STMicroelectronics SD2932B

Overview

SD2932B from STMicroelectronics is a gold-metallized N-channel RF power MOSFET designed for 50 V DC large-signal amplifier stages in HF/VHF/UHF transmitters, delivering ≥300 W output power with 15 dB gain at 175 MHz and supporting operation up to 250 MHz in common-source push-pull configuration.

For engineers reviewing the SD2932B datasheet, SD2932B pinout, SD2932B application, or SD2932B equivalent, this device is selected for high-efficiency RF final-stage amplification in broadcast transmitters, land-mobile radio base stations, and industrial RF heating systems where thermal stability, broadband impedance matching, and load mismatch tolerance (5:1 VSWR) are critical.

Technical Context

The SD2932B operates as a single-ended or push-pull RF power switch in Class AB or Class C configurations, with gate-source threshold voltage (V_GS(Q)) ranging 1.5–4 V and transconductance (G_FS) of 5 mho at 5 A drain current. Its 0.35 °C/W junction-to-case thermal resistance enables high-power dissipation in forced-air or heatsink-mounted setups.

It exhibits broadband performance across 88–230 MHz bands, with measured input impedance (Z_IN) = 0.92 − j0.14 Ω and drain-load impedance (Z_DL) = 3.17 + j4.34 Ω at 175 MHz, optimized for 50 Ω system matching using external LC networks and ferrite-coupled transformers per ST's reference test circuits.

Key Specifications

Pinout & Package

The SD2932B is housed in the M244 hermetically sealed, flanged, 4-lead balanced package with metal case acting as drain terminal. Package dimensions: 20.82 mm × 34.16 mm × 5.84 mm (L × W × H), featuring symmetrical lead layout for push-pull thermal and electrical balance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF1K50N and BLF188XR, the SD2932B uniquely balances 300 W output, 15 dB gain, and 50–60% efficiency across 88–230 MHz while maintaining compatibility with 50 V supply infrastructure and legacy push-pull driver designs.

Availability

SD2932B is available at Aetrix Electronics and suitable for broadcast FM transmitters, land-mobile radio base stations, UHF TV transmitters, and industrial RF heating generators requiring stable component supply across extended production lifecycles.

Supply support for SD2932B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

The SD2932B belongs to ST's high-power RF MOSFET product line, engineered specifically for robust, high-efficiency amplifier stages in commercial and industrial broadcast and wireless infrastructure equipment.

FAQ

What is the maximum recommended case temperature for continuous operation?

The SD2932B supports continuous operation up to +150 °C case temperature, verified by its 200 °C maximum junction temperature rating and 0.35 °C/W thermal resistance. Operation above 150 °C requires derating per Figure 3 (maximum thermal resistance vs. case temperature) and validated heatsink design with thermal interface material.

Can SD2932B be used in single-ended configuration?

Yes - the SD2932B can operate in single-ended mode using one gate terminal and tying the second gate to the first via low-inductance trace. However, full-rated 300 W output and optimal thermal balance require push-pull configuration with both gate leads driven differentially, as specified in ST's 175 MHz test circuit.

Is the M244 package RoHS-compliant?

Yes - the SD2932B M244 package carries ECOPACK®2 certification, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. ST confirms lead-free terminations and halogen-free molding compound, with full compliance documentation available in the ECOPACK® database at www.st.com.

What gate drive voltage range is required for full power operation?

A peak-to-peak gate drive of ±10 V (i.e., −10 V to +10 V swing) is required to achieve full 300 W output at 175 MHz. The device's VGS(Q) range (1.5–4 V) and ΔVGS limit (200 mV) mandate matched, low-skew differential drive to maintain symmetry in push-pull operation and prevent thermal runaway.