NXP Semiconductors SA601DK,112

Overview

SA601DK,112 from NXP Semiconductors (formerly Philips Semiconductors) is a monolithic 800–1200 MHz RF front-end IC integrating a low-noise amplifier (LNA) and double-balanced mixer in a single 20-pin SSOP package. It delivers 11.5 dB LNA gain, 1.6 dB noise figure at 900 MHz, and −2 dBm input IP3, operating from a 2.7–5.5 V supply with 7.4 mA nominal current. It is designed for 900 MHz cellular and cordless receiver front-ends requiring high linearity and low power.

For engineers reviewing the SA601DK,112 datasheet, SA601DK,112 pinout, SA601DK,112 application, or SA601DK,112 equivalent, this page provides verified functional specifications, temperature-stable gain behavior, mixer power-down capability, LO drive requirements, and real-world RF isolation metrics critical for 900 MHz transceiver design and layout validation.

Technical Context

The SA601DK,112 integrates a cascode LNA with on-chip temperature and supply-voltage compensation, achieving ±0.2 dB gain variation over −40 to +85°C and ≤0.5 dB change from 3 V to 5 V. Its mixer employs passive power combining and accepts external −7 dBm LO drive at 964 MHz, delivering 19.5 dB voltage conversion gain and 9.5 dB SSB noise figure at 83 MHz IF.

RF signal flow is strictly partitioned: LNA output feeds mixer RF input via internal isolation of −40 dB, while LO feedthrough to IF is −25 dB and to LNA input is −40 dB. Mixer power-down (Pin 7) reduces total supply current from 7.4 mA to 4.4 mA by disabling mixer bias without affecting LNA operation.

Key Specifications

Pinout & Package

SA601DK,112 is housed in a 20-pin plastic shrink small outline package (SSOP), body width 4.4 mm, per SOT266-1 outline. Pin pitch is 0.65 mm; package is surface-mount compatible and rated for −40 to +85°C ambient operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF front-end applications.

Compared with MAX2682EUT+T and SKY65111-348LF, the SA601DK,112 uniquely balances ultra-low noise (1.6 dB), high gain (11.5 dB), integrated mixing, and ultra-low 7.4 mA supply current - making it optimal for receive-only, battery-sensitive 900 MHz applications where discrete LO drive and thermal stability are critical.

Availability

SA601DK,112 is available at Aetrix Electronics and suitable for 900 MHz cellular infrastructure, cordless telephony, and ISM-band wireless sensor applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across temperature.

Supply support for SA601DK,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The SA601DK,112 belongs to NXP's legacy RF front-end product line, originally developed for high-performance, low-power 900 MHz receiver architectures in cellular and cordless communications systems.

FAQ

What is the recommended supply voltage range for stable operation of the SA601DK,112?

The SA601DK,112 operates reliably across a 2.7 V to 5.5 V supply range. At 3 V, it draws 7.4 mA nominal current and achieves specified LNA gain (11.5 dB), noise figure (1.6 dB), and mixer conversion gain (19.5 dB). Gain variation remains within ±0.5 dB from 3 V to 5 V due to on-chip supply compensation, making the SA601DK,112 suitable for both battery-powered and regulated supply designs.

How does the SA601DK,112 achieve its 1.6 dB noise figure at 900 MHz?

The SA601DK,112 achieves 1.6 dB noise figure through optimized cascode LNA topology with intrinsic 7 dB input return loss and precise noise matching. External L/C matching (e.g., 2.7 pF and 56 nH per Figure 3) improves S11 to −10 dB at 881 MHz, aligning the impedance for minimum noise source reflection. This configuration is validated in the SA601DK,112 datasheet and yields the specified 1.6 dB NF at 900 MHz under 3 V, 25°C conditions.

Can the SA601DK,112 be used with a single-ended LO source?

Yes - the SA601DK,112 accepts single-ended LO drive at either LOIN1 (Pin 18) or LOIN2 (Pin 19), with the other pin AC-grounded. The internal LO port is designed for −7 dBm drive level at 964 MHz. Using a 4.7 nH inductor in place of R1 and adjusting C3 improves LO return loss, enabling reliable operation even with −10 dBm LO input, as documented for the SA601DK,112 in its application circuit guidelines.

What is the function of Pin 7 (MIXER PWRDN) on the SA601DK,112?

Pin 7 is the active-low mixer power-down control. When pulled to GND, it disables the mixer core while leaving the LNA fully operational, reducing total supply current from 7.4 mA to 4.4 mA - a 3 mA saving. This feature allows the SA601DK,112 to maintain RF receive readiness with minimal power overhead during idle periods, a key advantage in duty-cycled 900 MHz receivers.

Does the SA601DK,112 require external matching components for optimal RF performance?

Yes - external L/C networks are required for optimal LNA input match (S11), LNA output to mixer input interface, and mixer RF input match (S11M). The SA601DK,112 datasheet specifies component values (e.g., 2.7 pF and 56 nH for LNA IN; 4.7 pF for MIXER IN) to achieve −10 dB return loss and full specification compliance. Without these, measured S11 degrades to −7 dB and noise figure increases to ~1.4 dB, as noted in the SA601DK,112 circuit technology section.