Infineon Technologies S80KS5123GABHV020

Overview

S80KS5123GABHV020 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers up to 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz differential or single-ended clock, and supports partial array refresh, hybrid sleep mode, and industrial-plus temperature range (–40 °C to +105 °C). It serves as high-bandwidth, low-pin-count external memory for microcontroller-based embedded systems requiring PSRAM-like simplicity.

For engineers reviewing the S80KS5123GABHV020 datasheet, S80KS5123GABHV020 pinout, S80KS5123GABHV020 application, or S80KS5123GABHV020 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, configurable burst lengths (16–128 bytes), drive strength settings, and AEC-Q100 Grade 2 qualification for automotive thermal environments.

Technical Context

This device implements a dual-die 512 Mb architecture (2 × 256 Mb), where each die operates independently under shared xSPI control. The internal refresh controller autonomously manages row activation and precharge cycles without host intervention, enabling pseudo-static operation despite dynamic cell storage.

The xSPI interface uses DDR signaling across eight bidirectional DQ lines with RWDS serving dual roles: as a read data strobe (output) and write data mask (input), while CK/CK# defines edge-aligned sampling. Command decoding relies on 16-bit opcodes (two repeated 8-bit fields), and all transactions are CS#-gated with MSb-first bit ordering for commands, addresses, and data.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for high-density PCB layouts with thermal reliability in extended temperature operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with CY15B104QN-SXIT and IS66WV12816EBLL-15BLI, S80KS5123GABHV020 uniquely combines 512 Mb density, xSPI pin efficiency, self-refresh autonomy, and automotive-grade thermal resilience-making it optimal for bandwidth-constrained, memory-intensive embedded systems where firmware simplicity and power scalability are critical.

Availability

S80KS5123GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI sensor nodes, and medical portable monitors requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS5123GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S80KS5123GABHV020 belongs to the HYPERRAM™ family-designed specifically to replace parallel PSRAM and NOR flash in bandwidth-constrained, space-limited embedded systems using simplified xSPI protocols.

FAQ

What is the function of the RWDS signal in S80KS5123GABHV020?

RWDS serves a dual role: during read transactions, it outputs a data-valid strobe aligned to incoming DQ data; during write transactions, it acts as a byte mask input controlling which DQ[7:0] lanes accept data. It also asserts HIGH during command/address phases to indicate required refresh latency (tRFH), informing the host to extend initial access delay before data transfer begins.

Does S80KS5123GABHV020 require external refresh control from the host MCU?

No. The device integrates autonomous self-refresh logic that schedules and executes DRAM row refreshes internally when the xSPI interface is idle. The host only issues standard xSPI commands and observes RWDS-driven latency extensions-no refresh registers, timers, or scheduling routines are needed in firmware.

Can S80KS5123GABHV020 operate with a single-ended clock instead of differential CK/CK#?

Yes. The device supports both differential (CK/CK#) and single-ended (CK only) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance, and timing margins tighten slightly due to reduced noise immunity-designers should verify setup/hold against AC specs at target frequency and voltage.

What package variant does S80KS5123GABHV020 use, and is it compatible with standard reflow profiles?

S80KS5123GABHV020 uses a 24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch) with SnAgCu (SAC305) solder balls. It is qualified for standard lead-free reflow profiles (J-STD-020 Class 3A), including peak temperatures up to 260 °C for ≤60 seconds, and supports automated optical inspection (AOI) and X-ray void analysis per IPC-A-610.