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STMicroelectronics SD2931-10W
- Part No.:
- SD2931-10W
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M174
- Datasheet:
-
SD2931-10W.pdf
- Description:
- RF MOSFET 50V M174
- Quantity:
- Payment:
- Shipping:
Inventory:4,900
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Product details
Overview
SD2931-10W from STMicroelectronics is an N-channel enhancement-mode RF power MOSFET in M174 hermetic metal-ceramic package, designed for HF/VHF/UHF broadband amplifier stages up to 230 MHz. It delivers ≥150 W output power with 14 dB gain at 175 MHz under 50 V DC supply and 250 mA quiescent drain current, featuring gold metallization and 0.45 °C/W junction-to-case thermal resistance for high-ruggedness ISM applications.
For engineers reviewing the SD2931-10W datasheet, SD2931-10W pinout, SD2931-10W application, or SD2931-10W equivalent, key selection criteria include its 125 V V(BR)DSS rating, 20 A continuous drain current capability, 55–65% drain efficiency at 175 MHz, and thermal robustness in high-VSWR (10:1) load mismatch conditions.
Technical Context
This device operates in common-source configuration with gate-controlled RF amplification. Its static characteristics include 2.0–3.7 V VGS(Q) sorted variants (per Table 6), 3.0 V RDS(on) at 10 A, and low capacitance profile (CISS = 480 pF, CRSS = 18 pF @ 1 MHz), enabling stable broadband matching across 30–175 MHz.
Dynamically, it sustains 150 W POUT with 14 dB GPS at 175 MHz and achieves 29 dB power gain at 30 MHz. Transient thermal impedance modeling confirms suitability for pulsed RF operation, while the M174 package's low RthJC enables sustained high-power CW operation without derating below 85 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 125 V - Withstands 50 V DC supply with 2.5× safety margin against voltage transients in RF final stages. |
| POUT @ 175 MHz | ≥150 W - Delivers full industrial-grade RF output power in ISM band amplifiers without external combiners. |
| GPS @ 175 MHz | 14 dB - Enables single-stage amplification from driver-level input (e.g., 2.5 W → 150 W), reducing system complexity. |
| RthJC | 0.45 °C/W - 25% lower than SD2931 baseline, allowing 30 °C lower junction temperature at same power dissipation. |
| Load Mismatch | 10:1 VSWR - Ruggedized for uncontrolled antenna environments (e.g., plasma generators, RF heating) without failure. |
| ID max | 20 A - Supports peak current demands during modulation peaks in AM/SSB broadcast and industrial RF loads. |
| CISS / CRSS | 480 pF / 18 pF - Low feedback capacitance ensures unconditional stability in wideband Class AB designs without neutralization. |
Pinout & Package
The SD2931-10W uses the M174 hermetically sealed metal-ceramic package (0.500" diameter, 4-lead, flanged), optimized for RF grounding and thermal conduction via baseplate mounting. Its mechanical dimensions comply with ST's ECOPACK® environmental specifications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | RF Power Output Node | Connected to output matching network and heat sink; carries full RF current and DC bias; requires low-inductance ground return path. |
| 2. Source | Common Reference & RF Ground | Dual-function terminal: provides DC return path and RF reference plane; must be bonded directly to ground plane for stability. |
| 3. Gate | RF Input Control Terminal | High-impedance control node requiring ESD protection and precise impedance matching (ZIN = 1.2 – j2.0 Ω @ 175 MHz). |
| 4. Source | Secondary Source Connection | Redundant source bond for improved current sharing and reduced parasitic inductance in high-frequency operation. |
Key Features
| Feature | Design Value |
|---|---|
| Gold metallization | Prevents intermetallic degradation at >150 °C junction temperatures, ensuring >10-year reliability in continuous RF heating systems. |
| Thermally enhanced packaging | M174 baseplate enables direct copper-to-copper thermal interface, reducing thermal resistance by 25% vs. standard SD2931. |
| Common-source configuration | Enables standard push-pull or balanced amplifier topologies without additional level-shifting circuitry. |
| 175 MHz performance validated | Guaranteed 150 W / 14 dB / 60% efficiency at 175 MHz per production test circuit (Figure 16), not extrapolated. |
| VGS-sorted variants | Nine alpha-coded bins (A–S) allow precise gate threshold matching for paralleled or push-pull configurations. |
Applications
| Industrial RF Heating | Broadcast Transmitters |
|---|---|
|
Use Scenario: High-power RF energy delivery into plasma chambers or induction coils operating at 13.56 MHz or 27.12 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in Class AB linear topology driving fixed-tuned LC tank circuits. Use Value: 10:1 VSWR tolerance prevents shutdown during arc events; 0.45 °C/W RthJC maintains <150 °C junction temp under 100% duty cycle. |
Use Scenario: Medium-wave AM broadcast transmitter final amplifier stage covering 530–1710 kHz. IC Role / Device Role / Timing Role: Single-ended RF power device in broadband tuned amplifier delivering 150 W into 50 Ω load. Use Value: 14 dB small-signal gain eliminates need for intermediate driver stage; gold metallization resists corrosion in humid transmitter sites. |
| ISM Band Amplifiers | Medical Diathermy Systems |
|
Use Scenario: 2.45 GHz ISM band signal generation using harmonic multiplication, requiring clean fundamental-band amplification at 175 MHz. IC Role / Device Role / Timing Role: Fundamental amplifier preceding frequency multipliers in solid-state microwave sources. Use Value: Low CRSS (18 pF) minimizes harmonic distortion; 125 V breakdown supports safe operation with 50 V rail and transient spikes. |
Use Scenario: RF power delivery in therapeutic diathermy units operating at 27.12 MHz for deep tissue heating. IC Role / Device Role / Timing Role: Linear RF power transistor in regulated Class AB amplifier with analog power control loop. Use Value: VGS sorting (±0.1 V bins) enables precise quiescent current setting across production units for consistent output linearity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SD2931-10 | No gold metallization; RthJC = 0.60 °C/W; identical pinout and electrical specs except thermal performance. | Suitable for lower-duty-cycle or forced-air-cooled applications where 25% higher junction temp is acceptable. | Select when cost sensitivity outweighs thermal margin requirements in non-critical ISM systems. |
| MRF1K50N | Higher V(BR)DSS (150 V); higher POUT (1500 W); TO-270 WB-12 package; requires different PCB layout and heatsinking. | Targeted at UHF TV broadcast and radar transmitters above 400 MHz, not optimized for 175 MHz ISM use. | Choose only when scaling to multi-kilowatt systems or extending frequency range beyond 230 MHz. |
Compared with SD2931-10W, the base SD2931 offers identical RF performance but sacrifices thermal ruggedness, while MRF1K50N trades broadband 175 MHz optimization for ultra-high-power UHF capability-making SD2931-10W the optimal choice for thermally constrained, high-reliability 13–230 MHz industrial amplifiers.
Availability
SD2931-10W is available at Aetrix Electronics and suitable for industrial RF heating, broadcast transmitters, ISM band amplifiers, and medical diathermy systems requiring stable component supply across extended production lifecycles.
Supply support for SD2931-10W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and consumer markets.
The SD2931-10W belongs to ST's high-voltage RF power MOSFET product line, engineered specifically for rugged, high-efficiency amplification in uncontrolled RF environments such as plasma generation and industrial heating.
FAQ
What is the maximum safe operating frequency for SD2931-10W?
The SD2931-10W is characterized and production-tested up to 230 MHz, with guaranteed 150 W output and 14 dB gain at 175 MHz. While usable at 30 MHz (29 dB gain) and 230 MHz (reduced POUT), operation beyond 230 MHz is not validated and may compromise gain flatness, efficiency, or stability due to parasitic resonance effects in the M174 package.
How does gold metallization improve long-term reliability?
Gold metallization prevents aluminum-silicon interdiffusion and Kirkendall void formation at elevated junction temperatures (>150 °C), which commonly cause gate-drain leakage increase and parametric drift in standard aluminum-metallized RF MOSFETs. This extends mean-time-to-failure by >3× in continuous 24/7 RF heating applications.
Can SD2931-10W be paralleled for higher output power?
Yes-its VGS-sorted variants (A–S bins) enable precise gate threshold matching, and dual-source terminals (Pins 2 & 4) reduce current-sharing imbalance. Parallel operation requires individual gate resistors (10 Ω), symmetrical layout, and shared thermal mass; ST recommends limiting parallel count to two devices to maintain stability and thermal uniformity.
Is the M174 package RoHS-compliant?
Yes-the M174 package meets RoHS Directive 2011/65/EU and REACH SVHC requirements. ST certifies it under ECOPACK® Grade 2, confirming lead-free solderability, halogen-free molding compound, and absence of intentionally added cadmium, mercury, hexavalent chromium, PBB, and PBDE.
SD2931-10W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M174
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 175MHz
- Gain:
- 15dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 20A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M174
SD2931-10W FAQ
1.How can I place an order for SD2931-10W through Aetrix?
Please submit a Request for Quotation (RFQ) for SD2931-10W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SD2931-10W reliable?
The price and inventory of SD2931-10W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2931-10W is usually 5 days.
3.What payment methods are accepted for SD2931-10W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2931-10W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SD2931-10W?
SD2931-10W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SD2931-10W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SD2931-10W?
For technical support, including SD2931-10W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2931-10W requirements.
6.How does Aetrix verify that SD2931-10W is sourced from the original manufacturer or authorized distributors?
All SD2931-10W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2931-10W meets industry standards.
7.What is the process for return or replacement of SD2931-10W?
All SD2931-10W units undergo pre-shipment inspection (PSI). If there is an issue with SD2931-10W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SD2931-10W part is unused and in its original packaging.
Return procedure for SD2931-10W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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