Infineon Technologies S80KS5123GABHB020

Overview

S80KS5123GABHB020 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers up to 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz differential or single-ended clock, and integrates on-die refresh control to emulate PSRAM behavior in microcontroller-based embedded systems requiring low-pin-count high-bandwidth memory expansion.

For engineers reviewing the S80KS5123GABHB020 datasheet, S80KS5123GABHB020 pinout, S80KS5123GABHB020 application, or S80KS5123GABHB020 equivalent, key selection criteria include xSPI command compatibility, configurable burst length (16–128 bytes), hybrid sleep/deep power-down modes, RWDS-driven refresh latency signaling, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS domain controllers.

Technical Context

The S80KS5123GABHB020 implements a dual-die 256 Mb × 2 architecture with independent refresh management per die, enabling full-array or partial-array (1/8, 1/4, 1/2) self-refresh. Its xSPI interface uses 16-bit command opcodes (MSb-first), supports linear and wrapped burst modes, and requires continuous CK toggling during read/write latency periods.

RWDS serves a dual role: outputting refresh-hold indication (HIGH) during command/address phases and acting as read data strobe or write mask during data phases. The device enforces transaction-level timing constraints including tACC ≤ 35 ns and tRFH-dependent latency insertion, with no host-managed refresh scheduling required.

Key Specifications

Pinout & Package

24-ball FBGA package with 0.8 mm ball pitch, 5 mm × 5 mm footprint, and JEDEC-standard ball map optimized for signal integrity in high-speed xSPI routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth, low-pin-count DRAM applications.

Compared with S27KL0641DPBHI020 and MT46H32M32LFBF-6 IT:B, the S80KS5123GABHB020 uniquely balances 512 Mb capacity, xSPI pin efficiency, and autonomous refresh - making it optimal for MCU-based designs needing >300 MBps without DRAM controller overhead.

Availability

S80KS5123GABHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, ADAS camera preprocessing units, and edge AI inference accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5123GABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-speed, low-pin-count memory expansion - specifically addressing the gap between serial flash and parallel DRAM in cost- and space-constrained applications.

FAQ

What is the function of the RWDS pin in S80KS5123GABHB020?

RWDS serves three distinct roles: (1) outputs HIGH during command/address phases to indicate required refresh hold time (tRFH); (2) acts as read data strobe during read transactions; and (3) functions as write data mask during write transactions. Its bidirectional behavior is controlled automatically by internal logic based on transaction type and phase - no host configuration is needed beyond standard xSPI timing compliance.

Does S80KS5123GABHB020 require external refresh management?

No. The device integrates fully autonomous self-refresh logic that manages both full-array and partial-array (1/8, 1/4, 1/2) refresh cycles without host intervention. The host only observes refresh latency via RWDS signaling and inserts corresponding delays - eliminating DRAM controller complexity and timing-critical software routines typically required for conventional DRAM.

Can S80KS5123GABHB020 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance, and setup/hold timing margins are reduced versus differential operation. All other interface functionality - including RWDS behavior, burst modes, and power states - remains identical in both configurations.

What is the minimum supported burst length and how is it configured?

The minimum supported wrapped burst length is 16 bytes (8 clocks), selectable via configuration register bit [BLEN] in the device's register space. Linear burst mode supports arbitrary lengths but is constrained by transaction duration limits imposed by internal refresh scheduling. Burst mode selection is persistent across power cycles when stored in nonvolatile configuration bits, and can be modified dynamically via WRITE ANY REGISTER commands during operation.