Infineon Technologies S80KS5123GABHB023

Overview

S80KS5123GABHB023 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, supports configurable burst lengths (16–128 bytes), and integrates on-die refresh control for pseudo-static operation in embedded microcontroller systems.

For engineers reviewing the S80KS5123GABHB023 datasheet, S80KS5123GABHB023 pinout, S80KS5123GABHB023 application, or S80KS5123GABHB023 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, hybrid sleep/deep power-down current specs (3.1 mA / 30 µA at 105 °C), and FBGA-24 package thermal performance across industrial (–40 °C to +85 °C) and automotive AEC-Q100 Grade 2 (–40 °C to +105 °C) temperature grades.

Technical Context

The device implements a dual-die 512 Mb architecture (2 × 256 Mb), where each die operates independently under shared xSPI protocol control. All transactions begin with CS# assertion and require 16-bit command opcodes-sent MSb-first on both CK edges-with optional address and data phases.

RWDS serves a dual role: it outputs refresh-latency indication (HIGH) during command/address phase and acts as read-data strobe or write-data mask during data phase. Internal refresh logic autonomously manages partial (1/8–1/2) or full array refresh without host intervention, enabling PSRAM-like usage while maintaining DRAM density and cost efficiency.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), optimized for high-density PCB layouts and thermal dissipation in automotive and industrial modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed PSRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S80KS5123GABHB023 provides double the density, integrated refresh autonomy, and xSPI-native command handling-reducing MCU firmware burden and simplifying layout in next-gen automotive and industrial edge devices.

Availability

S80KS5123GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI inference accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5123GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained MCUs-designed specifically to replace legacy SRAM and parallel NOR flash in automotive, industrial, and consumer UI subsystems.

FAQ

What is the function of the RWDS pin during a read transaction?

RWDS functions as a read data strobe during the data phase of a read transaction, providing precise timing alignment for sampling DQ[7:0] data. During the command and address phase, it asserts HIGH to indicate required refresh latency (tRFH), which the host must honor before data transfer begins. This dual-role signaling eliminates need for separate control lines while preserving deterministic timing.

Does S80KS5123GABHB023 require external refresh management?

No. The device contains fully autonomous on-die refresh logic that executes partial or full array refreshes without host intervention. The host only needs to observe RWDS latency indications and avoid exceeding maximum burst duration limits. This enables true PSRAM-like usage-no refresh registers, timers, or periodic service interrupts are required in the MCU firmware.

Can this part operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported and commonly used in cost-sensitive industrial designs. Differential clock (CK/CK#) is optional and recommended only for high-noise automotive environments where EMI immunity is critical. Both configurations use identical xSPI command sets and timing parameters; no firmware changes are needed when switching between them.

How does the hybrid burst mode improve system-level performance?

Hybrid burst mode combines one wrapped burst (for cache-line-aligned access) followed by linear burst (for sequential streaming), reducing bus turnaround time and improving effective bandwidth in mixed-access workloads like GUI rendering with texture tiles and font bitmaps. It avoids the inefficiency of pure wrapped bursts for large contiguous transfers while maintaining cache-friendly alignment for small objects.