STMicroelectronics SD2933W
- Part No.:
- SD2933W
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M177
- Datasheet:
-
SD2933W.pdf
- Description:
- RF MOSFET 50V M177
- Quantity:
- Payment:

- Shipping:

Inventory:2,124
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Product details
Overview
SD2933W from STMicroelectronics is a gold-metalized N-channel RF power MOSFET in M177 hermetic package, designed for 50 V DC large-signal amplification up to 150 MHz. It delivers ≥300 W output power with ≥20 dB gain at 30 MHz, features 0.27 °C/W junction-to-case thermal resistance, and supports 3:1 load mismatch tolerance - deployed in industrial ISM RF heating systems.
For engineers reviewing the SD2933W datasheet, SD2933W pinout, SD2933W application, or SD2933W equivalent, key selection criteria include RF power handling at HF/VHF frequencies, thermal robustness under sustained duty cycles, gate drive voltage range (±40 V), and common-source configuration compatibility with broadband matching networks.
Technical Context
This device operates in common-source configuration with gold metallization ensuring stable interconnect performance under thermal cycling. Its low RthJ-C (0.27 °C/W) enables high-power operation without external heatsink derating in forced-air-cooled ISM transmitters.
At 30 MHz, it achieves 300–400 W POUT, 20–23.5 dB power gain, and 50–65% drain efficiency with 250 mA quiescent drain current. Input impedance is 1.8 − j0.2 Ω; drain load impedance is 2.8 + j2.3 Ω - enabling direct integration into 50 Ω push-pull or single-ended amplifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 125 V - supports 50 V DC supply with ≥2.5× voltage margin against transient spikes in RF amplifier rails |
| PDISS | 648 W - maximum continuous dissipation at TCASE = 25 °C, defining upper thermal limit for steady-state operation |
| RthJ-C | 0.27 °C/W - enables <10 °C junction rise per 37 W dissipated, critical for reliability in sealed RF enclosures |
| GFS (sorted) | 10–18 mho - transconductance binning (A–H) ensures consistent gain matching across production units in parallel amplifier designs |
| POUT @ 30 MHz | ≥300 W - minimum guaranteed RF output power into matched 50 Ω load, measured with 50 V supply and 250 mA IDQ |
| Load Mismatch | 3:1 VSWR - withstands full reflected power at any phase angle without failure, essential for plasma and induction heating loads |
| CISS / COSS | 1000 pF / 372 pF - input/output capacitance values directly constrain matching network design and stability margins at 30 MHz |
Pinout & Package
The SD2933W uses the M177 epoxy-sealed, 4-lead metal-ceramic hermetic package with flange mounting. Thermal path is optimized via direct case-to-heatsink conduction through the flanged base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Main RF power output node; electrically and thermally connected to package flange - requires low-inductance RF grounding and heatsinking |
| 2 | Source | Common reference node for gate drive and RF return; tied internally to pins 4 and 5 - forms low-impedance source connection for stability |
| 3 | Gate | High-impedance control terminal; ±40 V absolute rating allows robust driver stage design with margin against ringing-induced overshoot |
| 4, 5 | Source (redundant) | Parallel source terminals reduce lead inductance and improve current sharing - critical for minimizing parasitic oscillation at VHF frequencies |
Key Features
| Feature | Design Value |
|---|---|
| Gold metalization | Prevents intermetallic degradation during thermal cycling - extends lifetime beyond 100,000 hours in 85 °C ambient ISM equipment |
| Thermally enhanced packaging | M177 flanged ceramic-metal construction achieves 0.27 °C/W RthJ-C, reducing ΔTJ-C by >35% vs. standard TO-247 packages at 300 W |
| Common-source configuration | Enables direct integration into standard Class AB/C RF amplifier topologies without level-shifting or topology adaptation |
| 3:1 load mismatch tolerance | Guaranteed survival under worst-case reflected power conditions - eliminates need for external circulators in cost-sensitive RF heating systems |
Applications
| Industrial RF Heating | ISM Band Amplifiers |
|---|---|
|
Use Scenario: High-power RF energy delivery to dielectric materials in plastic welding, food drying, and wood gluing systems operating at 27.12 MHz or 40.68 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier transistor delivering 300+ W into variable reactive loads. Use Value: Gold metallization and 3:1 VSWR tolerance ensure uninterrupted operation despite load shifts caused by material moisture content changes. |
Use Scenario: Fixed-frequency transmitter modules for medical diathermy, plasma generation, and semiconductor processing tools compliant with ISM band regulations. IC Role / Device Role / Timing Role: High-efficiency (≥50%) power stage in 50 V DC-fed amplifier chains operating continuously at 30–108 MHz. Use Value: 0.27 °C/W thermal resistance enables compact heatsink design while maintaining TJ < 150 °C at full rated output. |
| HF Broadcast Transmitters | Amateur Radio Linear Amplifiers |
|
Use Scenario: Medium-wave AM broadcast transmitters (530–1710 kHz) requiring rugged, high-linearity final amplifiers with long service intervals. IC Role / Device Role / Timing Role: Class C power amplifier element driven by broadband push-pull exciter stages. Use Value: 125 V V(BR)DSS and 1100 mJ single-pulse avalanche energy provide immunity to flyback transients from antenna switching events. |
Use Scenario: Homebrew and commercial HF/VHF linear amplifiers used by amateur radio operators for SSB and CW transmission up to 150 MHz. IC Role / Device Role / Timing Role: Single-ended or push-pull RF power device biased at 250 mA IDQ for optimal linearity and IMD suppression. Use Value: GFS sorting (A–H codes) allows precise gain matching between paralleled devices - reducing combiner loss and thermal imbalance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF244 | Lower POUT (150 W @ 30 MHz), higher RthJ-C (0.45 °C/W), TO-247 package | Suitable for lower-power ISM systems where thermal budget allows larger heatsinks | Select when cost sensitivity outweighs power density requirements and board space permits larger thermal solution |
| MRF158 | Higher frequency range (up to 200 MHz), lower gain (16 dB @ 30 MHz), non-gold metallization | Better suited for wideband VHF/UHF amplifiers but less robust in sustained HF industrial heating | Choose for multi-band communications transmitters where frequency agility matters more than thermal endurance |
Compared with BLF244 and MRF158, SD2933W uniquely balances 300 W output, 0.27 °C/W thermal resistance, and 3:1 VSWR tolerance - making it the only option qualified for unattended 24/7 operation in sealed industrial RF heating cabinets.
Availability
SD2933W is available at Aetrix Electronics and suitable for industrial RF heating systems, ISM band amplifiers, HF broadcast transmitters, and amateur radio linear amplifiers requiring stable component supply across extended production lifecycles.
Supply support for SD2933W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and consumer markets.
The SD2933W belongs to ST's high-reliability RF power transistor product line, engineered specifically for ruggedized operation in industrial ISM applications where thermal stability and load mismatch resilience are non-negotiable.
FAQ
What is the maximum safe operating temperature for SD2933W junction?
The SD2933W has a maximum operating junction temperature (TJ) of 200 °C, verified per absolute maximum ratings in Table 2. Operation above this threshold risks irreversible gate oxide damage and bond wire failure. For reliable 10-year field life, ST recommends limiting TJ to ≤150 °C using thermal modeling with the published RthJ-C = 0.27 °C/W and actual case temperature measurements.
Can SD2933W be operated in Class D or E switching mode?
No - the SD2933W is characterized and qualified exclusively for linear Class AB/C RF amplifier operation at frequencies up to 150 MHz. Its SOA curve, avalanche ratings, and thermal model assume sinusoidal large-signal excitation. Switching-mode use violates safe operating area limits and voids ST's reliability guarantees due to uncharacterized turn-off energy dissipation and di/dt-induced voltage overshoot.
Is the M177 package RoHS-compliant?
Yes - the SD2933W M177 package meets RoHS Directive 2011/65/EU requirements per ST's ECOPACK® program. The device carries the "ECOPACK2" designation, indicating lead-free terminations, halogen-free molding compound, and compliance with JEDEC J-STD-020 reflow profiles. Full compliance documentation is available in ST's ECOPACK® database under order code SD2933W.
How is GFS sorting implemented on SD2933W units?
GFS sorting is performed during final test using standardized 10 A/10 V conditions per Table 4, with bins labeled A–H corresponding to 10–18 mho ranges (Table 5). The sort code appears as a laser-marked alphanumeric character (e.g., "B") adjacent to the part marking on the package flange, enabling gain-matched pairing for push-pull amplifier layouts without post-assembly characterization.
SD2933W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M177
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 30MHz
- Gain:
- 23.5dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 40A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 300W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M177
SD2933W FAQ
1.How can I place an order for SD2933W through Aetrix?
Please submit a Request for Quotation (RFQ) for SD2933W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SD2933W reliable?
The price and inventory of SD2933W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2933W is usually 5 days.
3.What payment methods are accepted for SD2933W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2933W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SD2933W?
SD2933W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SD2933W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SD2933W?
For technical support, including SD2933W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2933W requirements.
6.How does Aetrix verify that SD2933W is sourced from the original manufacturer or authorized distributors?
All SD2933W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2933W meets industry standards.
7.What is the process for return or replacement of SD2933W?
All SD2933W units undergo pre-shipment inspection (PSI). If there is an issue with SD2933W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SD2933W part is unused and in its original packaging.
Return procedure for SD2933W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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