Infineon Technologies S80KS5123GABHA023

Overview

S80KS5123GABHA023 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers up to 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, supports configurable burst lengths (16–128 bytes), and integrates on-die refresh control for pseudo-static operation in embedded microcontroller systems requiring high-bandwidth external memory.

For engineers reviewing the S80KS5123GABHA023 datasheet, S80KS5123GABHA023 pinout, S80KS5123GABHA023 application, or S80KS5123GABHA023 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, hybrid sleep/deep power-down current specs (3.1 mA / 30 µA at 105 °C), and FBGA-24 package thermal compliance for industrial and automotive AEC-Q100 Grade 2 environments.

Technical Context

This device implements a dual-die 512 Mb architecture (2 × 256 Mb), where each die operates independently under shared xSPI protocol control. The memory uses 25-nm DRAM technology with integrated refresh logic that autonomously schedules partial (1/8, 1/4, 1/2) or full array refreshes without host intervention.

All transactions begin with CS# assertion and use 16-bit commands (dual 8-bit opcodes sent on both CK edges). RWDS serves a dual role: outputting refresh latency indication during command/address phase and acting as read data strobe or write mask during data phase - requiring precise host timing coordination per tRFH and tACC (35 ns max).

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, optimized for thermal dissipation in industrial and automotive PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed PSRAM applications.

Compared with S27KL0641DPBHI020 and MT46H32M32LFBF-6 IT:B, the S80KS5123GABHA023 uniquely balances octal xSPI simplicity, 400 MBps throughput, and self-refresh autonomy - making it optimal for MCU-based designs needing scalable external memory without DDR complexity or bandwidth compromise.

Availability

S80KS5123GABHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, and edge AI sensor nodes requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS5123GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-bandwidth, low-pin-count external memory - bridging the gap between serial flash and parallel DRAM with self-refresh simplicity.

FAQ

What is the function of the RWDS pin during a read transaction?

RWDS acts as a read data strobe during the data phase of a read transaction, aligning with the center of valid DQ data windows to ensure reliable sampling. During the command/address phase, it outputs HIGH to indicate required refresh latency (tRFH), which the host must honor before data transfer begins.

Does S80KS5123GABHA023 require external refresh commands from the host MCU?

No. The device contains autonomous refresh logic that schedules partial or full array refreshes internally. The host only needs to observe tRFH latency signaled via RWDS and avoid exceeding maximum burst duration limits - no refresh commands or timing management are required.

Can this part operate with single-ended clock (CK only) instead of differential (CK/CK#)?

Yes. The device supports both modes: single-ended CK operation (11-signal bus) and differential CK/CK# (12-signal bus). Differential mode improves noise immunity in electrically noisy automotive or industrial environments, while single-ended mode reduces routing complexity on space-constrained boards.

What is the minimum supported burst length, and how is it configured?

The minimum wrapped burst length is 16 bytes (8 clocks), selected via configuration register bits [7:4] in the device's mode register. Burst length is fixed per transaction and cannot be dynamically changed mid-burst; the host must issue a WRITE ANY REGISTER command to update it before initiating a new transaction.