Infineon Technologies S80KS5123GABHI023

Overview

S80KS5123GABHI023 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers up to 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz differential or single-ended clock (CK/CK#), and integrates on-die refresh control to emulate PSRAM behavior in industrial applications requiring low-pin-count high-bandwidth memory.

For engineers reviewing the S80KS5123GABHI023 datasheet, S80KS5123GABHI023 pinout, S80KS5123GABHI023 application, or S80KS5123GABHI023 equivalent, this device supports linear/wrapped burst lengths (16–128 bytes), configurable drive strength, hybrid sleep/deep power-down modes, and operates across –40 °C to +85 °C (Industrial grade) in a 24-ball FBGA package.

Technical Context

The S80KS5123GABHI023 implements a dual-die 512 Mb architecture (2 × 256 Mb), where each die operates independently under xSPI command protocol. Its internal refresh logic autonomously manages array refresh without host intervention, enabling pseudo-static operation while enforcing transaction-length constraints to accommodate tRFH latency signaled via RWDS.

All transactions begin with CS# assertion and use 16-bit commands (dual 8-bit opcodes sent on both CK edges). Read/write bursts support DDR-aligned 8-bit DQ transfers with RWDS functioning as bidirectional strobe-outputting refresh latency indication during command/address phase and serving as read data strobe or write mask during data phase.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and JEDEC-standard mechanical dimensions. Pin assignments are defined per Infineon's physical interface specification (Datasheet Rev. *E, Section 11).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S80KS5123GABHI023 uniquely combines octal xSPI bandwidth, self-refresh autonomy, and industrial temperature reliability in a 24-ball FBGA - making it optimal for resource-constrained embedded systems needing PSRAM simplicity with DRAM density.

Availability

S80KS5123GABHI023 is available at Aetrix Electronics and suitable for automotive digital instrument clusters, industrial HMI graphics buffers, and edge AI inference accelerators requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.

Supply support for S80KS5123GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets embedded systems needing high-density, low-pin-count memory with PSRAM-like ease-of-use - specifically designed for MCU- and SoC-based applications where parallel DRAM complexity and Quad SPI bandwidth limits are unacceptable.

FAQ

Does S80KS5123GABHI023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh without host intervention. The host only needs to observe tRFH latency signaled via RWDS and limit burst duration per datasheet Section 1. The memory presents a pseudo-static interface, eliminating refresh scheduling overhead in firmware or hardware.

What is the function of the RWDS pin during different transaction phases?

RWDS serves three distinct roles: (1) outputs HIGH during command/address phase to indicate required refresh latency (tRFH); (2) acts as read data strobe during read data transfer; and (3) functions as write data mask during write data transfer. Its bidirectional behavior is controlled automatically by internal state machine and requires no host direction signal.

Can S80KS5123GABHI023 operate with single-ended clock only?

Yes. The device supports both differential (CK/CK#) and single-ended (CK only) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet Section 3.1, and timing margins adjust accordingly - tACC remains 35 ns max, but setup/hold requirements differ slightly per AC specs Table 10.4.

Is linear burst supported across the 512 Mb address space?

No. Linear burst is supported only within a single 256 Mb die. The dual-die architecture prohibits linear burst crossing the die boundary (address 0x0000_0000–0x0FFF_FFFF vs 0x1000_0000–0x1FFF_FFFF). Attempting such access results in undefined behavior; wrapped burst or separate transactions must be used for cross-die data movement.