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onsemi SBC847CWT3G
- Part No.:
- SBC847CWT3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
SBC847CWT3G.pdf
- Description:
- TRANS NPN 45V 0.1A SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,440
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Product details
Overview
SBC847CWT3G from onsemi is an NPN silicon general-purpose transistor in SC-70 (SOT-323) package, rated for 45 V VCEO, 100 mA IC, and 200 mW power dissipation, with DC current gain (hFE) of 420–800 at IC = 2.0 mA, used in low-power amplification and switching circuits in consumer and industrial signal conditioning modules.
For engineers reviewing the SBC847CWT3G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, AEC-Q101 qualification status, SC-70 package dimensions, and validated alternative transistors for discrete BJT selection in space-constrained PCB designs.
Technical Context
This device operates as a single NPN bipolar junction transistor optimized for linear amplification and saturated switching. Its hFE range (420–800) enables precise biasing in low-noise preamplifier stages, while VCE(sat) ≤ 0.25 V at IC = 10 mA / IB = 0.5 mA ensures minimal conduction loss in digital interface drivers.
Thermal resistance RJA = 620 °C/W on FR-5 board and TJ range of −55 °C to +150 °C support operation in automotive cabin modules and industrial sensor nodes. The SC-70 package's 1.25 mm × 2.1 mm footprint meets IPC-7351B standard for high-density surface-mount assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in 24 V rail interfaces. |
| IC (max) | 100 mA - Continuous collector current limit; supports load switching up to ~50 mW in small-signal logic buffers. |
| hFE | 420–800 @ IC = 2.0 mA - High DC gain enables stable biasing with high-value base resistors, reducing PCB component count. |
| VCE(sat) | ≤ 0.25 V @ IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss in ON-state switching applications. |
| fT | 100 MHz - Unity-gain bandwidth allows use in audio-frequency amplifiers and low-speed digital signal conditioning up to ~10 MHz. |
| PD | 200 mW @ TA = 25 °C - Power dissipation limit constrains continuous operation to ambient temperatures ≤ 85 °C without heatsinking. |
| Cobo | 4.5 pF @ VCB = 10 V - Low output capacitance preserves signal integrity in high-impedance amplifier feedback networks. |
Pinout & Package
SC-70 (SOT-323) package: 1.25 mm × 2.1 mm × 0.95 mm body, 0.65 mm lead pitch, JEDEC MO-203-DA compliant, Pb-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control electrode; requires current-limited drive (e.g., 10–100 kΩ series resistor) to achieve target hFE-based collector current. |
| 2 | Emiter | Reference node for bias network; connected to ground or common emitter point in CE amplifier configurations. |
| 3 | Collector | Output terminal; carries amplified/saturated load current; routed to VCC via pull-up resistor in switching mode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements; supports under-hood and infotainment module deployment. |
| Pb-free, Halogen-free/BFR-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; eliminates hazardous substance risks in manufacturing. |
| Low thermal resistance | RJA = 620 °C/W enables operation up to +85 °C ambient without derating when mounted on standard FR-5 PCB. |
| High hFE consistency | Guaranteed 420–800 range at IC = 2.0 mA reduces need for individual transistor binning in production assemblies. |
| Small outline package | SC-70 footprint saves >60% board area vs. SOT-23; compatible with automated pick-and-place equipment using 0.65 mm pitch nozzles. |
Applications
| Audio Pre-amplifier Stage | Microcontroller GPIO Driver |
|---|---|
Use Scenario: Amplifying weak microphone signals (1–10 mV) before ADC sampling in portable voice recorders. IC Role / Device Role / Timing Role: NPN common-emitter amplifier with fixed bias network providing 20–40 dB voltage gain. Use Value: High hFE (420–800) enables stable gain with minimal base current draw, extending battery life in coin-cell-powered devices. |
Use Scenario: Driving LED indicators or small relays from 3.3 V microcontroller outputs with limited sink/source capability. IC Role / Device Role / Timing Role: Saturated switch configured in common-emitter topology with base resistor limiting IB to 0.5 mA. Use Value: VCE(sat) ≤ 0.25 V ensures <10 mW power loss per channel, preventing thermal issues in multi-LED status panels. |
| Automotive Cabin Sensor Interface | Industrial Current Mirror Reference |
Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., thermistor voltage dividers) in HVAC control modules. IC Role / Device Role / Timing Role: Emitter-follower buffer isolating sensitive sensor circuitry from downstream ADC input impedance. Use Value: AEC-Q101 qualification guarantees reliability across −40 °C to +105 °C ambient, meeting automotive environmental requirements. |
Use Scenario: Building matched current sources in precision analog front-ends for pressure or flow transducers. IC Role / Device Role / Timing Role: One half of a discrete current mirror pair where hFE matching enables <5% current error over temperature. Use Value: Tight hFE distribution (420–800) and low Cobo (4.5 pF) minimize dynamic mismatch and settling time in closed-loop systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847C,215 (Nexperia) | Same SC-70 package, identical VCEO = 45 V and hFE = 420–800, but RJA = 650 °C/W (slightly higher thermal resistance). | Valid for same amplifier/switch roles, but requires marginally lower ambient temperature or reduced duty cycle in thermally constrained layouts. | Select when sourcing from Nexperia's long-term supply program; verify thermal performance in final layout simulation. |
| MMBT4401LT1G (onsemi) | Higher VCEO = 40 V (vs. 45 V), same IC = 600 mA (but derated to 100 mA in SC-70), hFE = 100–300 - narrower, lower gain range. | Suitable for higher-current switching but less ideal for low-noise amplification due to lower and less consistent hFE. | Prefer for cost-sensitive high-volume switching where gain stability is secondary; avoid in precision analog gain stages. |
Compared with BC847C,215, SBC847CWT3G offers better thermal performance (RJA = 620 vs. 650 °C/W); versus MMBT4401LT1G, it delivers superior hFE consistency and noise figure for signal amplification, though both share SC-70 compatibility.
Availability
SBC847CWT3G is available at Aetrix Electronics and suitable for automotive cabin sensors, portable audio pre-amplifiers, microcontroller GPIO expansion, and industrial current mirror references requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SBC847CWT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
SBC847CWT3G belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors designed for low-power surface-mount amplification and switching in space-constrained, thermally demanding environments.
FAQ
What is the maximum operating temperature for SBC847CWT3G?
The SBC847CWT3G has a junction temperature range of −55 °C to +150 °C and a storage temperature range of −55 °C to +150 °C. When mounted on an FR-5 board at 25 °C ambient, its thermal resistance is 620 °C/W, meaning it reaches thermal limit at approximately 85 °C ambient under full 200 mW dissipation. Derating is required above that ambient temperature.
Is SBC847CWT3G pin-compatible with other BC847 variants?
Yes, SBC847CWT3G uses the SC-70 (SOT-323) package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector - identical pinout to all BC846/BC847/BC848 variants in the same package. However, electrical differences exist: SBC847CWT3G has hFE = 420–800, while BC847A and BC847B offer lower gain ranges (110–220 and 200–450 respectively), requiring circuit validation if substituted.
Does SBC847CWT3G meet automotive qualification standards?
Yes, SBC847CWT3G is AEC-Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet. This certification covers stress tests including HTOL, temperature cycling, HAST, and mechanical shock, validating its suitability for automotive interior electronics such as climate control sensors and infotainment system interfaces.
What is the typical noise figure of SBC847CWT3G and where is it specified?
The SBC847CWT3G has a noise figure of 10 dB at IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, and BW = 200 Hz, as stated in the "Electrical Characteristics" table on page 2 of the onsemi datasheet. This makes it suitable for low-frequency pre-amplifier stages where signal-to-noise ratio is critical.
How does the hFE variation affect bias design for SBC847CWT3G?
The SBC847CWT3G specifies hFE = 420–800 at IC = 2.0 mA and VCE = 5.0 V. To ensure stable DC operating point across unit-to-unit variation, bias networks should be designed using emitter degeneration (e.g., emitter resistor) and voltage-divider base bias - avoiding fixed-base-current topologies that would cause >2× collector current spread across the hFE range.
SBC847CWT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 420 @ 2mA, 5V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
SBC847CWT3G FAQ
1.How can I place an order for SBC847CWT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for SBC847CWT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SBC847CWT3G reliable?
The price and inventory of SBC847CWT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBC847CWT3G is usually 5 days.
3.What payment methods are accepted for SBC847CWT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBC847CWT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SBC847CWT3G?
SBC847CWT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SBC847CWT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SBC847CWT3G?
For technical support, including SBC847CWT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBC847CWT3G requirements.
6.How does Aetrix verify that SBC847CWT3G is sourced from the original manufacturer or authorized distributors?
All SBC847CWT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBC847CWT3G meets industry standards.
7.What is the process for return or replacement of SBC847CWT3G?
All SBC847CWT3G units undergo pre-shipment inspection (PSI). If there is an issue with SBC847CWT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SBC847CWT3G part is unused and in its original packaging.
Return procedure for SBC847CWT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SBC847CWT3G Tags
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