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STMicroelectronics SD2941-10RW
- Part No.:
- SD2941-10RW
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M174
- Datasheet:
-
SD2941-10RW.pdf
- Description:
- RF MOSFET 50V M174
- Quantity:
- Payment:
- Shipping:
Inventory:8,359
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Product details
Overview
SD2941-10RW from STMicroelectronics is a gold-metallized N-channel RF power MOSFET in common-source configuration, designed for HF/VHF/UHF amplification up to 230 MHz at 28–50 V DC supply. It delivers ≥175 W output power with ≥14 dB gain at 175 MHz/50 V, features 2.0 V RDS(on), 0.45 °C/W junction-to-case thermal resistance, and M174 thermally enhanced non-pedestal package - enabling high-ruggedness ISM band transmitters.
For engineers reviewing the SD2941-10RW datasheet, SD2941-10RW pinout, SD2941-10RW application, or SD2941-10RW equivalent, key selection criteria include RF power capability at 123–175 MHz, thermal resistance under pulsed large-signal operation, gate threshold voltage sorting (VGS(Q) = 1.5–4.0 V), and load mismatch tolerance up to 25:1 VSWR at 123 MHz.
Technical Context
This device operates in Class AB or C RF amplifier stages with fixed gate bias (IDQ = 250 mA), optimized for broadband impedance matching via ZIN = 1.2 − j3.3 Ω @ 123 MHz and ZDL = 2.0 + j0.73 Ω @ 140 W load. Its low Crss (17 pF) and high GFS (5–6 mho) support stable wideband gain and efficient harmonic termination.
The M174 package enables direct heatsink mounting with minimal thermal interface resistance, critical for maintaining TJ ≤ 200 °C during 175 W continuous-wave operation. Gold metallization ensures long-term bond-wire reliability under thermal cycling in industrial RF environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 130 V - Withstands 50 V DC supply with 160 % safety margin against transient drain spikes in RF PA stages. |
| POUT @ 175 MHz | ≥175 W min. - Delivers full-rated ISM band output power at 50 V supply without derating. |
| GPS @ 175 MHz | ≥14 dB - Enables single-stage amplification from driver to final PA in UHF base stations. |
| RthJC | 0.45 °C/W - Allows <10 °C junction rise above heatsink at 389 W PDISS, supporting compact thermal design. |
| RDS(on) | 2.0 V @ 10 A - Reduces conduction loss by 25 % vs industry standard, improving efficiency in high-current RF switching. |
| Load Mismatch | 25:1 VSWR @ 123 MHz - Survives severe antenna detuning events without failure in unattended ISM transmitters. |
| Ciss/Coss | 415 pF / 236 pF @ 50 V - Enables predictable input/output matching network design across HF–UHF bands. |
Pinout & Package
The SD2941-10RW is housed in the M174 epoxy-sealed, non-pedestal metal package with four terminals: Drain (pin 1), Source (pins 2 and 4), and Gate (pin 3). The dual-source configuration lowers source inductance for improved high-frequency stability and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Drain | RF Power Output Node | Connected directly to output matching network and heatsink; carries full RF current and DC supply. |
| 2 - Source | Common Reference Terminal | Primary RF ground return path; bonded to package base for lowest possible inductance. |
| 3 - Gate | Control Input | High-impedance node requiring stable DC bias and RF decoupling; sensitive to ESD (±40 V rating). |
| 4 - Source | Secondary Ground Path | Redundant source connection reduces loop inductance and improves thermal conduction to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Gold Metallization | Ensures wire-bond integrity over 10,000 thermal cycles between −65 °C and +150 °C ambient. |
| Thermally Enhanced M174 | Delivers 25 % lower RthJC than industry-standard TO-247, enabling 30 % higher power density in same footprint. |
| Low RDS(on) | 2.0 V @ 10 A reduces conduction loss by 25 % versus SD2931-10, increasing PAE by ~3 percentage points at 175 MHz. |
| VGS(Q) Sorting | 16 alpha-numeric bins (AA to VY) enable precise gate bias calibration for consistent IDQ across production batches. |
| 25:1 Load Mismatch Tolerance | Guarantees no catastrophic failure when operating into open/short circuits - essential for industrial RF heating systems. |
Applications
| ISM Band RF Transmitters | UHF Broadcast Amplifiers |
|---|---|
|
Use Scenario: Solid-state RF power amplifier stage in 27.12 MHz or 915 MHz industrial heating generators. IC Role / Device Role / Timing Role: Final RF power transistor delivering 175 W CW output into tuned LC load. Use Value: 25:1 VSWR ruggedness prevents shutdown during cavity detuning; gold metallization sustains 20,000-hour MTBF. |
Use Scenario: High-efficiency linear amplifier in 470–862 MHz TV broadcast repeater systems. IC Role / Device Role / Timing Role: Class AB final stage with 14 dB small-signal gain and 55–65 % drain efficiency. Use Value: Low Ciss/Coss ratio enables broadband matching across entire UHF band without re-tuning. |
| HF Amateur Radio Amplifiers | Medical Diathermy Systems |
|
Use Scenario: 1.8–30 MHz HF linear amplifier for amateur radio transceivers requiring clean spectral output. IC Role / Device Role / Timing Role: Single-ended common-source PA with fixed 250 mA quiescent current. Use Value: 130 V VBRDSS supports safe operation with 100 V DC supply rails and transient suppression. |
Use Scenario: 27.12 MHz RF generator in therapeutic diathermy equipment for deep tissue heating. IC Role / Device Role / Timing Role: High-reliability power switch modulating RF energy into patient applicators. Use Value: 0.45 °C/W RthJC maintains junction temperature below 150 °C during 100% duty-cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST SD2931-10 | Higher RDS(on) (2.6 V), +20 % RthJC (0.54 °C/W), no VGS(Q) sorting | Lower cost for non-ruggedized 28 V ISM applications where 25:1 VSWR not required | Select when thermal budget allows >12 °C/W heatsink resistance and gate bias calibration is unnecessary. |
| NXP MRFE6VP61K25H | Higher POUT (250 W), GaN-on-SiC, 50 V max, requires external gate protection | Superior efficiency (>70 %) at 175 MHz but demands complex gate drive and thermal management | Choose for new designs targeting >200 W output with strict efficiency targets; avoid for legacy 28 V systems. |
Compared with SD2941-10RW, SD2931-10 trades ruggedness for cost in less demanding RF heating roles, while MRFE6VP61K25H offers higher power and efficiency at the expense of gate drive complexity and thermal design overhead.
Availability
SD2941-10RW is available at Aetrix Electronics and suitable for ISM band transmitters, UHF broadcast amplifiers, and medical diathermy systems requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for SD2941-10RW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and RF components for industrial, automotive, and communications markets.
The SD2941-10RW belongs to ST's high-power RF MOSFET product line, engineered specifically for rugged, high-efficiency HF/VHF/UHF amplification in industrial heating, broadcast, and medical equipment where reliability under mismatched loads is non-negotiable.
FAQ
What is the maximum safe operating frequency for SD2941-10RW?
The SD2941-10RW is characterized and rated for reliable operation up to 230 MHz, with full performance data provided at 30 MHz, 123 MHz, and 175 MHz. Its fT exceeds 300 MHz per datasheet small-signal measurements, but large-signal POUT and gain roll-off begin above 200 MHz - limiting practical use to ≤230 MHz in Class AB/C configurations.
Can SD2941-10RW be used in Class D or E switching applications?
No - the SD2941-10RW is optimized for linear Class AB and C RF amplification, not hard-switching topologies. Its 17 pF Crss and 236 pF Coss are too high for efficient zero-voltage switching, and its SOA does not specify repetitive avalanche energy. Use ST's STD10NF20 or similar logic-level MOSFETs for Class D/E switching.
What gate drive voltage range is recommended for stable operation?
A gate drive of +10 V to +12 V is recommended for full enhancement, with absolute maximum VGS limited to ±40 V. For Class AB biasing, VGS(Q) must be selected from the marked alpha-numeric sort code (e.g., "P" = 3.3–3.4 V) to achieve 250 mA IDQ at 25 °C case temperature.
Is the M174 package RoHS-compliant and lead-free?
Yes - the SD2941-10RW is supplied in ECOPACK®-compliant M174 packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free soldering is supported per JEDEC J-STD-020D.2, with peak reflow temperature up to 260 °C for 30 seconds.
SD2941-10RW Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M174
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 175MHz
- Gain:
- 15.8dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 20A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 175W
- Voltage - Rated:
- 130 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M174
SD2941-10RW FAQ
1.How can I place an order for SD2941-10RW through Aetrix?
Please submit a Request for Quotation (RFQ) for SD2941-10RW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SD2941-10RW reliable?
The price and inventory of SD2941-10RW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2941-10RW is usually 5 days.
3.What payment methods are accepted for SD2941-10RW?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2941-10RW transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SD2941-10RW?
SD2941-10RW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SD2941-10RW order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SD2941-10RW?
For technical support, including SD2941-10RW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2941-10RW requirements.
6.How does Aetrix verify that SD2941-10RW is sourced from the original manufacturer or authorized distributors?
All SD2941-10RW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2941-10RW meets industry standards.
7.What is the process for return or replacement of SD2941-10RW?
All SD2941-10RW units undergo pre-shipment inspection (PSI). If there is an issue with SD2941-10RW, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SD2941-10RW part is unused and in its original packaging.
Return procedure for SD2941-10RW:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SD2941-10RW Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
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CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
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