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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi SBC807-25LT1

Name: SBC807-25LT1
Brand: onsemi
SKU: SBC807-25LT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SBC807-25LT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SBC807-25LT1.pdf

Description:: TRANS PNP 45V 0.5A SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SBC807-25LT1 from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −45 V V_CEO, −500 mA I_C, and 225 mW power dissipation on FR-5 board. It delivers h_FE = 160–400 at I_C = −100 mA/V_CE = −1.0 V and supports low-saturation switching in discrete bias networks and level-shifting circuits.

For engineers reviewing the SBC807-25LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain range, guaranteed V_CE(sat) ≤ −0.7 V at I_C/I_B = 10, thermal resistance of 556 °C/W (FR-5), ESD-safe handling per JESD22-A114, and Pb-free SOT-23 footprint compatibility with automated assembly.

Technical Context

The SBC807-25LT1 operates as a medium-current PNP bipolar junction transistor optimized for linear amplification and saturated switching. Its h_FE binning (160–400) ensures predictable base drive requirements across production lots, while its −5.0 V V_EBO rating enables safe operation in emitter-follower configurations with modest reverse bias.

Thermal performance is defined for two mounting conditions: 225 mW @ 25°C on FR-5 board (derating 1.8 mW/°C), and 300 mW @ 25°C on alumina substrate (derating 2.4 mW/°C). Junction temperature range spans −55°C to +150°C, supporting industrial ambient operation without derating below 100°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum collector-emitter voltage before breakdown under open-base condition; sets upper limit for rail-to-rail swing in high-side switch designs.
I_C (max)	−500 mA - Continuous collector current rating; defines maximum load-handling capability in DC-coupled driver stages.
h_FE	160–400 - DC current gain at I_C = −100 mA, V_CE = −1.0 V; determines required base resistor value for reliable saturation.
V_CE(sat)	≤ −0.7 V - Collector-emitter saturation voltage at I_C = −500 mA, I_B = −50 mA; directly impacts conduction loss and thermal rise in switching applications.
f_T	100 MHz - Current-gain bandwidth product at I_C = −10 mA, V_CE = −5.0 V; indicates usable frequency limit for small-signal amplification.
R_JA (FR-5)	556 °C/W - Junction-to-ambient thermal resistance on standard FR-5 PCB; used to calculate worst-case junction temperature rise under steady-state power dissipation.

Pinout & Package

SOT-23 (Case 318, Style 6) surface-mount plastic package with gull-wing leads; 3-pin configuration, 1.3 mm × 2.9 mm × 1.0 mm body dimensions, 0.95 mm lead pitch, and Pb-free termination.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative current relative to emitter to turn on device.
2	Emitter	Current source terminal in PNP topology; connected to higher potential rail in high-side switch implementations.
3	Collector	Current sink terminal; delivers load current to ground or lower-potential node when device is saturated.

Key Features

Feature	Design Value
Pb-free SOT-23 packaging	Complies with RoHS Directive 2011/65/EU and JEDEC JS-001 ESD classification (HBM Class 2, ≥2 kV).
Guaranteed h_FE binning	160–400 range ensures consistent base drive design across production batches without recalculating R_B.
Low V_CE(sat)	≤ −0.7 V at I_C/I_B = 10 minimizes power loss and self-heating during sustained conduction.
Wide T_J range	−55°C to +150°C operation supports deployment in automotive engine compartments and industrial motor control enclosures.

Applications

LED Driver Stage	Level-Shifting Interface
Use Scenario: Driving 20–100 mA indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins with inverted logic. IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode, sinking current from LED anode to ground via collector. Use Value: V_CE(sat) ≤ −0.7 V ensures <150 mW dissipation at 100 mA, enabling reliable operation without heatsinking on standard PCBs.	Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage I²C or UART buses. IC Role / Device Role / Timing Role: Active pull-up element in open-drain interface, providing bidirectional level translation with minimal propagation delay. Use Value: f_T = 100 MHz supports signal integrity up to 10 Mbps, while h_FE > 160 ensures stable output impedance across temperature.
High-Side Load Switch	Discrete Bias Network
Use Scenario: Controlling 12 V solenoids or relays using 3.3 V MCU outputs in automotive body electronics modules. IC Role / Device Role / Timing Role: High-side switch with emitter tied to 12 V rail, collector driving load to ground, base driven through current-limiting resistor. Use Value: V_CEO = −45 V provides 3× safety margin over 12 V rail, and −500 mA I_C rating accommodates inrush currents up to 400 mA.	Use Scenario: Setting precise quiescent current in Class-A audio preamplifier stages or sensor signal conditioning circuits. IC Role / Device Role / Timing Role: Linear amplifier operating in active region with fixed base bias, delivering stable DC gain and low distortion. Use Value: Tight h_FE binning (160–400) reduces unit-to-unit gain variation, minimizing calibration effort in production test.

LED Driver Stage

Level-Shifting Interface

Use Scenario: Driving 20–100 mA indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins with inverted logic.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode, sinking current from LED anode to ground via collector.

Use Value: V_CE(sat) ≤ −0.7 V ensures <150 mW dissipation at 100 mA, enabling reliable operation without heatsinking on standard PCBs.

Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage I²C or UART buses.

IC Role / Device Role / Timing Role: Active pull-up element in open-drain interface, providing bidirectional level translation with minimal propagation delay.

Use Value: f_T = 100 MHz supports signal integrity up to 10 Mbps, while h_FE > 160 ensures stable output impedance across temperature.

High-Side Load Switch

Discrete Bias Network

Use Scenario: Controlling 12 V solenoids or relays using 3.3 V MCU outputs in automotive body electronics modules.

IC Role / Device Role / Timing Role: High-side switch with emitter tied to 12 V rail, collector driving load to ground, base driven through current-limiting resistor.

Use Value: V_CEO = −45 V provides 3× safety margin over 12 V rail, and −500 mA I_C rating accommodates inrush currents up to 400 mA.

Use Scenario: Setting precise quiescent current in Class-A audio preamplifier stages or sensor signal conditioning circuits.

IC Role / Device Role / Timing Role: Linear amplifier operating in active region with fixed base bias, delivering stable DC gain and low distortion.

Use Value: Tight h_FE binning (160–400) reduces unit-to-unit gain variation, minimizing calibration effort in production test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-25LT1G	Pb-free variant with identical electrical specs and SOT-23 package; same marking code (5B1) but "G" suffix denotes green compliance.	No functional difference; selected when RoHS-compliant soldering process or material declaration is mandatory.	Choose BC807-25LT1G for new designs requiring full Pb-free certification traceability.
MMBT807	Same die, identical h_FE binning and ratings, but manufactured by Diodes Inc.; marked "A2" and shipped in same SOT-23 tape-and-reel format.	Drop-in replacement with identical thermal and electrical behavior; validated in same AEC-Q200 stress tests.	Select MMBT807 when dual-sourcing or second-source qualification is required for supply chain resilience.

Compared with BC807-25LT1G and MMBT807, the SBC807-25LT1 offers identical core performance but differs in manufacturer traceability and compliance labeling-critical for automotive PPAP documentation and industrial BOM audits where part origin must be explicitly declared.

Availability

SBC807-25LT1 is available at Aetrix Electronics and suitable for LED driver stages, level-shifting interfaces, high-side load switches, and discrete bias networks requiring stable component supply, consistent h_FE binning, and industrial-grade thermal reliability.

Supply support for SBC807-25LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The BC807 series was designed as a family of robust, cost-optimized general-purpose PNP transistors targeting high-volume consumer, industrial, and automotive auxiliary systems where reliability, consistency, and manufacturability are prioritized over ultra-high-speed or RF performance.

FAQ

What is the maximum continuous collector current rating for the SBC807-25LT1?

The SBC807-25LT1 has a maximum continuous collector current (I_C) rating of −500 mA at T_A = 25°C on FR-5 board. This rating assumes proper PCB copper area and airflow; derating is required above 25°C at 1.8 mW/°C. The SBC807-25LT1 must not be operated beyond this limit in sustained DC or pulsed applications without verifying junction temperature rise using R_JA = 556 °C/W.

Does the SBC807-25LT1 support Pb-free reflow soldering processes?

Yes, the SBC807-25LT1 is qualified for Pb-free reflow soldering per JEDEC J-STD-020. Its Pb-free terminations withstand peak temperatures up to 260°C for 10 seconds. The SBC807-25LT1 data sheet specifies compatibility with standard SnAgCu (SAC305) profiles, and the device carries no moisture sensitivity level (MSL) restriction-no baking required prior to assembly.

How does the h_FE range of the SBC807-25LT1 compare to the BC807-16LT1 and BC807-40LT1 variants?

The SBC807-25LT1 is binned for h_FE = 160–400 at I_C = −100 mA/V_CE = −1.0 V, positioning it between the BC807-16LT1 (100–250) and BC807-40LT1 (250–600). This mid-range gain enables balanced trade-offs: sufficient drive margin for moderate-base-resistor designs without excessive sensitivity to temperature drift. All three share identical package, pinout, and absolute maximum ratings.

Can the SBC807-25LT1 be used in linear amplifier configurations?

Yes, the SBC807-25LT1 supports linear operation with verified f_T = 100 MHz and stable h_FE across I_C = −1 mA to −500 mA. Its V_CE(sat) and V_BE(on) parameters are characterized for both switching and active-region use. When biased in the active region, the SBC807-25LT1 delivers predictable small-signal gain with low harmonic distortion up to 10 MHz, provided junction temperature remains within −55°C to +150°C limits.

What is the thermal resistance of the SBC807-25LT1 on a standard FR-5 PCB?

The SBC807-25LT1 exhibits a junction-to-ambient thermal resistance (R_JA) of 556 °C/W when mounted on a 1.0 × 0.75 × 0.062 inch FR-5 board at T_A = 25°C. This value assumes no additional copper pour or thermal vias. With 1-inch² 2-oz copper pad and 4 thermal vias, R_JA improves to approximately 220 °C/W. The SBC807-25LT1's 225 mW power dissipation rating is derived directly from this R_JA value.

SBC807-25LT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 100mA, 1V

Power - Max:: 300 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SBC807-25LT1 FAQ

1.How can I place an order for SBC807-25LT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SBC807-25LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SBC807-25LT1 reliable?

The price and inventory of SBC807-25LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBC807-25LT1 is usually 5 days.

3.What payment methods are accepted for SBC807-25LT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBC807-25LT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SBC807-25LT1?

SBC807-25LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SBC807-25LT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SBC807-25LT1?

For technical support, including SBC807-25LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBC807-25LT1 requirements.

6.How does Aetrix verify that SBC807-25LT1 is sourced from the original manufacturer or authorized distributors?

All SBC807-25LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBC807-25LT1 meets industry standards.

7.What is the process for return or replacement of SBC807-25LT1?

All SBC807-25LT1 units undergo pre-shipment inspection (PSI). If there is an issue with SBC807-25LT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SBC807-25LT1 part is unused and in its original packaging.

Return procedure for SBC807-25LT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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