear and wrapped burst modes (8/16/32/64 clocks), configurable output drive strength, and initial access latency indication via RWDS during command-address transfer. The device uses single-ended or optional differential CK/CK# and operates across industrial and automotive temperature grades with separate VCC (array) and VCCQ (I/O) supplies.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-270AC mechanical outline. Pin functions validated per Infineon datasheet 002-31338 Rev. *C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static DRAM applications.

Compared with S27KL0641DPBHI020, the S80KS5122GABHV023 provides 8× higher density and automotive-grade reliability; versus S80KS2562GABHV023, it doubles memory capacity within identical thermal and layout constraints - making it optimal for next-gen ADAS and digital cockpit platforms requiring >256 MB external RAM.

Availability

S80KS5122GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI display buffers, ADAS camera preprocessing buffers, and smart gateway message queues requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5122GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-speed, low-pin-count external memory for resource-constrained embedded systems, specifically addressing the need for PSRAM-like simplicity with DRAM-level density and bandwidth in automotive and industrial applications.

FAQ

Does S80KS5122GABHV023 require external refresh circuitry or host software intervention?

No. The device integrates on-die self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host systems interact with it as a pseudo-static RAM - no refresh commands, timers, or scheduling are needed. This is confirmed in Section 1 General Description of Infineon datasheet 002-31338 Rev. *C, which states the memory "appears to the host as though the memory uses static cells that retain data without refresh."

What is the function of the RWDS pin during write transactions?

During write transactions, RWDS serves as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is masked and not written to memory; when LOW, the byte is valid and stored. This enables precise byte-aligned writes and merging of partial-word updates within a single burst, as defined in Figure 3 and Section 4.3 of the datasheet.

Can S80KS5122GABHV023 operate with single-ended clock only, or is differential CK/CK# mandatory?

Single-ended clock (CK only) is fully supported and requires no CK# connection. The datasheet explicitly lists "Optional differential clock (CK, CK#)" under Features and confirms single-ended operation in Section 11.1 and timing tables. CK# is used only to improve noise immunity in high-EMI environments like automotive powertrain zones.

How does the 24-ball FBGA package impact PCB layout compared to legacy parallel PSRAM packages?

The 24-ball FBGA reduces signal count by ~60% versus 48-pin TSOP PSRAMs - eliminating dedicated address lines and simplifying layer stackup. Its 5 mm × 5 mm footprint with 0.8 mm pitch allows placement in tight spaces near SoCs, and the absence of gull-wing leads improves solder joint reliability in thermal cycling environments per AEC-Q200.