Infineon Technologies S80KS5123GABHA020

Overview

S80KS5123GABHA020 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI DDR interface, 1.8 V supply, 200 MHz max clock rate, and 24-ball FBGA package. It functions as pseudo-static RAM in embedded systems requiring high-bandwidth, low-pin-count memory expansion-e.g., MCU-based edge AI accelerators where burst reads at up to 400 MBps offload frame buffers without refresh management overhead.

For engineers reviewing the S80KS5123GABHA020 datasheet, S80KS5123GABHA020 pinout, S80KS5123GABHA020 application, or S80KS5123GABHA020 equivalent, key selection criteria include xSPI command latency handling, RWDS-driven refresh signaling, configurable burst lengths (16–128 bytes), hybrid sleep mode current (3.1 mA @105°C), and AEC-Q100 Grade 2 qualification for automotive infotainment head units.

Technical Context

This device implements a dual-die 512 Mb architecture (2 × 256 Mb), each die operating independently under shared xSPI control. Its self-refresh logic autonomously schedules partial (1/8–1/2) or full array refreshes during idle cycles, eliminating host refresh intervention while enforcing transaction duration limits to guarantee internal timing margins.

The octal xSPI interface uses DDR signaling on DQ[7:0] and RWDS, with CK/CK# supporting optional differential clocking. All commands are 16-bit (dual 8-bit opcodes), MSb-first, and require continuous CK toggling during read/write latency periods-where RWDS asserts HIGH to signal tRFH refresh hold-off.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball-out optimized for signal integrity: power/ground distribution across corners and center, DQ/RWDS grouped for controlled impedance routing, and dedicated RESET# for deterministic initialization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S70KL5122A, S80KS5123GABHA020 offers automotive-grade reliability and unified 1.8 V supply simplifying power design; versus W9825G6JH-6I, it eliminates 26+ extra pins and refresh firmware overhead-reducing BOM cost and validation effort.

Availability

S80KS5123GABHA020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI display controllers, edge AI vision modules, and medical patient monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5123GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including IATF 16949.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained MCUs and SoCs-designed to replace parallel PSRAM and SRAM in automotive, industrial, and IoT edge applications.

FAQ

What is the minimum required xSPI command latency before read data becomes valid?

The minimum latency is programmable via configuration registers and depends on burst length and refresh state. At 200 MHz, typical tACC is 35 ns, but RWDS-driven tRFH insertion adds variable delay-designers must monitor RWDS during command/address phase and insert wait states accordingly. No fixed minimum applies; latency is dynamic and host-managed per transaction.

Does S80KS5123GABHA020 support true hardware reset recovery without power cycle?

Yes. Asserting RESET# for ≥100 ns forces the device into initialization state, clearing internal registers and resetting xSPI protocol logic. After RESET# release, the device enters standby mode and accepts READ ID or other commands within 100 μs-no VCC ramp required. This enables robust recovery from communication errors in field-deployed systems.

Can wrapped burst mode cross the 256 Mb die boundary between Die 0 and Die 1?

No. Wrapped burst is confined within a single 256 Mb die. Linear burst across die boundaries is explicitly unsupported per datasheet Section 4.12. Host software must manage address mapping to avoid crossing die boundaries during wrapped bursts-typically by aligning base addresses to 256 Mb boundaries or limiting burst size to ≤128 bytes within one die's address space.

How does hybrid sleep mode differ from deep power down in terms of wake-up time and data retention?

Hybrid sleep retains full memory contents with 3.1 mA current draw and wakes in <1 μs upon CS# assertion. Deep power down reduces current to 30 μA but requires ~100 μs wake-up time and full xSPI reinitialization (including READ ID and register restore). Use hybrid sleep for frequent low-latency wake-ups; use deep power down only for extended idle periods where microseconds matter less than microamps.