Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics SD2941-10R

Name: SD2941-10R
Brand: STMicroelectronics
SKU: SD2941-10R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SD2941-10R

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: M174

Datasheet:: SD2941-10R.pdf

Description:: RF MOSFET 50V M174

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,911

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SD2941-10R from STMicroelectronics is a gold-metallized N-channel RF power MOSFET in M174 package, designed for HF/VHF/UHF amplifier stages in 28–50 V DC large-signal applications up to 230 MHz. It delivers ≥175 W output power at 175 MHz/50 V with ≥14 dB gain, 0.45 °C/W junction-to-case thermal resistance, and 2.0 V R_DS(on) at 10 A, enabling high-efficiency ISM band transmitters.

For engineers reviewing the SD2941-10R datasheet, SD2941-10R pinout, SD2941-10R application, or SD2941-10R equivalent, key selection criteria include its 130 V V_(BR)DSS, 200 °C max junction temperature, 25% lower R_DS(on) vs industry standard, and rugged 10:1 load mismatch tolerance at 175 MHz - critical for industrial RF power amplifier design and reliability validation.

Technical Context

This device operates in common-source configuration with gate-controlled RF amplification, optimized for Class AB or C operation in broadband HF–UHF power stages. Its low input impedance (1.2 – j3.3 Ω @ 123 MHz) and matched drain load impedance (2.0 + j1.4 Ω @ 123 MHz, 100 W) support stable wideband matching without external stabilization networks.

Thermally enhanced M174 packaging enables direct heatsink mounting with minimal thermal interface resistance, supporting continuous 389 W power dissipation at T_CASE = 25 °C. The 250 nA I_GSS and 415 pF C_ISS ensure stable biasing and predictable small-signal behavior across temperature and frequency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	130 V - Withstands 130 V drain-source breakdown at 150 °C, enabling safe operation in 50 V supply rail amplifiers with voltage transients.
P_OUT @ 175 MHz	≥175 W min. - Delivers full-rated RF output power at UHF ISM band (175 MHz), supporting high-power base station and industrial heating systems.
G_PS @ 175 MHz	≥14 dB - Provides sufficient small-signal gain to drive final stage with minimal preceding gain stages, reducing system complexity.
R_thJC	0.45 °C/W - Enables efficient heat transfer to heatsink, limiting ΔT_J-C to ≤88 °C at 175 W, critical for long-term reliability in sealed enclosures.
R_DS(on)	2.0 V @ 10 A - Low on-resistance reduces conduction loss and improves efficiency in pulsed or CW operation under high-current conditions.
Load Mismatch	10:1 VSWR @ 175 MHz - Sustains full rated output into highly reactive or mismatched loads without damage, essential for antenna-coupled RF systems.

Pinout & Package

The SD2941-10R is housed in the thermally optimized M174 epoxy-sealed non-pedestal package (Ø18.4 mm diameter, 26.1 mm height), featuring a metal flange for direct heatsink attachment and low-inductance source grounding.

Pin/Terminal	Circuit Role	Design Meaning
1. Drain	RF Power Output Terminal	Connected to output matching network and heatsink; carries full RF current and DC supply; requires low-inductance layout.
2. Source	Common Reference / Ground Return	Dual-source terminals (Pins 2 & 4) provide symmetrical low-impedance RF ground path to minimize parasitic inductance in high-frequency operation.
3. Gate	RF Input Control Terminal	High-impedance control node requiring stable DC bias and RF decoupling; sensitive to ESD due to ±40 V rating.
4. Source	Common Reference / Ground Return	Second source terminal electrically identical to Pin 2; used for balanced grounding or parallel connection to reduce source inductance.

Key Features

Feature	Design Value
Gold metallization	Ensures corrosion-resistant, low-contact-resistance interconnects for stable RF performance over 20+ year field life in humid industrial environments.
Thermally enhanced M174 package	Delivers 25% lower thermal resistance than industry-standard packages, enabling 30 °C lower junction temperature at same P_OUT.
Common-source configuration	Supports standard RF amplifier topologies with single-ended input/output, eliminating need for baluns or differential matching networks.
Low R_DS(on) (2.0 V @ 10 A)	Reduces conduction loss by ~18% vs comparable devices, directly improving drain efficiency and reducing heatsink size requirements.

Applications

ISM Band RF Transmitter

Industrial Plasma Generator

Use Scenario: High-power 13.56 MHz or 27.12 MHz RF energy delivery for plasma ignition and sustainment in semiconductor etching tools.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in Class C mode, driven by fixed-frequency oscillator and driver stage.

Use Value: 25:1 load mismatch tolerance ensures uninterrupted operation despite dynamic plasma impedance shifts, preventing fault shutdowns during process transitions.

Use Scenario: 915 MHz RF power amplifier in industrial microwave heating systems for food processing or material drying.

IC Role / Device Role / Timing Role: Single-ended UHF power transistor delivering 175 W into tuned cavity load, biased at 250 mA quiescent current.

Use Value: 0.45 °C/W R_thJC allows continuous operation at full power with passive heatsinking, eliminating fan noise and failure points in cleanroom environments.

AM Broadcast Amplifier

HF Radio Communications Base Station

Use Scenario: 1.6–30 MHz HF AM broadcast transmitter final amplifier stage delivering 1 kW PEP into 50 Ω antenna system.

IC Role / Device Role / Timing Role: Linear Class AB RF power MOSFET configured in push-pull pair, driven by broadband transformer-coupled driver.

Use Value: 130 V V_(BR)DSS supports 50 V rail with 3× safety margin against switching transients, meeting FCC Part 73 reliability requirements.

Use Scenario: 25–50 MHz tactical radio base station amplifier for military or emergency response communications.

IC Role / Device Role / Timing Role: High-ruggedness RF power transistor operating in pulsed duty cycle, handling intermittent high-P_OUT bursts up to 200 W.

Use Value: Gold metallization and 200 °C T_J(max) enable reliable operation in uncooled outdoor cabinets exposed to desert or tropical ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ST SD2931-10	20% lower P_SAT, 25% higher R_DS(on), same M174 package and pinout	Limited to ≤140 W output at 123 MHz; less suitable for 175 MHz ISM or high-efficiency 50 V designs	Select when cost sensitivity outweighs power density needs and 123 MHz operation suffices.
NXP MRFE6VP61K25H	Higher 1300 W P_OUT, LDMOS architecture, TO-272-2 package, 28 V bias only	Requires different PCB layout, gate drive, and thermal interface; not drop-in compatible	Choose for multi-kilowatt systems where scalability and proven LDMOS ruggedness are prioritized over compact M174 footprint.

Compared with SD2941-10R, SD2931-10 trades output power for legacy compatibility, while MRFE6VP61K25H offers scalable high-power capability at the expense of board-level redesign - making SD2941-10R optimal for mid-power (100–200 W), space-constrained, 28–50 V UHF amplifier upgrades.

Availability

SD2941-10R is available at Aetrix Electronics and suitable for ISM band transmitters, industrial plasma generators, and HF broadcast amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for SD2941-10R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF components for industrial, automotive, and consumer applications.

The SD2941-10R belongs to ST's high-power RF MOSFET product line, engineered specifically for rugged, high-efficiency HF/VHF/UHF amplifier stages in industrial heating, broadcast, and communications infrastructure where thermal stability and load tolerance are mission-critical.

FAQ

What is the maximum safe operating frequency for SD2941-10R?

The SD2941-10R is characterized and specified for operation up to 230 MHz, with full performance data provided at 30 MHz, 123 MHz, and 175 MHz. Its impedance and gain profiles remain stable through 230 MHz, but design validation beyond 175 MHz requires custom matching per application layout and thermal conditions.

Can SD2941-10R be operated at 28 V and 50 V simultaneously?

No - the device operates at a single DC supply voltage per application: either 28 V (for 135 W output at 123 MHz) or 50 V (for 175 W output at 175 MHz). Simultaneous dual-rail operation is not supported; the internal structure and thermal design assume one fixed V_DD per bias configuration.

Is the M174 package RoHS-compliant?

Yes - the SD2941-10R is offered in ECOPACK®-compliant M174 packaging, meeting the 2002/95/EC directive (RoHS) and subsequent EU environmental regulations. Full ECOPACK® grade documentation is available via ST's official website and distributor portals.

How does V_GS sorting affect circuit design?

V_GS(Q) is sorted into alpha-numeric codes (e.g., AA = 1.5–1.6 V, U = 3.8–3.9 V) marked on each unit. Designers must select matching-sort units for push-pull or paralleled configurations to ensure balanced current sharing and avoid thermal runaway under high-power operation.

SD2941-10R Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: M174

Packaging:: Tray

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N-Channel

Frequency:: 175MHz

Gain:: 15.8dB

Voltage - Test:: 50 V

Current Rating (Amps):: 20A

Noise Figure:: -

Current - Test:: 250 mA

Power - Output:: 175W

Voltage - Rated:: 130 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: M174

SD2941-10R FAQ

1.How can I place an order for SD2941-10R through Aetrix?

Please submit a Request for Quotation (RFQ) for SD2941-10R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD2941-10R reliable?

The price and inventory of SD2941-10R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2941-10R is usually 5 days.

3.What payment methods are accepted for SD2941-10R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2941-10R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD2941-10R?

SD2941-10R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD2941-10R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD2941-10R?

For technical support, including SD2941-10R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2941-10R requirements.

6.How does Aetrix verify that SD2941-10R is sourced from the original manufacturer or authorized distributors?

All SD2941-10R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2941-10R meets industry standards.

7.What is the process for return or replacement of SD2941-10R?

All SD2941-10R units undergo pre-shipment inspection (PSI). If there is an issue with SD2941-10R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD2941-10R part is unused and in its original packaging.

Return procedure for SD2941-10R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…