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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi SBC847BWT1G-M02

Name: SBC847BWT1G-M02
Brand: onsemi
SKU: SBC847BWT1G-M02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SBC847BWT1G-M02

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: SBC847BWT1G-M02.pdf

Description:: TRANS NPN 45V 0.1A SC70-3

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Product details

Overview

SBC847BWT1G-M02 from onsemi is an NPN general-purpose silicon transistor in SC-70 (SOT-323) package, rated for 45 V V_CEO, 100 mA I_C, and 200 mW P_D, with DC current gain (h_FE) of 200–450 at I_C = 2.0 mA and V_CE = 5.0 V, used in low-power signal amplification and switching circuits in consumer electronics and industrial control interfaces.

For engineers reviewing the SBC847BWT1G-M02 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, package dimensions, and AEC-Q101-compliant automotive suitability - critical for BOM validation, PCB layout, and reliability-critical signal path design.

Technical Context

This device operates as a discrete NPN bipolar junction transistor optimized for linear amplification and digital switching in low-voltage, low-current applications. Its h_FE range (200–450) supports stable biasing across temperature, while V_CE(sat) ≤ 0.6 V at I_C = 10 mA / I_B = 0.5 mA ensures efficient saturation in logic-level drive circuits.

Thermal resistance R_JA = 620 °C/W on FR-5 board defines its power derating envelope, and f_T = 100 MHz enables use in audio-frequency amplifiers and low-speed digital interfaces. It meets AEC-Q101 stress testing requirements and is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum collector-emitter voltage before breakdown; sets safe operating range for 3.3 V/5 V rail applications.
I_C	100 mA - Continuous collector current limit; suitable for driving LEDs, small relays, or logic buffers.
h_FE	200–450 @ I_C = 2.0 mA - High and consistent DC current gain enables predictable base drive sizing.
V_CE(sat)	≤ 0.6 V @ I_C = 10 mA, I_B = 0.5 mA - Low saturation voltage minimizes power loss in switching mode.
f_T	100 MHz - Transition frequency supports audio-band amplification and fast digital edge handling.
P_D	200 mW @ T_A = 25°C - Power dissipation limit governs thermal design on standard FR-5 PCBs.
R_JA	620 °C/W - Junction-to-ambient thermal resistance determines required board copper area for thermal management.

Pinout & Package

SC-70 (SOT-323) surface-mount package with 3-pin configuration, 1.2 mm × 2.1 mm footprint, 0.9 mm height, and gull-wing leads compatible with reflow soldering. Designed for space-constrained PCB layouts requiring low parasitic inductance and high assembly yield.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires ~0.7 V forward bias to initiate conduction; base resistor selection must ensure I_B ≥ I_C/h_FE(min).
2	Emiter	Current return path; connected to ground or low-side reference; forms common-emitter topology with defined input impedance.
3	Collector	Output current path; connects to load or pull-up; voltage swing limited by V_CEO and thermal dissipation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22 standards.
Pb-free, halogen-free, RoHS compliant	Meets global environmental regulations; compatible with lead-free reflow profiles up to 260°C peak.
Low V_CE(sat) and high h_FE	Enables efficient switching with minimal base drive current and reduced conduction losses in battery-powered systems.
SC-70 package	0.65 mm pitch and 1.2 mm × 2.1 mm footprint support high-density routing and automated placement in compact designs.
Wide T_J range (−55°C to +150°C)	Supports operation in harsh environments such as under-hood automotive modules and industrial motor controls.

Applications

Audio Signal Amplification	Microcontroller GPIO Expansion
Use Scenario: Amplifying line-level analog signals in portable audio devices and headset drivers. IC Role / Device Role / Timing Role: NPN transistor configured in common-emitter mode to provide voltage gain with low distortion. Use Value: 100 MHz f_T and 200–450 h_FE enable flat frequency response up to 20 kHz with <1% THD at 1 V_PP output.	Use Scenario: Driving external loads (e.g., LEDs, buzzers, MOSFET gates) from microcontroller I/O pins with limited sink/source capability. IC Role / Device Role / Timing Role: Low-side switch controlled by MCU GPIO, turning on/off loads referenced to V_CC. Use Value: V_CE(sat) ≤ 0.6 V ensures >90% efficiency at 10 mA load current, minimizing MCU port stress and heat generation.
Automotive Sensor Interface	Industrial Level Translation
Use Scenario: Conditioning analog outputs from temperature or pressure sensors in engine control units (ECUs). IC Role / Device Role / Timing Role: Signal buffer and level shifter between sensor output and ADC input, providing isolation and gain stability. Use Value: AEC-Q101 qualification and −55°C to +150°C T_J rating guarantee operation across full automotive ambient range without parameter drift.	Use Scenario: Converting 3.3 V logic signals to 5 V or 12 V levels for legacy industrial controllers and PLC inputs. IC Role / Device Role / Timing Role: Active pull-up or open-collector interface translator enabling interoperability between mixed-voltage subsystems. Use Value: 45 V V_CEO and 100 mA I_C allow direct connection to 12 V rails without external protection components.

Audio Signal Amplification

Microcontroller GPIO Expansion

Use Scenario: Amplifying line-level analog signals in portable audio devices and headset drivers.

IC Role / Device Role / Timing Role: NPN transistor configured in common-emitter mode to provide voltage gain with low distortion.

Use Value: 100 MHz f_T and 200–450 h_FE enable flat frequency response up to 20 kHz with <1% THD at 1 V_PP output.

Use Scenario: Driving external loads (e.g., LEDs, buzzers, MOSFET gates) from microcontroller I/O pins with limited sink/source capability.

IC Role / Device Role / Timing Role: Low-side switch controlled by MCU GPIO, turning on/off loads referenced to V_CC.

Use Value: V_CE(sat) ≤ 0.6 V ensures >90% efficiency at 10 mA load current, minimizing MCU port stress and heat generation.

Automotive Sensor Interface

Industrial Level Translation

Use Scenario: Conditioning analog outputs from temperature or pressure sensors in engine control units (ECUs).

IC Role / Device Role / Timing Role: Signal buffer and level shifter between sensor output and ADC input, providing isolation and gain stability.

Use Value: AEC-Q101 qualification and −55°C to +150°C T_J rating guarantee operation across full automotive ambient range without parameter drift.

Use Scenario: Converting 3.3 V logic signals to 5 V or 12 V levels for legacy industrial controllers and PLC inputs.

IC Role / Device Role / Timing Role: Active pull-up or open-collector interface translator enabling interoperability between mixed-voltage subsystems.

Use Value: 45 V V_CEO and 100 mA I_C allow direct connection to 12 V rails without external protection components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BMTF	Same h_FE range and V_CEO, but in SOT-23 package (larger footprint, higher P_D = 350 mW).	Preferred where higher power handling or legacy SOT-23 tooling exists; not drop-in due to different pinout and size.	Select BC847BMTF only if board layout allows SOT-23 and thermal margin exceeds 200 mW.
MMBT3904LT1G	Lower h_FE (100–300), same V_CEO (40 V), identical SC-70 package and pinout.	Used in cost-sensitive consumer applications where tighter h_FE tolerance is acceptable.	MMBT3904LT1G is a functional alternative with verified SC-70 compatibility but requires recalculating base bias for lower gain.

Compared with SBC847BWT1G-M02, BC847BMTF offers higher power capability in a larger package, while MMBT3904LT1G provides identical form factor with reduced gain consistency - both require validation of bias network and thermal performance in the target application.

Availability

SBC847BWT1G-M02 is available at Aetrix Electronics and suitable for automotive sensor interfaces, microcontroller peripheral drivers, and portable audio signal conditioning requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for SBC847BWT1G-M02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensing, and connectivity solutions.

SBC847BWT1G-M02 belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors designed for reliable, low-cost amplification and switching in automotive, industrial, and consumer applications.

FAQ

What is the maximum collector-emitter voltage rating for SBC847BWT1G-M02?

The maximum collector-emitter voltage (V_CEO) for SBC847BWT1G-M02 is 45 V, as specified in the Absolute Maximum Ratings table. This rating applies at T_A = 25°C with no secondary breakdown limitations. Exceeding this voltage risks irreversible avalanche breakdown. The SBC847BWT1G-M02 must be operated within this limit in all circuit configurations, including inductive load switching with flyback voltage spikes.

Is SBC847BWT1G-M02 suitable for automotive applications?

Yes, SBC847BWT1G-M02 is AEC-Q101 qualified and PPAP capable, with S-prefix marking indicating automotive-specific site and process controls. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and electrostatic discharge per JESD22 standards. The SBC847BWT1G-M02 is approved for use in non-safety-critical automotive subsystems including body control modules, HVAC actuators, and lighting drivers.

What is the DC current gain (h_FE) range of SBC847BWT1G-M02 at typical operating conditions?

The DC current gain (h_FE) of SBC847BWT1G-M02 is specified as 200–450 when tested at I_C = 2.0 mA and V_CE = 5.0 V, TA = 25°C. This range reflects the B-grade variant within the BC847 series. Gain remains stable across −55°C to +125°C junction temperatures, with typical variation of ±15% over that range. The SBC847BWT1G-M02 data sheet confirms this h_FE binning in the Electrical Characteristics table.

Does SBC847BWT1G-M02 have a Pb-free and RoHS-compliant package?

Yes, SBC847BWT1G-M02 uses a Pb-free, halogen-free, and RoHS-compliant SC-70 (SOT-323) package, marked with "M" to indicate Pb-free construction. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is qualified for standard lead-free reflow profiles with peak temperature up to 260°C. The SBC847BWT1G-M02 complies fully with EU RoHS Directive 2011/65/EU and China RoHS.

What is the thermal resistance (R_JA) of SBC847BWT1G-M02 on a standard FR-5 board?

The junction-to-ambient thermal resistance (R_JA) of SBC847BWT1G-M02 is 620 °C/W when mounted on a 1.0 × 0.75 × 0.062 inch FR-5 board at T_A = 25°C. This value assumes no additional copper pour or thermal vias. For continuous operation at 100 mA, junction temperature rise is calculated as ΔT = P_D × R_JA; at 200 mW dissipation, ΔT = 124°C, limiting ambient use to ≤26°C for T_J ≤ 150°C. The SBC847BWT1G-M02 thermal performance is validated per JEDEC JESD51-2.

SBC847BWT1G-M02 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 310 mW

Frequency - Transition:: 300MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3 (SOT323)

SBC847BWT1G-M02 FAQ

1.How can I place an order for SBC847BWT1G-M02 through Aetrix?

Please submit a Request for Quotation (RFQ) for SBC847BWT1G-M02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SBC847BWT1G-M02 reliable?

The price and inventory of SBC847BWT1G-M02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBC847BWT1G-M02 is usually 5 days.

3.What payment methods are accepted for SBC847BWT1G-M02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBC847BWT1G-M02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SBC847BWT1G-M02?

SBC847BWT1G-M02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SBC847BWT1G-M02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SBC847BWT1G-M02?

For technical support, including SBC847BWT1G-M02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBC847BWT1G-M02 requirements.

6.How does Aetrix verify that SBC847BWT1G-M02 is sourced from the original manufacturer or authorized distributors?

All SBC847BWT1G-M02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBC847BWT1G-M02 meets industry standards.

7.What is the process for return or replacement of SBC847BWT1G-M02?

All SBC847BWT1G-M02 units undergo pre-shipment inspection (PSI). If there is an issue with SBC847BWT1G-M02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SBC847BWT1G-M02 part is unused and in its original packaging.

Return procedure for SBC847BWT1G-M02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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