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STMicroelectronics SD2931-12MR

Part No.:
SD2931-12MR
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
M174MR
Datasheet:
AetrixSD2931-12MR.pdf
Description:
RF MOSFET 50V M174MR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,509

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Product details

Overview

SD2931-12MR from STMicroelectronics is a gold-metallized N-channel DMOS RF power transistor in M174MR epoxy-sealed package, rated for 50 V DC large-signal operation up to 230 MHz. It delivers ≥150 W output power with 14 dB gain at 175 MHz, features 0.45 °C/W junction-to-case thermal resistance, and supports 10:1 load mismatch tolerance - deployed in industrial ISM RF amplifiers requiring ruggedness under high moisture and thermal stress.

For engineers reviewing the SD2931-12MR datasheet, SD2931-12MR pinout, SD2931-12MR application, or SD2931-12MR equivalent, key selection criteria include its 125 V drain-source breakdown voltage, sorted GFS (6.0–7.5 mho) and VGS(Q) (2.65–3.15 V), thermally enhanced M174MR package with exposed thermal base, and verified 55–65% drain efficiency at 150 W output.

Technical Context

This RF power MOSFET employs a common-source push-pull configuration optimized for HF/VHF broadband amplification. Its gold metallization ensures stable gate contact under thermal cycling, while the moisture-resistant epoxy seal enables reliable operation in humid industrial environments - critical for ISM band transmitters operating at 13.56 MHz, 27.12 MHz, and 175 MHz.

The device uses a thermally enhanced M174MR package with dedicated thermal base (Pin 5), achieving 25% lower RthJC than standard SD2931. Dynamic performance is characterized at 50 V drain supply, 250 mA quiescent current, and includes Crss = 18 pF and CISS = 480 pF - enabling stable matching network design for fixed-tuned and broadband RF stages.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 125 V - Withstands transient overvoltage spikes in RF amplifier output stages without breakdown.
POUT @ 175 MHz ≥150 W - Delivers full-rated RF output power in ISM heating and plasma generation systems.
GPS 14 dB - Enables single-stage amplification from low-level driver signals to high-power output.
RthJC 0.45 °C/W - Reduces junction temperature rise by ~25% vs. SD2931, extending lifetime in sealed enclosures.
Load Mismatch 10:1 VSWR - Sustains full 150 W output into highly reactive or detuned loads without failure.
ηD 55–65% - Minimizes heat dissipation requirements in air-cooled or conduction-cooled RF subsystems.
CISS 480 pF @ 50 V - Defines input capacitance for impedance matching network component sizing.

Pinout & Package

The SD2931-12MR uses the M174MR 5-pin epoxy-sealed package with an exposed copper thermal base (Pin 5) for direct heatsink mounting. The package meets stringent moisture resistance requirements for operation in high-humidity industrial environments.

Pin/Terminal Circuit Role Design Meaning
1 Drain Main RF power output node; connected to output matching network and DC supply via RF choke.
2 Source Common RF ground reference; tied to PCB ground plane and source bypass capacitor bank.
3 Gate RF input control terminal; requires stable bias network and gate protection against ESD/transients.
4 Source Second source connection for low-inductance grounding; paralleled with Pin 2 for reduced source inductance.
5 Thermal Base Electrically isolated copper slug for mechanical attachment to heatsink; primary thermal path for 389 W dissipation.

Key Features

Feature Design Value
Gold metallization Ensures stable gate contact resistance and interconnect reliability across –65 °C to +150 °C storage and thermal cycling.
Common-source push-pull configuration Enables Class AB or Class C operation with symmetrical drive capability and minimized even-order distortion.
GFS and VGS(Q) sorting Alpha/numeric codes (I/J/K) marked on unit enable matched-pair selection for push-pull amplifier balancing.
M174MR moisture-resistant packaging Epoxy seal rated for cyclic high-humidity exposure - validated for operation in IP65-enclosed RF generators and plasma sources.
Thermally enhanced packing Reduces steady-state junction temperature by ~15 °C at 150 W output vs. legacy SD2931, improving long-term parametric stability.

Applications

Industrial RF Heating ISM Band Plasma Generators

Use Scenario: 27.12 MHz RF energy delivery to induction coils in plastic welding and food processing equipment.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 150 W into magnetically coupled load.

Use Value: 10:1 VSWR tolerance prevents shutdown during coil detuning due to material loading variation.

Use Scenario: 13.56 MHz RF excitation of low-pressure gas chambers in semiconductor etch and coating tools.

IC Role / Device Role / Timing Role: High-efficiency Class AB RF amplifier driving capacitive plasma coupling electrode.

Use Value: 55–65% drain efficiency reduces cooling demands in space-constrained vacuum chamber enclosures.

Medical Diathermy Systems Amateur Radio HF Amplifiers

Use Scenario: 27.12 MHz therapeutic tissue heating in physiotherapy devices with safety-critical thermal management.

IC Role / Device Role / Timing Role: Ruggedized final RF stage operating continuously at 150 W with strict thermal derating.

Use Value: 0.45 °C/W RthJC enables passive heatsinking in portable, fanless medical chassis designs.

Use Scenario: 1.8–30 MHz linear amplifier for HF amateur radio transceivers requiring wideband linearity and overload resilience.

IC Role / Device Role / Timing Role: Push-pull RF power stage biased for Class AB operation with low IMD3.

Use Value: Sorted GFS/VGS(Q) allows precise device matching to minimize carrier suppression and improve spectral purity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
SD2931-11MR Identical die and electrical specs; differs only in marking code (SD2931-11MR vs. SD2931-12MR) and GFS/VGS sort traceability. No functional difference; used interchangeably in same PCB layouts and thermal designs. Select when legacy BOM specifies -11MR marking or when sourcing from prior production lots.
MRF158G Higher V(BR)DSS (150 V), lower POUT (100 W @ 175 MHz), RthJC = 0.65 °C/W, TO-220AB package. Limited to lower-power ISM applications; lacks moisture resistance and thermal base optimization for sealed enclosures. Choose only if 150 V rating is mandatory and 150 W output is not required; avoid in high-humidity deployments.

Compared with SD2931-11MR, the -12MR offers identical RF performance but improved lot traceability for GFS/VGS sorting; versus MRF158G, it delivers +50% output power and 31% better thermal resistance - making it the preferred choice for high-reliability, high-power ISM amplifiers.

Availability

SD2931-12MR is available at Aetrix Electronics and suitable for industrial RF heating, ISM plasma generation, and medical diathermy systems requiring stable component supply, long-lifecycle support, and moisture-resistant packaging.

Supply support for SD2931-12MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, and RF components for industrial, automotive, and consumer applications.

The SD2931-12MR belongs to ST's high-power RF DMOS transistor product line, engineered specifically for rugged, high-efficiency amplification in industrial ISM bands where thermal robustness and environmental resilience are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SD2931-12MR?

The absolute maximum continuous drain current is 20 A at TCASE = 25 °C, per Table 1 of DS9247 Rev 4. However, practical operation at 150 W output limits average ID to ~12 A under typical Class AB conditions with 50 V supply and 250 mA quiescent current.

Does SD2931-12MR require external gate protection?

Yes - the device has ±40 V absolute maximum gate-source voltage rating. A series gate resistor (typically 10–47 Ω) and parallel Zener clamp (e.g., 18 V) are recommended to suppress RF-induced gate ringing and ESD transients observed in HF/VHF amplifier layouts.

How does the M174MR package differ from standard M174?

M174MR adds moisture-resistant epoxy encapsulation and refined thermal base plating, achieving <10% internal humidity after dry-pack storage and 25% lower RthJC. Mechanical dimensions match M174, ensuring drop-in compatibility with existing heatsinks and fixtures.

Can SD2931-12MR operate at 30 MHz with full 150 W output?

No - at 30 MHz, maximum rated POUT is 120 W (per Figure 22), limited by reduced gain and efficiency. The 150 W rating is specified only at 175 MHz; operation at 30 MHz requires derating to maintain safe junction temperature and reliability.

SD2931-12MR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
M174MR
Packaging:
Box
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel
Frequency:
175MHz
Gain:
15dB
Voltage - Test:
50 V
Current Rating (Amps):
20A
Noise Figure:
-
Current - Test:
250 mA
Power - Output:
150W
Voltage - Rated:
125 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
M174MR

SD2931-12MR FAQ

1.How can I place an order for SD2931-12MR through Aetrix?

Please submit a Request for Quotation (RFQ) for SD2931-12MR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD2931-12MR reliable?

The price and inventory of SD2931-12MR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2931-12MR is usually 5 days.

3.What payment methods are accepted for SD2931-12MR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2931-12MR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD2931-12MR?

SD2931-12MR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD2931-12MR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD2931-12MR?

For technical support, including SD2931-12MR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2931-12MR requirements.

6.How does Aetrix verify that SD2931-12MR is sourced from the original manufacturer or authorized distributors?

All SD2931-12MR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2931-12MR meets industry standards.

7.What is the process for return or replacement of SD2931-12MR?

All SD2931-12MR units undergo pre-shipment inspection (PSI). If there is an issue with SD2931-12MR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD2931-12MR part is unused and in its original packaging.

Return procedure for SD2931-12MR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SD2931-12MR Tags

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