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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics SD2932

Name: SD2932
Brand: STMicroelectronics
SKU: SD2932
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SD2932

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: M244

Datasheet:: SD2932.pdf

Description:: RF MOSFET 50V M244

Quantity:: RFQ Add To RFQ list

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Inventory:3,286

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Product details

Overview

SD2932 from STMicroelectronics is an N-channel RF power MOSFET in M244 hermetic package, rated for 125 V_BR, 40 A continuous drain current, and 500 W power dissipation. It delivers ≥300 W output power with ≥15 dB gain at 175 MHz in common-source push-pull configuration, optimized for HF/VHF/UHF broadcast and industrial RF amplifiers operating up to 250 MHz.

For engineers reviewing the SD2932 datasheet, SD2932 pinout, SD2932 application, or SD2932 equivalent, this page provides verified thermal resistance (0.35 °C/W), gate threshold voltage (1.5–4 V), output capacitance (190 pF), safe operating area limits, and broadband performance data across 88–230 MHz bands - critical for RF PA design, impedance matching, and thermal management validation.

Technical Context

The SD2932 operates as a high-power RF amplifier transistor in Class AB or C configurations, with gold-metallized source/drain/gate interconnects ensuring stable contact resistance under thermal cycling. Its low R_thJC (0.35 °C/W) enables direct mounting to heatsinks in air- or liquid-cooled systems, supporting continuous-wave operation at T_J ≤ +200 °C.

Designed for large-signal 50 V DC applications, it exhibits 480 pF input capacitance (C_ISS) and 18 pF reverse transfer capacitance (C_RSS), enabling predictable broadband matching from 88 MHz to 230 MHz. Load mismatch tolerance up to 5:1 VSWR at all phase angles confirms robustness in real-world antenna-coupled RF stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	125 V - Withstands 50 V DC supply with 2.5× safety margin against transient overvoltage in RF final stages.
P_OUT @ 175 MHz	≥300 W - Delivers full broadcast-grade output power in single-device push-pull amplifiers without paralleling.
G_PS	15–16 dB - Enables compact driver-stage design with minimal gain staging before final RF output stage.
η_D	50–60% - Supports efficient thermal budgeting in high-duty-cycle transmitters; reduces heatsink mass by ~30% vs. <50% efficiency devices.
R_thJC	0.35 °C/W - Allows direct copper heatsink mounting without thermal interface pads; junction-to-case ΔT = 175°C at full 500 W dissipation.
C_OSS	190 pF - Defines output tuning network size; enables use of compact, high-Q ceramic matching components at VHF frequencies.
Load Mismatch	5:1 VSWR - Sustains full 300 W output under worst-case antenna detuning without device failure or gain collapse.

Pinout & Package

The SD2932 is housed in the M244 hermetically sealed, 4-lead balanced package with metal flange for direct thermal attachment. Dimensions: 20.82 mm × 34.16 mm × 5.84 mm (L × W × H), flange-mounted with two M3 screw holes (center-to-center 21.85 mm).

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Source)	Common source node for push-pull pair	Internally bonded to flange; serves as primary thermal and RF ground reference; requires low-inductance chassis connection.
Lead 2 (Gate)	RF input control terminal	High-impedance node requiring 50 Ω matched drive; sensitive to ESD; gate voltage range ±40 V absolute max.
Lead 3 (Drain)	RF power output node	High-voltage, high-current RF output; connects to output matching network and DC supply via RF choke; rated 125 V breakdown.
Lead 4 (Source)	Second source terminal (balanced configuration)	Electrically identical to Lead 1; used for symmetrical layout in push-pull designs; ensures equal current sharing and thermal symmetry.

Key Features

Feature	Design Value
Gold metallization	Prevents intermetallic diffusion and bond degradation at >150 °C case temperature; extends lifetime in high-reliability broadcast transmitters.
Common-source push-pull configuration	Enables even-harmonic cancellation and doubled output power without external combiners; simplifies PCB layout and reduces filter complexity.
0.35 °C/W junction-to-case thermal resistance	Permits 500 W continuous dissipation with ≤175 °C junction rise above 25 °C case - eliminates need for forced-air cooling in many 1 kW-class amplifiers.
175–230 MHz broadband performance	Maintains ≥280 W P_OUT, ≥14 dB G_PS, and ≥48% η_D across full band - supports multi-channel VHF land mobile radio base stations without retuning.
5:1 VSWR load tolerance	Eliminates need for circulators or automatic antenna tuners in field-deployed HF/VHF amplifiers; improves system MTBF by removing failure-prone external protection circuits.

Applications

Broadcast Transmitter Final Stage

VHF Land Mobile Radio Base Station

Use Scenario: High-power AM/FM broadcast transmitter final amplifier operating at 88–108 MHz with 1 kW output requirement.

IC Role / Device Role / Timing Role: RF power transistor in Class C push-pull configuration delivering 300 W per device; two parallel SD2932 pairs achieve full 1.2 kW output.

Use Value: Gold metallization and 0.35 °C/W R_thJC ensure 20+ year operational life under continuous duty; 5:1 VSWR tolerance prevents shutdown during antenna icing or wind-induced detuning.

Use Scenario: 150 MHz public safety base station amplifier supporting simultaneous multi-channel P25 trunked operation.

IC Role / Device Role / Timing Role: Final-stage RF power device in broadband 175–230 MHz amplifier module; configured in push-pull for harmonic suppression and linearity.

Use Value: Maintains ≥14 dB gain and ≥48% efficiency across full band - eliminates need for channel-specific tuning; reduces spurious emissions below FCC Part 90 limits.

Industrial RF Heating Generator

Avionics HF Communication Amplifier

Use Scenario: 27.12 MHz RF induction heater for metal brazing, requiring 500 W CW output with high reliability.

IC Role / Device Role / Timing Role: Switching power transistor in half-bridge resonant inverter topology; driven at fixed frequency with variable duty cycle for power control.

Use Value: 125 V_BR rating accommodates 50 V bus with 2.5× headroom against switching spikes; 200 °C max junction temperature supports ambient >70 °C cabinet environments.

Use Scenario: 2–30 MHz HF transceiver final amplifier in military airborne radios, operating in vibration-prone, thermally constrained enclosures.

IC Role / Device Role / Timing Role: High-efficiency RF power stage in Class AB linear amplifier; mounted directly to aluminum chassis for passive cooling.

Use Value: Hermetic M244 package prevents moisture ingress and corrosion in humid, salt-laden flight environments; gold metallization resists fretting wear under mechanical vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF158	Lower P_OUT (150 W @ 175 MHz), higher R_thJC (0.65 °C/W), TO-247 plastic package	Limited to medium-power HF amplifiers; unsuitable for 300 W+ broadcast or industrial heating	Select when cost sensitivity outweighs power density; requires larger heatsink and derating above 85 °C ambient.
BLF278	Higher V_BRDSS (135 V), same P_OUT (300 W), but lower gain (13 dB) and higher C_OSS (220 pF)	Preferred for ultra-broadband 1.8–250 MHz designs where gain flatness matters more than peak efficiency	Choose for wideband HF/VHF amplifiers needing consistent gain across amateur radio bands; expect 3–4% lower drain efficiency.

Compared with MRF158 and BLF278, the SD2932 offers superior thermal performance (0.35 °C/W vs. ≥0.65 °C/W) and higher gain (15–16 dB), enabling smaller heatsinks and fewer gain stages in fixed-frequency broadcast and land-mobile systems - reducing BOM count and PCB area by up to 22%.

Availability

SD2932 is available at Aetrix Electronics and suitable for broadcast transmitters, VHF land mobile radio base stations, and industrial RF heating generators requiring stable component supply, long-lifecycle support, and traceable hermetic packaging.

Supply support for SD2932 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

The SD2932 belongs to ST's high-power RF transistor product line, engineered specifically for ruggedized HF/VHF/UHF amplification in mission-critical broadcast, defense, and industrial systems demanding hermetic reliability and thermal resilience.

FAQ

What is the maximum recommended gate voltage for reliable operation?

The SD2932 specifies ±40 V absolute maximum gate-source voltage (V_GS). For reliable long-term operation, ST recommends limiting V_GS to ±20 V during normal switching and biasing. Exceeding ±25 V risks irreversible gate oxide damage, especially under RF drive conditions with transient overshoot. Gate drive circuits must include clamping diodes and series resistance to limit dV/dt-induced current spikes.

Can SD2932 be operated in Class D or E switching mode?

No - the SD2932 is characterized and qualified only for linear Class AB and Class C RF amplifier operation. Its gate charge profile, body diode recovery characteristics, and SOA curves are not specified for hard-switching topologies. Attempting Class D/E operation risks avalanche-induced failure due to unclamped inductive turn-off energy and insufficient reverse recovery ruggedness.

Is the M244 package RoHS-compliant and lead-free?

Yes - the SD2932 M244 package is ECOPACK®-compliant and fully lead-free, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The gold metallization and ceramic-to-metal seal ensure compatibility with lead-free reflow profiles up to 260 °C peak, with no special handling required beyond standard hermetic device protocols.

How does the dual-source configuration affect PCB layout?

The dual-source leads (Leads 1 and 4) require symmetrical, low-inductance routing to a common ground plane or flange mount point. Unequal trace lengths or impedance mismatches cause current imbalance, leading to gain asymmetry and thermal runaway in push-pull operation. ST recommends mirror-symmetric layout with ≤0.5 mm length difference and direct flange soldering using Sn96.5Ag3Cu0.5 alloy for optimal thermal transfer.

SD2932 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: M244

Packaging:: Box

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel

Frequency:: 175MHz

Gain:: 16dB

Voltage - Test:: 50 V

Current Rating (Amps):: 40A

Noise Figure:: -

Current - Test:: 500 mA

Power - Output:: 300W

Voltage - Rated:: 125 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: M244

SD2932 FAQ

1.How can I place an order for SD2932 through Aetrix?

Please submit a Request for Quotation (RFQ) for SD2932 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD2932 reliable?

The price and inventory of SD2932 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2932 is usually 5 days.

3.What payment methods are accepted for SD2932?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2932 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD2932?

SD2932 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD2932 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD2932?

For technical support, including SD2932 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2932 requirements.

6.How does Aetrix verify that SD2932 is sourced from the original manufacturer or authorized distributors?

All SD2932 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2932 meets industry standards.

7.What is the process for return or replacement of SD2932?

All SD2932 units undergo pre-shipment inspection (PSI). If there is an issue with SD2932, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD2932 part is unused and in its original packaging.

Return procedure for SD2932:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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