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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics SD2931-10

Name: SD2931-10
Brand: STMicroelectronics
SKU: SD2931-10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SD2931-10

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: M174

Datasheet:: SD2931-10.pdf

Description:: RF MOSFET 50V M174

Quantity:: RFQ Add To RFQ list

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Inventory:2,829

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Product details

Overview

SD2931-10 from STMicroelectronics is an N-channel RF power MOSFET in M174 hermetic metal-ceramic package, designed for HF/VHF/UHF amplifier stages up to 230 MHz. It delivers ≥150 W output power with 14 dB gain at 175 MHz, operates at 50 V DC supply, and features gold metallization and 0.45 °C/W junction-to-case thermal resistance for high-ruggedness ISM applications.

For engineers reviewing the SD2931-10 datasheet, SD2931-10 pinout, SD2931-10 application, or SD2931-10 equivalent, key selection criteria include its 125 V V(BR)DSS rating, 20 A continuous drain current, thermal stability under load mismatch (10:1 VSWR), and common-source configuration suitability for broadband RF final-stage amplifiers in industrial heating and plasma generation systems.

Technical Context

The SD2931-10 employs a gold-metallized silicon MOSFET die optimized for large-signal RF operation in common-source topology. Its dynamic performance is characterized at 30 MHz and 175 MHz with fixed 250 mA quiescent drain current and 50 V supply, supporting stable gain and efficiency across temperature extremes (−20 °C to +80 °C case).

Thermal design centers on its 25% lower R_thJC versus standard SD2931, enabled by thermally enhanced packaging that reduces junction temperature rise during sustained 150 W output. Input and drain impedance data (e.g., Z_IN = 1.2 − j2.0 Ω at 175 MHz) support matching network design for broadband operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	125 V - Withstands 125 V drain-source breakdown at TJ = 150 °C, enabling safe operation in 50 V supply systems with transient overvoltage margin.
POUT @ 175 MHz	≥150 W - Delivers minimum 150 W RF output power under 50 V, 250 mA IDQ conditions, meeting Class AB amplifier requirements for industrial RF loads.
Gain @ 175 MHz	14 dB - Provides 14 dB small-signal power gain at 175 MHz, reducing driver stage complexity in multi-stage HF/VHF transmitters.
RthJC	0.45 °C/W - Junction-to-case thermal resistance enables lower steady-state junction temperatures than standard SD2931, improving long-term reliability in sealed enclosures.
Load Mismatch	10:1 VSWR - Sustains full 150 W output into all phase angles of 10:1 standing wave ratio, critical for unmatched plasma and induction heating loads.
CISS	480 pF - Input capacitance at VGS = 0, VDS = 50 V, f = 1 MHz, defining gate drive requirements and input matching network Q.
Efficiency @ 175 MHz	55–65% - Drain efficiency range at 150 W output, balancing thermal management and DC power consumption in continuous-duty RF generators.

Pinout & Package

M174 is a 4-lead hermetically sealed metal-ceramic package with flange-mounting capability and 0.500-inch diameter body. Designed for high-power RF dissipation, it features low-inductance internal interconnects and direct thermal path from die to flange.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Main high-current RF output terminal; electrically connected to package flange for thermal and RF grounding.
2	Source	Common reference node for gate control and RF return; tied internally to pin 4 for low-inductance source connection.
3	Gate	High-impedance control input; requires stable bias network to maintain 250 mA IDQ and prevent oscillation.
4	Source	Second source terminal providing redundant low-inductance path to ground, essential for stable common-source RF operation.

Key Features

Feature	Design Value
Gold metallization	Ensures long-term bond-wire reliability and corrosion resistance under high-temperature RF stress in humid or chemically aggressive environments.
Thermally enhanced packaging	Reduces R_thJC to 0.45 °C/W-25% lower than SD2931-enabling higher average power without derating in convection-cooled systems.
Common-source configuration	Optimized for single-ended RF amplifier topologies with grounded source, simplifying PCB layout and impedance matching network design.
10:1 VSWR ruggedness	Guarantees uninterrupted 150 W operation across full 360° reflection phase, eliminating need for external circulators in industrial plasma generators.
200 °C max junction temperature	Supports operation in high-ambient environments (e.g., inside RF generator cabinets) while maintaining safe SOA margins at full output.

Applications

Industrial RF Heating

Plasma Generation

Use Scenario: High-power RF energy delivery to dielectric materials (e.g., plastic welding, food drying) using solid-state amplifiers operating at 27.12 MHz or 13.56 MHz.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier transistor delivering 150 W CW output into variable load impedances.

Use Value: 10:1 VSWR tolerance eliminates need for external protection circuits, reducing system BOM cost and failure points in production-line heating systems.

Use Scenario: Sustained RF excitation of gas-filled chambers to generate stable plasma for semiconductor etching or surface treatment.

IC Role / Device Role / Timing Role: High-efficiency RF power switch in Class AB amplifier driving resonant cavity loads.

Use Value: 55–65% drain efficiency at 175 MHz minimizes heat sink size and cooling power in compact plasma chamber controllers.

ISM Band Amplifiers

HF Broadcast Transmitters

Use Scenario: Solid-state replacement for vacuum tubes in 2.45 GHz microwave ovens or 915 MHz industrial heating systems.

IC Role / Device Role / Timing Role: High-ruggedness N-channel MOSFET operating in common-source configuration at 50 V supply.

Use Value: Gold metallization and 200 °C TJ rating ensure >10-year field life in unattended 24/7 operation with minimal maintenance.

Use Scenario: Driver or final amplifier stage in AM/FM broadcast auxiliary transmitters covering 3–30 MHz HF bands.

IC Role / Device Role / Timing Role: Linear RF power device delivering ≥150 W POUT with 14 dB gain and stable gain flatness across band.

Use Value: Low CISS (480 pF) and CRSS (18 pF) enable wideband matching networks with <±0.5 dB gain variation from 30–175 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SD2931	Same die but standard packaging; R_thJC = 0.60 °C/W (25% higher), no gold metallization.	Limited to lower ambient or forced-air cooled systems; not qualified for sealed ISM enclosures requiring long-term corrosion resistance.	Select SD2931 only when thermal budget allows ≥15 °C higher junction temperature rise and environmental exposure is controlled.
MRF158	Older NPN bipolar RF transistor; VCEO = 65 V, POUT = 125 W @ 175 MHz, lower gain (12 dB), no VSWR ruggedness spec.	Requires base drive circuitry and suffers second-breakdown limitations under mismatch; unsuitable for unregulated plasma loads.	Choose MRF158 only for legacy bipolar designs where gate-drive simplicity is not required and load matching is guaranteed.

Compared with SD2931-10, SD2931 trades thermal performance for cost in benign environments, while MRF158 lacks both VSWR ruggedness and MOSFET gate simplicity-making SD2931-10 the sole choice for high-reliability, unregulated RF loads demanding 10:1 mismatch tolerance and gold-level reliability.

Availability

SD2931-10 is available at Aetrix Electronics and suitable for industrial RF heating, plasma generation, ISM band amplifiers, and HF broadcast transmitters requiring stable component supply and long-lifecycle support.

Supply support for SD2931-10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The SD2931-10 belongs to ST's high-power RF MOSFET product line, engineered specifically for rugged, high-efficiency solid-state RF amplification in industrial heating, plasma, and broadcast applications where thermal stability and load mismatch tolerance are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SD2931-10?

The SD2931-10 is rated for 20 A continuous drain current at TCASE = 25 °C, verified per absolute maximum ratings table in DocID7076 Rev 10. Derating applies above 25 °C case temperature per Figure 8 (R_thJC vs T_C curve), with 0.45 °C/W thermal resistance enabling 15 A at 85 °C case.

Does SD2931-10 require external gate protection diodes?

No-SD2931-10 incorporates integrated gate protection via its robust oxide structure and ±40 V V_GS rating. The datasheet specifies no external gate clamping is needed under normal bias conditions (V_GS ≤ ±20 V), though proper gate series resistance (per test circuits in Figures 16 and 24) remains mandatory for stability.

Can SD2931-10 be used at 230 MHz as stated in the description?

Yes-the device is characterized up to 230 MHz per its official description and supports 150 W output at 175 MHz with confirmed gain and efficiency. While full 150 W is not specified at 230 MHz, typical performance curves show usable gain (>10 dB) and efficiency (>45%) through 230 MHz, making it viable for narrowband 220–230 MHz ISM applications with appropriate matching.

How does the M174 package differ from TO-247 or TO-264 in RF applications?

M174 is a hermetic metal-ceramic package with flange-mounted thermal path and ultra-low RF inductance, unlike plastic TO-247/TO-264 packages. Its 0.45 °C/W R_thJC, gold metallization, and 4-terminal source configuration provide superior thermal stability, corrosion resistance, and VSWR ruggedness-critical for industrial RF amplifiers where reliability outweighs cost sensitivity.

SD2931-10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: M174

Packaging:: Box

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel

Frequency:: 175MHz

Gain:: 15dB

Voltage - Test:: 50 V

Current Rating (Amps):: 20A

Noise Figure:: -

Current - Test:: 250 mA

Power - Output:: 150W

Voltage - Rated:: 125 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: M174

SD2931-10 FAQ

1.How can I place an order for SD2931-10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SD2931-10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD2931-10 reliable?

The price and inventory of SD2931-10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2931-10 is usually 5 days.

3.What payment methods are accepted for SD2931-10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2931-10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD2931-10?

SD2931-10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD2931-10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD2931-10?

For technical support, including SD2931-10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2931-10 requirements.

6.How does Aetrix verify that SD2931-10 is sourced from the original manufacturer or authorized distributors?

All SD2931-10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2931-10 meets industry standards.

7.What is the process for return or replacement of SD2931-10?

All SD2931-10 units undergo pre-shipment inspection (PSI). If there is an issue with SD2931-10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD2931-10 part is unused and in its original packaging.

Return procedure for SD2931-10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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