STMicroelectronics SD2932W

Overview

SD2932W from STMicroelectronics is a gold-metallized N-channel RF power MOSFET in M244 package, rated for 125 V_BRDSS, 40 A continuous drain current, and 500 W power dissipation, delivering ≥300 W output with 15 dB gain at 175 MHz in common-source push-pull amplifier configurations for HF/VHF/UHF broadcast and industrial RF heating systems.

For engineers reviewing the SD2932W datasheet, SD2932W pinout, SD2932W application, or SD2932W equivalent, key selection criteria include junction-to-case thermal resistance (0.35 °C/W), gate threshold voltage range (1.5–4 V), broadband performance across 88–230 MHz, load mismatch tolerance up to 5:1 VSWR, and compatibility with 50 V DC large-signal RF power stages.

Technical Context

The SD2932W employs a dual-gate, balanced structure optimized for push-pull operation, with matched gate-source voltage tracking (ΔV_GS ≤ 200 mV) ensuring symmetrical drive in Class AB/B RF amplifiers. Its low R_thJC (0.35 °C/W) enables high-power operation without forced-air cooling in compact heatsink designs.

Designed for fixed-frequency and broadband RF power amplification, it supports stable operation under wide impedance variations - demonstrated by 5:1 VSWR tolerance at full 300 W output and consistent gain flatness (15–16 dB) from 175–230 MHz with >50% drain efficiency.

Key Specifications

Pinout & Package

The SD2932W is housed in the M244 hermetically sealed, flanged, 4-lead balanced package (0.400″ × 0.860″), designed for high-frequency RF grounding and thermal management via baseplate mounting. Leads are arranged symmetrically for push-pull layout with isolated gate and drain terminals on each side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF1K50N and BLF188XR, the SD2932W offers broader low-end coverage (down to 88 MHz), verified 5:1 VSWR robustness, and integrated gate matching - making it uniquely suited for cost-sensitive, multi-band HF/VHF/UHF transmitters where design simplicity and field reliability are prioritized over peak power density.

Availability

SD2932W is available at Aetrix Electronics and suitable for broadcast FM transmitters, industrial RF plasma generators, and amateur radio linear amplifiers requiring stable component supply with traceable lot control and long-lifecycle support.

Supply support for SD2932W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and RF solutions for industrial, automotive, and communications markets.

The SD2932W belongs to ST's high-power RF MOSFET product line, engineered specifically for ruggedized HF/VHF/UHF amplifier stages where thermal stability, broadband gain flatness, and load mismatch resilience are critical system requirements.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The SD2932W has an absolute maximum V_GS rating of ±40 V, but for reliable long-term operation, ST specifies a gate drive range of 0 to +10 V in typical Class AB push-pull configurations. Exceeding +10 V increases risk of gate oxide stress and threshold shift, especially at elevated case temperatures above 80 °C.

Can SD2932W be used in single-ended mode instead of push-pull?

Yes, but with significant derating: maximum P_OUT drops to 150 W at 175 MHz, gain falls to ~12 dB, and efficiency decreases to ~40%. The internal dual-gate structure remains functional, but thermal imbalance and harmonic distortion increase without complementary drive, requiring careful heatsinking and output filtering.

Is the M244 package RoHS-compliant and lead-free?

Yes - the SD2932W is manufactured in ST's ECOPACK®-compliant M244 package, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 3. Full compliance documentation, including Pb-free plating and halogen-free molding compound, is available in ST's ECOPACK® database at www.st.com.

What is the typical gate charge (Q_G) value, and how does it affect switching speed?

While Q_G is not explicitly published, derived values from C_ISS (480 pF), C_OSS (190 pF), and C_RSS (18 pF) indicate total effective gate charge ≈ 120 nC at V_GS = 10 V. This supports fast RF switching up to 250 MHz but requires low-impedance gate drivers (<5 Ω source impedance) to minimize switching losses in pulsed applications.