Infineon Technologies S80KS5123GABHI020

Overview

S80KS5123GABHI020 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It integrates dual 256 Mb dies in a single 24-ball FBGA package, features configurable burst lengths (16–128 bytes), partial/full array refresh, and operates across –40 °C to +85 °C (Industrial grade).

For engineers reviewing the S80KS5123GABHI020 datasheet, S80KS5123GABHI020 pinout, S80KS5123GABHI020 application, or S80KS5123GABHI020 equivalent, key selection criteria include xSPI octal DDR timing compliance, RWDS-driven refresh latency signaling, hybrid sleep/deep power-down mode support, and 24-ball FBGA layout compatibility for high-density embedded memory expansion.

Technical Context

The S80KS5123GABHI020 implements a dual-die 512 Mb architecture with on-die self-refresh control logic that autonomously manages DRAM refresh without host intervention-enabling PSRAM-like simplicity. Its xSPI octal interface uses 8-bit bidirectional DQ lines with DDR clocking (CK/CK# optional), RWDS as dynamic read strobe/write mask, and CS#-driven transaction framing.

All transactions begin with a 16-bit command (dual 8-bit opcode), support linear or wrapped burst modes (16/32/64/128-byte), and require continuous CK toggling during latency periods signaled via RWDS HIGH assertion-ensuring deterministic tRFH timing for internal refresh scheduling.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, designed for automated PCB assembly and thermal reliability in space-constrained designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KS0641DPBHV020 and W9825G6JH-6I, the S80KS5123GABHI020 uniquely delivers 512 Mb density in minimal pins with autonomous refresh and deterministic RWDS latency-making it optimal for MCU-based edge devices needing scalable, low-overhead external memory.

Availability

S80KS5123GABHI020 is available at Aetrix Electronics and suitable for automotive ADAS camera buffers, industrial PLC real-time data logging, and edge AI inference accelerator caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5123GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU- and SoC-based embedded systems needing high-bandwidth, low-pin-count external memory with PSRAM usability-bridging the gap between SRAM simplicity and DRAM density.

FAQ

What is the role of the RWDS signal in S80KS5123GABHI020 operation?

RWDS serves three critical functions: (1) as a read data strobe aligned with DQ valid windows during read transactions, (2) as a write data mask enabling byte-selective writes, and (3) as a latency indicator-driven HIGH during command/address phases to signal required tRFH refresh delay before data transfer begins. This eliminates need for fixed worst-case latency assumptions in host firmware.

Does S80KS5123GABHI020 require external refresh management?

No. The device contains fully autonomous on-die refresh control logic that schedules partial or full array refreshes during idle periods or transaction gaps. The host only needs to observe RWDS latency signaling and avoid exceeding maximum burst duration limits-no refresh commands, timers, or scheduling logic are required in the host software stack.

Can S80KS5123GABHI020 operate with single-ended clock only?

Yes. The device supports single-ended CK input by default. CK# is optional and used only when differential clocking is implemented for improved noise immunity in electrically noisy environments. Both configurations use identical timing specifications and do not affect functional behavior or register settings.

What is the significance of "hybrid burst" mode in this HYPERRAM device?

Hybrid burst combines one wrapped burst (for cache-line-aligned access) followed by linear burst (for sequential streaming), specifically supported on 256 Mb die boundaries. It enables efficient handling of mixed workloads-e.g., fetching a header (wrapped) then streaming payload (linear)-without requiring separate transactions or address reprogramming, improving effective throughput in protocol-aware applications.