Infineon Technologies S80KS5123GABHV023

Overview

S80KS5123GABHV023 from Infineon Technologies is a 512 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers up to 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz differential or single-ended clock, and integrates on-die refresh logic to emulate PSRAM behavior in microcontroller-based embedded systems requiring low-pin-count high-bandwidth memory expansion.

For engineers reviewing the S80KS5123GABHV023 datasheet, S80KS5123GABHV023 pinout, S80KS5123GABHV023 application, or S80KS5123GABHV023 equivalent, key selection criteria include its 24-ball FBGA package, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS domain controllers.

Technical Context

The device implements a dual-die 512 Mb architecture (2 × 256 Mb), with each die supporting independent xSPI command execution and internal partial/full array refresh. Its xSPI interface uses 16-bit command opcodes (MSb-first), supports linear and wrapped burst modes, and relies on RWDS as both read data strobe and write mask signal - requiring host coordination of tRFH latency windows indicated by RWDS HIGH assertion during command/address phases.

Refresh management is fully autonomous: the on-chip controller schedules row refreshes during idle cycles or transaction gaps, eliminating host refresh overhead. Power states include interface standby, active clock stop, hybrid sleep (retaining data with reduced current), and deep power down (30 µA at 105 °C), all entered via dedicated xSPI commands without external control signals.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch and 5 mm × 5 mm body size. RoHS-compliant, lead-free, and moisture sensitivity level (MSL) 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth, low-pin-count external memory applications.

Compared with S27KS0641DPBHV020 and W9825G6KH-6I, the S80KS5123GABHV023 uniquely combines automotive-grade reliability, 512 Mb capacity, and self-refresh simplicity in a minimal 24-ball footprint - making it optimal for next-generation domain controllers where pin count, power, and qualification converge.

Availability

S80KS5123GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS camera preprocessing, and edge AI inference nodes requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS5123GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The HYPERRAM™ product line targets embedded systems needing high-speed, low-pin-count external memory - specifically designed to replace parallel PSRAM and reduce interface complexity in MCU- and SoC-based automotive, industrial, and IoT platforms.

FAQ

Does S80KS5123GABHV023 require external refresh circuitry or host-driven refresh commands?

No. The device contains fully autonomous on-die refresh logic that executes partial or full array refreshes during idle periods or transaction gaps. Host firmware never issues refresh commands or tracks refresh intervals - the memory behaves as pseudo-static RAM (PSRAM) from the system perspective, with RWDS signaling required tRFH latency windows only.

What is the function of the RWDS pin beyond data strobing?

RWDS serves three distinct roles: (1) as read data strobe during read transactions, (2) as write data mask during write transactions, and (3) as a latency indicator - driven HIGH by the device during command/address phases when internal refresh is pending (tRFH). This eliminates need for separate status pins or polling registers.

Can S80KS5123GABHV023 operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock operation is fully supported using only the CK pin; CK# is optional. The device automatically detects clock mode at power-up based on CK# voltage level. Differential mode improves noise immunity and timing margin in electrically noisy automotive environments, but CK-only mode reduces routing complexity in space-constrained industrial PCBs.

How does the hybrid burst mode improve memory efficiency in real-world use cases?

Hybrid burst mode executes one wrapped burst (e.g., 64 bytes) followed by linear burst on the same 256 Mb die, enabling seamless access across page boundaries without manual address wrap handling in firmware. This is especially valuable for streaming video lines or neural network weight matrices where sequential access crosses natural DRAM row boundaries.