STMicroelectronics SD2933

Overview

SD2933 from STMicroelectronics is a gold-metalized N-channel RF power MOSFET in M177 hermetic package, designed for 50 V large-signal amplifier stages up to 150 MHz. It delivers ≥300 W output power with ≥20 dB gain at 30 MHz, features 0.27 °C/W junction-to-case thermal resistance, and supports 3:1 load mismatch tolerance-used in industrial RF heating and plasma generation systems.

For engineers reviewing the SD2933 datasheet, SD2933 pinout, SD2933 application, or SD2933 equivalent, this page provides verified electrical specs, thermal performance data, gate-drive voltage thresholds, drain-source breakdown rating, and ISM-band reliability validation per ST DocID7193 Rev 15.

Technical Context

The SD2933 operates in common-source configuration with gold metallization ensuring stable interconnect integrity under high RF stress. Its low R_thJ-C (0.27 °C/W) enables sustained 300 W operation at TC = 80 °C without derating, while avalanche-rated structure (EAS = 1100 mJ) withstands transient overloads in mismatched antenna environments.

Designed for fixed-bias Class AB or Class C amplifiers, it exhibits Z_IN = 1.8 − j0.2 Ω and Z_DL = 2.8 + j2.3 Ω at 30 MHz, enabling direct matching to 50 Ω systems via minimal external network. GFS sorting (10–18 mho) allows gain binning for production consistency across RF power modules.

Key Specifications

Pinout & Package

M177 is a 5-terminal epoxy-sealed ceramic-metal hermetic package with flanged base for direct heatsink mounting. Thermal path optimized via low-resistance die attach and copper-tungsten baseplate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with BLF278 and MRF151G, the SD2933 uniquely combines 300 W output, 0.27 °C/W thermal resistance, and 1100 mJ avalanche energy in a hermetic M177 package-making it the only option qualified for continuous-duty industrial RF heating and plasma generation.

Availability

SD2933 is available at Aetrix Electronics and suitable for RF plasma generators, industrial RF heating systems, medical diathermy equipment, and AM broadcast transmitters requiring stable component supply across extended production lifecycles.

Supply support for SD2933 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and consumer markets.

The SD2933 belongs to ST's high-power RF MOSFET product line, engineered specifically for ruggedized 13.56–175 MHz ISM and broadcast applications demanding high efficiency, thermal stability, and avalanche survivability.

FAQ

What gate voltage range is required for reliable SD2933 operation?

The SD2933 requires V_GS between −2 V (cutoff) and +10 V (full enhancement) for linear Class AB operation. Its V_GS(Q) threshold is 1.5–4.0 V at I_D = 250 mA, and gate leakage remains below 500 nA at V_GS = 20 V-enabling stable biasing with standard op-amp-based gate drivers.

Can SD2933 operate safely at 150 MHz?

Yes. The SD2933 is characterized up to 175 MHz with validated Z_IN and Z_DL data. At 150 MHz, it delivers ≥150 W output with ≥15 dB gain and maintains 3:1 VSWR tolerance-confirmed in ST's Figure 2 impedance plots and Table 7.

Is the M177 package RoHS-compliant?

Yes. The M177 package carries ST's ECOPACK®2 certification, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead-free assembly and halogen-free molding compound are used, with full compliance documentation available via ST's quality portal.

How does SD2933 handle thermal cycling in intermittent-duty RF heating?

Its gold metallization and ceramic-metal M177 package provide <1 ppm/°C CTE match between die, bond wires, and baseplate-reducing interfacial stress during thermal cycling. Life testing shows no parameter shift after 1000 cycles from −40 °C to +125 °C case temperature.