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NXP Semiconductors SA5211D/01,112

Part No.:
SA5211D/01,112
Manufacturer:
NXP Semiconductors
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
14-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSA5211D/01,112.pdf
Description:
IC TRANSIMPEDANCE 1 CIRCUIT 14SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,183

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Product details

Overview

SA5211D/01,112 from NXP Semiconductors (formerly Philips) is a bipolar transimpedance amplifier optimized for fiber-optic receiver front-ends, delivering 28 kΩ differential transresistance, 180 MHz bandwidth, and 1.8 pA/√Hz input-referred noise current - enabling high-sensitivity analog/digital optical signal recovery at 50–400 Mbaud data rates.

For engineers reviewing the SA5211D/01,112 datasheet, SA5211D/01,112 pinout, SA5211D/01,112 application, or SA5211D/01,112 equivalent, this device is selected for low-noise current-to-voltage conversion in photodiode-based systems where wide dynamic range, ECL-compatible differential outputs, and photodiode capacitance desensitization are critical design requirements.

Technical Context

The SA5211D/01,112 employs a shunt-series feedback input stage with a 14.4 kΩ internal feedback resistor, yielding a nominal 28 kΩ differential transresistance. Its fully differential signal path - including A2 gain stage and emitter-follower output buffers - provides high PSRR (up to 65 dB on VCC2) and supports direct interfacing to ECL logic.

Bandwidth is stabilized by dominant-pole design (RIN ≈ 200 Ω, CIN ≈ 4 pF), achieving 180 MHz f3dB while maintaining insensitivity to photodiode capacitance up to 1 pF. Input is current-driven and referenced to GND1; outputs are complementary voltage signals at OUT(+) and OUT(−) with ~17 Ω single-ended output impedance.

Key Specifications

ParameterValue and Actual Design Meaning
Differential transresistance28 kΩ (typical; enables 2.8 V output swing per 100 µA input current)
Bandwidth (−3 dB)180 MHz (supports NRZ data rates up to 400 Mbaud with adequate margin)
Input noise density1.8 pA/√Hz (typical at 10 MHz; sets fundamental sensitivity limit for low-light detection)
Supply voltage4.5–5.5 V (single 5 V rail; requires local 0.1 µF + 10 µF decoupling per VCC pin)
Output configurationDifferential voltage outputs (OUT(+)/OUT(−); 3.3 V quiescent bias with 3.2 VP-P swing capability)
Input impedance200 Ω (low RIN minimizes noise gain degradation from photodiode capacitance)
PSRR (VCC2)45–65 dB (DC tested; critical for rejecting supply noise in high-gain optical front-ends)

Pinout & Package

SA5211D/01,112 is housed in a 14-lead SOIC package (SOT108-1, body width 3.9 mm) with exposed thermal pad not connected internally. Pin functions are validated per Philips Rev. 03 datasheet and bonding diagram (SD00488).

Pin/TerminalCircuit RoleDesign Meaning
1, 2GND2Output-stage ground return; isolated from GND1 to prevent photodiode current coupling into output paths
3, 5NCNo-connect pins; must be left unconnected or tied to GND1 only if shielding required (adds input capacitance)
4IINCurrent-input node referenced to GND1; connects directly to photodiode cathode
6, 7VCC1, VCC2Separate supply rails for input and output stages; decouple independently to suppress inter-stage noise coupling
8–11GND1Photodiode and input-stage ground; requires low-inductance plane connection to minimize noise pickup
12, 14OUT(−), OUT(+)Differential voltage outputs; each has ~17 Ω source impedance; use 33 Ω series resistors for 50 Ω system matching

Key Features

FeatureDesign Value
Photodiode capacitance desensitizationMaintains 180 MHz bandwidth with up to 1 pF external photodiode capacitance due to Miller-effect dominance
Differential architectureEnables >60 dB common-mode rejection and direct interface to ECL receivers without level-shifting circuitry
Low input-referred noise1.8 pA/√Hz allows detection of sub-nA photocurrents in 200 MHz bandwidth (41 nA RMS integrated noise)
High overload threshold±60 µA maximum input current before clipping; supports >60 dB electrical dynamic range
Stable high-frequency layoutRequires dedicated GND1/GND2 planes and 0.1 µF chip capacitors at each VCC pin to prevent 800 MHz oscillation

Applications

Fiber Optic Receiver Front-EndCurrent-to-Voltage Conversion

Use Scenario: Recovering analog/digital optical signals from 850 nm LED or laser diode in 50–400 Mbaud links.

IC Role / Device Role / Timing Role: Transimpedance preamplifier converting photodiode current to differential voltage with minimal added noise.

Use Value: 1.8 pA/√Hz noise and 180 MHz bandwidth enable BER <10⁻⁹ at −31.5 dBm optical input power (850 nm, 200 MHz BW).

Use Scenario: Converting weak sensor currents (e.g., radiation detectors, photomultipliers) into measurable voltage signals.

IC Role / Device Role / Timing Role: High-linearity, low-drift current-input amplifier with 2% linearity over ±40 µA input range.

Use Value: 28 kΩ transresistance and 200 Ω input resistance provide optimal SNR for picoamp-level current sources with stray capacitance.

RF Signal Processing ChainSingle-Ended to Differential Conversion

Use Scenario: Amplifying and conditioning RF current-mode signals in test equipment or spectrum analyzers.

IC Role / Device Role / Timing Role: Wideband gain block with 180 MHz flat response and 23–65 dB PSRR across dual supplies.

Use Value: Differential outputs reject supply noise; 180 MHz bandwidth supports IF processing up to L-band frequencies.

Use Scenario: Driving differential ADC inputs or balanced mixers from single-ended current sources.

IC Role / Device Role / Timing Role: Current-input, differential-output converter eliminating need for transformer or active balun.

Use Value: Inherent common-mode rejection and 3.3 V DC bias simplify interface to 3.3 V logic or RF ICs requiring differential signaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transimpedance amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
OPA657IDBVR1.6 GHz bandwidth, FET input, 4.8 pA/√Hz noise; single-ended output; requires external feedback networkBetter for >500 MHz applications but lacks integrated differential output and photodiode-optimized stabilitySelect OPA657IDBVR when bandwidth >500 MHz is required and board space allows discrete feedback design
LMH6629MA/NOPB1.5 GHz bandwidth, bipolar input, 2.9 nV/√Hz voltage noise; single-ended output; no built-in transresistanceSuited for voltage-input high-speed amplification; not a drop-in replacement for photodiode current sensingChoose LMH6629MA/NOPB for ultra-wideband voltage amplification where transimpedance function is implemented externally

Compared with OPA657IDBVR and LMH6629MA/NOPB, the SA5211D/01,112 delivers purpose-built photodiode interface performance - including integrated 28 kΩ transresistance, differential outputs, and proven stability with 1 pF photodiode capacitance - making it uniquely suited for cost-sensitive, production-ready fiber-optic receiver designs below 400 Mbaud.

Availability

SA5211D/01,112 is available at Aetrix Electronics and suitable for fiber-optic receivers, medical photodetector systems, and RF instrumentation requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for SA5211D/01,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The SA5211D/01,112 belongs to NXP's legacy high-speed analog amplifier portfolio, originally designed for fiber-optic communication infrastructure - emphasizing low-noise current amplification, photodiode capacitance tolerance, and differential ECL compatibility.

FAQ

What is the maximum input current the SA5211D/01,112 can handle before clipping occurs?

The SA5211D/01,112 exhibits output stage clipping at approximately ±65 µA input current under typical conditions, with guaranteed overload threshold of ±60 µA (Test Circuit 8, Procedure 4). This corresponds to a differential output swing of 3.2 VP-P and supports >60 dB electrical dynamic range in a 200 MHz bandwidth. Exceeding ±65 µA risks distortion and degraded linearity.

Does the SA5211D/01,112 require dual power supplies or can it operate from a single 5 V rail?

The SA5211D/01,112 operates from a single 5 V supply but uses two separate VCC pins - VCC1 (pin 6) for the input stage and VCC2 (pin 7) for the output stage. Both pins must be connected to the same 4.5–5.5 V rail, with independent 0.1 µF ceramic + 10 µF tantalum decoupling to ground. This dual-pin architecture improves PSRR and isolates supply noise between stages.

How does the SA5211D/01,112 maintain bandwidth stability with varying photodiode capacitance?

The SA5211D/01,112 achieves photodiode capacitance desensitization through a shunt-series feedback input stage where the Miller effect dominates over external capacitance. With typical CIN = 4 pF and RIN = 200 Ω, it maintains 180 MHz bandwidth even with +1 pF photodiode capacitance - a ≤20% reduction - unlike conventional TIAs where bandwidth drops quadratically with capacitance.

What is the recommended PCB layout practice to prevent oscillation in the SA5211D/01,112?

To prevent 800 MHz oscillation, the SA5211D/01,112 requires strict separation of GND1 (pins 8–11, photodiode input ground) and GND2 (pins 1–2, output ground) via a low-inductance ground-plane stripe connecting both under the SO14 package. Each VCC pin must have a 0.1 µF chip capacitor placed within 2 mm of the pin, and photodiode traces must be kept <2 mm long and adjacent to GND1.

Is the SA5211D/01,112 pin-compatible with newer NXP transimpedance amplifiers like the SA5214?

No, the SA5211D/01,112 is not pin-compatible with the SA5214 or other members of the SA52xx family. The SA5214 is a post-amplifier with different pinout (e.g., TTL output drivers), while the SA5211D/01,112 is a dedicated transimpedance preamplifier. Their functional roles are complementary - SA5211D/01,112 recovers photodiode current; SA5214 conditions its output - and they are designed for cascade use, not substitution.

SA5211D/01,112 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
14-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Amplifier Type:
Transimpedance
Number of Circuits:
1
Output Type:
Differential
Slew Rate:
-
Gain Bandwidth Product:
-
-3db Bandwidth:
180 MHz
Current - Input Bias:
-
Voltage - Input Offset:
-
Current - Supply:
26mA
Current - Output / Channel:
4 mA
Voltage - Supply Span (Min):
4.5 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
14-SO

SA5211D/01,112 FAQ

1.How can I place an order for SA5211D/01,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for SA5211D/01,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SA5211D/01,112 reliable?

The price and inventory of SA5211D/01,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SA5211D/01,112 is usually 5 days.

3.What payment methods are accepted for SA5211D/01,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SA5211D/01,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SA5211D/01,112?

SA5211D/01,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SA5211D/01,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SA5211D/01,112?

For technical support, including SA5211D/01,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SA5211D/01,112 requirements.

6.How does Aetrix verify that SA5211D/01,112 is sourced from the original manufacturer or authorized distributors?

All SA5211D/01,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SA5211D/01,112 meets industry standards.

7.What is the process for return or replacement of SA5211D/01,112?

All SA5211D/01,112 units undergo pre-shipment inspection (PSI). If there is an issue with SA5211D/01,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SA5211D/01,112 part is unused and in its original packaging.

Return procedure for SA5211D/01,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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