Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SBLB25L30CT-E3/45

Part No.:
SBLB25L30CT-E3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSBLB25L30CT-E3/45.pdf
Description:
DIODE ARR SCHOTTKY 30V TO263AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,077

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SBLB25L30CT-E3/45 from Vishay General Semiconductor is a dual common-cathode Schottky rectifier in D2PAK (TO-263AB) package, rated for 30 V reverse voltage, 2 × 12.5 A average forward current per diode, and 0.39 V forward voltage at 12.5 A and 125 °C - optimized for high-efficiency DC/DC converters and OR-ing applications in power-dense industrial and telecom systems.

For engineers reviewing the SBLB25L30CT-E3/45 datasheet, SBLB25L30CT-E3/45 pinout, SBLB25L30CT-E3/45 application, or SBLB25L30CT-E3/45 equivalent, key selection criteria include low VF stability across temperature, 180 A surge capability, thermal resistance of 1.5 °C/W per diode, AEC-Q101 qualification eligibility, and D2PAK mounting compatibility with heatsink-integrated PCB layouts.

Technical Context

This dual Schottky rectifier integrates two independent anodes sharing a common cathode terminal, enabling synchronous OR-ing or dual-path freewheeling in compact 12 V/5 V intermediate bus architectures. Its low 0.39 V VF at 125 °C directly reduces conduction loss in high-current, thermally constrained designs.

The device operates up to 150 °C junction temperature with 1.5 °C/W typical RθJC per diode, supports 8.3 ms single half-sine IFSM surges to 180 A, and maintains <100 µA reverse leakage at 125 °C - critical for maintaining efficiency in high-frequency switching topologies above 300 kHz.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 30 V - blocks up to 30 V reverse voltage per diode without breakdown; suitable for 12 V and 24 V input rails with margin.
IF(AV) per diode 12.5 A at TC = 95 °C - enables 25 A total device current handling with shared thermal path in D2PAK package.
VF @ 12.5 A, 125 °C 0.39 V - minimizes conduction loss (≈4.9 W per diode at full load), improving system efficiency in high-current DC/DC stages.
IFSM 180 A - withstands short-duration inrush and fault currents in power supply startup and transient events.
RθJC per diode 1.5 °C/W - enables direct heatsink coupling via exposed cathode pad; supports >75 W dissipation with 112.5 °C ΔT at 12.5 A.
TJ max. 150 °C - allows operation in sealed enclosures or high-ambient environments without derating below full current rating.

Pinout & Package

D2PAK (TO-263AB) surface-mount package with isolated heatsink tab (cathode-connected), matte tin-plated leads, RoHS-compliant, halogen-free (M3 suffix), and qualified per JESD 201 Class 1A whisker test.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Anode 1 Input terminal for first diode path; electrically isolated from Pin 2 and heatsink tab.
Pin 2 Anode 2 Input terminal for second diode path; independent of Pin 1 but shares cathode (tab).
Heatsink Tab (Pin 3 / K) Common Cathode Primary thermal and electrical return node; must be soldered to large copper pour or heatsink for RθJC = 1.5 °C/W performance.

Key Features

Feature Design Value
Very low forward voltage drop 0.39 V at 12.5 A and 125 °C - reduces power loss by ≥25 % vs. standard Schottkys with VF > 0.5 V under same conditions.
High forward surge capability 180 A IFSM (8.3 ms) - sustains repeated inrush events in hot-swap and redundant power modules without degradation.
Common cathode dual configuration Single-package dual-diode topology - eliminates interconnect inductance between cathodes, improving OR-ing transient response and layout compactness.
Thermally optimized D2PAK package 1.5 °C/W RθJC per diode with exposed cathode tab - delivers 2× thermal performance vs. TO-220AB variants (RθJC = 4.0 °C/W).

Applications

Server OR-ing Circuit Industrial DC/DC Converter

Use Scenario: Dual 12 V power supplies feeding a common load with automatic redundancy switching.

IC Role / Device Role / Timing Role: OR-ing diode providing reverse-current blocking and seamless source switchover.

Use Value: 0.39 V VF minimizes voltage drop and heat generation during steady-state operation, extending MOSFET lifetime in hybrid OR-ing designs.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V DC/DC converters for factory automation controllers.

IC Role / Device Role / Timing Role: Freewheeling rectifier conducting high-frequency inductor current during low-side switch off-time.

Use Value: 180 A surge rating handles peak inductor current transients; 150 °C max junction temperature supports operation in sealed control cabinets.

Telecom Power Shelf Automotive ADAS Power Module

Use Scenario: Intermediate bus protection in multi-rail telecom shelf with distributed 24 V/12 V outputs.

IC Role / Device Role / Timing Role: Polarity protection and backfeed prevention on auxiliary power rails.

Use Value: Common-cathode configuration simplifies PCB routing and reduces trace inductance versus discrete diode pairs.

Use Scenario: Input rectification and reverse-polarity protection in 12 V power modules for radar and camera ECUs.

IC Role / Device Role / Timing Role: High-reliability rectifier meeting AEC-Q101 requirements when ordered as HM3 variant.

Use Value: Halogen-free M3 construction and JESD 201 Class 1A whisker resistance ensure long-term reliability in vibration-prone automotive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay SBL25L30CT-E3/45 TO-220AB package; RθJC = 4.0 °C/W per diode; no isolation voltage rating; commercial grade only. Better suited for prototyping or low-volume through-hole assembly; higher thermal resistance limits power density. Select when manual soldering, legacy footprint compatibility, or lower cost per unit outweighs thermal performance needs.
Vishay SBLF25L30CT-E3/45 ITO-220AB package; RθJC = 4.0 °C/W; 1500 V isolation from terminal to heatsink; AEC-Q101 available with HE3 suffix. Enables insulated mounting in safety-critical AC/DC front-ends or isolated DC/DC where creepage/clearance matters. Select when galvanic isolation or automotive qualification is mandatory, and D2PAK thermal advantage is secondary.

Compared with SBL25L30CT-E3/45 and SBLF25L30CT-E3/45, the SBLB25L30CT-E3/45 delivers superior thermal performance (1.5 vs. 4.0 °C/W) and higher power density in surface-mount designs, making it optimal for space-constrained, high-efficiency applications where heatsink coupling is feasible.

Availability

SBLB25L30CT-E3/45 is available at Aetrix Electronics and suitable for server OR-ing circuits, industrial DC/DC converters, and telecom power shelves requiring stable component supply, consistent D2PAK tape-and-reel delivery, and long-term production support.

Supply support for SBLB25L30CT-E3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The SBLB25L30CT-E3/45 belongs to Vishay's SBLx25L30CT family of low-VF dual Schottky rectifiers, engineered specifically for high-current, high-frequency power conversion in space- and thermally-constrained industrial and communications equipment.

FAQ

What is the maximum junction temperature rating for the SBLB25L30CT-E3/45?

The SBLB25L30CT-E3/45 has a maximum operating junction temperature of +150 °C, allowing continuous operation in high-ambient environments such as enclosed power supplies or industrial control cabinets without forced air cooling. This rating is confirmed in the Vishay datasheet Document Number 88731, Section "Maximum Ratings".

Is the SBLB25L30CT-E3/45 RoHS-compliant and halogen-free?

Yes, the SBLB25L30CT-E3/45 carries the M3 suffix, indicating full RoHS compliance and halogen-free construction per Vishay's material specifications. It also meets JESD 201 Class 1A whisker testing requirements, ensuring long-term solder joint reliability in thermal cycling applications.

What is the thermal resistance from junction to case for each diode in the SBLB25L30CT-E3/45?

The SBLB25L30CT-E3/45 has a typical thermal resistance of 1.5 °C/W per diode from junction to case (RθJC), measured with the cathode tab properly soldered to a thermal pad. This value is significantly lower than the TO-220AB (4.0 °C/W) and ITO-220AB (4.0 °C/W) variants in the same family.

Does the SBLB25L30CT-E3/45 support AEC-Q101 qualification?

The base SBLB25L30CT-E3/45 is not AEC-Q101 qualified; however, the functionally identical SBLB25L30CTHM3/I variant is AEC-Q101 qualified for automotive applications. Both share the same D2PAK package, electrical specs, and thermal performance - only the qualification and packaging differ.

What is the forward voltage drop of the SBLB25L30CT-E3/45 at 12.5 A and 25 °C?

At 12.5 A and 25 °C, the SBLB25L30CT-E3/45 exhibits a maximum instantaneous forward voltage of 0.49 V per diode, as specified in the "Electrical Characteristics" table of Vishay Document Number 88731. This value increases to 0.39 V at 125 °C due to Schottky barrier physics.

SBLB25L30CT-E3/45 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io) (per Diode):
12.5A
Voltage - Forward (Vf) (Max) @ If:
490 mV @ 12.5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
900 µA @ 30 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D2PAK)

SBLB25L30CT-E3/45 FAQ

1.How can I place an order for SBLB25L30CT-E3/45 through Aetrix?

Please submit a Request for Quotation (RFQ) for SBLB25L30CT-E3/45 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SBLB25L30CT-E3/45 reliable?

The price and inventory of SBLB25L30CT-E3/45 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBLB25L30CT-E3/45 is usually 5 days.

3.What payment methods are accepted for SBLB25L30CT-E3/45?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBLB25L30CT-E3/45 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SBLB25L30CT-E3/45?

SBLB25L30CT-E3/45 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SBLB25L30CT-E3/45 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SBLB25L30CT-E3/45?

For technical support, including SBLB25L30CT-E3/45 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBLB25L30CT-E3/45 requirements.

6.How does Aetrix verify that SBLB25L30CT-E3/45 is sourced from the original manufacturer or authorized distributors?

All SBLB25L30CT-E3/45 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBLB25L30CT-E3/45 meets industry standards.

7.What is the process for return or replacement of SBLB25L30CT-E3/45?

All SBLB25L30CT-E3/45 units undergo pre-shipment inspection (PSI). If there is an issue with SBLB25L30CT-E3/45, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SBLB25L30CT-E3/45 part is unused and in its original packaging.

Return procedure for SBLB25L30CT-E3/45:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SBLB25L30CT-E3/45 Tags

  • SBLB25L30CT-E3/45
  • SBLB25L30CT-E3/45 PDF
  • SBLB25L30CT-E3/45 Datasheet
  • SBLB25L30CT-E3/45 Specifications
  • SBLB25L30CT-E3/45 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SBLB25L30CT-E3/45
  • Buy SBLB25L30CT-E3/45
  • SBLB25L30CT-E3/45 Price
  • SBLB25L30CT-E3/45 Distributor
  • SBLB25L30CT-E3/45 Supplier
  • SBLB25L30CT-E3/45 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER