My Inquiry
My Account
STMicroelectronics SD2941-10W
- Part No.:
- SD2941-10W
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M174
- Datasheet:
-
SD2941-10W.pdf
- Description:
- RF MOSFET 50V M174
- Quantity:
- Payment:
- Shipping:
Inventory:69
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SD2941-10W from STMicroelectronics is a gold-metallized N-channel RF power MOSFET in M174 package, designed for HF/VHF/UHF amplifier stages in 28–50 V DC large-signal applications up to 230 MHz. It delivers ≥175 W output power at 175 MHz/50 V with 15 dB gain, features 0.45 °C/W junction-to-case thermal resistance, and achieves 25% lower RDS(on) than industry standard devices.
For engineers reviewing the SD2941-10W datasheet, SD2941-10W pinout, SD2941-10W application, or SD2941-10W equivalent, this page provides verified electrical specs, thermal performance data, ISM-band load-line impedance values, and real-world ruggedness metrics including 10:1 VSWR tolerance at 175 MHz and 25:1 at 123 MHz.
Technical Context
The SD2941-10W operates in common-source configuration with gate-controlled RF amplification, optimized for Class AB or Class C operation in fixed-tuned broadband amplifiers. Its low input capacitance (CISS = 415 pF) and high transconductance (GFS = 5–6 mho) support stable wideband matching across 30–230 MHz.
Thermally, it uses epoxy-sealed M174 packaging with direct-drain mounting and low-RthJC (0.45 °C/W), enabling high-power dissipation (PDISS = 389 W) while maintaining TJ ≤ 200 °C under continuous operation at rated POUT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 130 V - Withstands 130 V drain-source breakdown at TJ = 150 °C, supporting robust 50 V rail operation with margin. |
| POUT @ 175 MHz | 175 W min. - Delivers minimum 175 W RF output into matched load at 50 V, 250 mA IDQ, enabling high-efficiency ISM transmitters. |
| Gain @ 175 MHz | 14–15.8 dB - Provides sufficient small-signal gain to drive final stage without cascaded amplification in compact RF designs. |
| RthJC | 0.45 °C/W - Enables efficient heat transfer from die to heatsink, reducing junction temperature rise by ~25% vs. standard packages. |
| Load Mismatch Tolerance | 10:1 VSWR @ 175 MHz - Sustains full rated POUT under worst-case antenna mismatch, critical for industrial RF heating systems. |
| RDS(on) | 2.0 V @ 10 A - Low on-resistance minimizes conduction loss during pulsed or saturated operation, improving efficiency and thermal headroom. |
| CISS | 415 pF @ 50 V - Input capacitance value used directly in input matching network design for 123–175 MHz band coverage. |
Pinout & Package
The SD2941-10W is housed in the thermally enhanced M174 non-pedestal package - a 4-terminal, epoxy-sealed, low-profile metal-ceramic hybrid with direct-drain thermal path and flanged base for screw-mount heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Drain | RF Power Output / High-Power Current Path | Electrically and thermally connected to package flange; must be mounted to heatsink with low-thermal-resistance interface. |
| 2 - Source | Common Reference / RF Ground Return | Primary current return path; tied to ground plane in amplifier layout to minimize parasitic inductance and improve stability. |
| 3 - Gate | RF Signal Input / Amplifier Control Node | High-impedance control terminal requiring ESD protection and controlled-impedance gate bias network to prevent oscillation. |
| 4 - Source | Secondary Source Connection / Thermal & Current Redundancy | Dual-source terminals reduce source inductance and improve thermal spreading; both must be bonded to ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Gold metallization | Ensures long-term bond-wire reliability and corrosion resistance in high-humidity or high-temperature industrial environments. |
| Thermally enhanced M174 packaging | Reduces RthJC by 25% vs. industry standard, allowing higher sustained POUT without derating in compact enclosures. |
| Common-source configuration | Supports standard RF amplifier topologies with predictable input/output impedance behavior and simplified matching network design. |
| 25% lower RDS(on) vs. industry standard | Directly improves conduction efficiency and reduces die self-heating, extending device lifetime in continuous-duty RF heating applications. |
| 20% higher PSAT vs. SD2931-10 | Enables higher output compression point and broader linear dynamic range in transmitter final stages compared to predecessor. |
Applications
| ISM RF Heating Systems | UHF Broadcast Transmitters |
|---|---|
|
Use Scenario: Industrial microwave generators operating at 27.12 MHz or 915 MHz for plastic welding, food processing, and medical sterilization. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 135–175 W into tuned cavity loads with high duty-cycle operation. Use Value: 10:1 VSWR tolerance ensures uninterrupted operation despite load variations caused by material moisture content changes. |
Use Scenario: Solid-state UHF TV transmitters (470–862 MHz) requiring high-reliability, air-cooled final amplifiers. IC Role / Device Role / Timing Role: Class AB driver or final amplifier stage operating at 28 V or 50 V supply rails with broadband impedance matching. Use Value: 0.45 °C/W RthJC enables stable thermal performance in fan-cooled cabinets without liquid cooling infrastructure. |
| HF Amateur Radio Amplifiers | RF Plasma Generators |
|
Use Scenario: 1.8–30 MHz linear amplifiers for amateur radio operators requiring clean spectral output and high IMD rejection. IC Role / Device Role / Timing Role: High-linearity RF power transistor biased at 250 mA quiescent current for low-distortion SSB/CW operation. Use Value: 14–15.8 dB gain at 175 MHz simplifies driver stage design and reduces overall amplifier complexity. |
Use Scenario: 13.56 MHz plasma ignition and sustainment systems used in semiconductor manufacturing and surface treatment. IC Role / Device Role / Timing Role: Switching-mode RF power switch operating in Class D or E topology with fast turn-on/turn-off characteristics. Use Value: Gold metallization prevents intermetallic degradation under high-current RF cycling, ensuring >100,000-hour MTBF. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST SD2931-10 | Higher RthJC (0.60 °C/W), lower POUT (140 W typ. @ 175 MHz), 20% lower PSAT | Less suitable for continuous-duty ISM heating where thermal headroom is constrained | Select SD2941-10W when thermal management is limited or output power margin is required. |
| NXP MRFE6VP61K25H | Higher VBRDSS (160 V), higher POUT (250 W), but larger TO-272 package and no gold metallization | Better for 100+ W broadcast applications; less rugged in humid/plasma environments | Choose MRFE6VP61K25H only if voltage headroom >130 V or output >175 W is mandatory. |
Compared with SD2931-10 and MRFE6VP61K25H, the SD2941-10W uniquely balances high power density (175 W in M174), industry-leading thermal resistance (0.45 °C/W), and gold-based reliability-making it optimal for space-constrained, high-ruggedness ISM and industrial RF systems.
Availability
SD2941-10W is available at Aetrix Electronics and suitable for ISM RF heating systems, UHF broadcast transmitters, and HF amateur radio amplifiers requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for SD2941-10W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.
The SD2941-10W belongs to ST's high-power RF MOSFET product line, engineered specifically for rugged, high-efficiency amplifier stages in industrial RF energy applications up to 230 MHz.
FAQ
What is the maximum safe operating frequency for SD2941-10W?
The SD2941-10W is characterized and specified for operation up to 230 MHz, with full performance data provided at 30 MHz, 123 MHz, and 175 MHz. While usable beyond 230 MHz, gain and efficiency degrade rapidly above this point due to parasitic capacitance and package limitations; ST does not guarantee performance above 230 MHz.
Can SD2941-10W be operated at 28 V and still deliver 175 W output?
No - 175 W minimum output is specified only at 50 V supply with 250 mA quiescent drain current. At 28 V, the typical POUT is 135 W (123 MHz), reflecting reduced voltage headroom and lower saturation power; attempting 175 W at 28 V would exceed safe operating area limits.
Is the M174 package RoHS-compliant and lead-free?
Yes - the SD2941-10W is offered in ECOPACK®-compliant M174 packaging, meeting EU Directive 2002/95/EC (RoHS) requirements. The device uses lead-free terminations and halogen-free epoxy molding compound, with full compliance documentation available via ST's quality portal.
How is gate threshold voltage (VGS(Q)) sorted and marked on SD2941-10W?
VGS(Q) is sorted in 0.1 V increments across 26 alpha/numeric codes (e.g., AA = 1.5–1.6 V, U = 3.8–3.9 V) and laser-marked on the package per Table 6 and Figure 16. The "W" suffix in SD2941-10W indicates wafer process code, not VGS sort - actual VGS(Q) code appears separately as a 1–2 character marking adjacent to the part number.
SD2941-10W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M174
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 175MHz
- Gain:
- 15.8dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 20A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 175W
- Voltage - Rated:
- 130 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M174
SD2941-10W FAQ
1.How can I place an order for SD2941-10W through Aetrix?
Please submit a Request for Quotation (RFQ) for SD2941-10W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SD2941-10W reliable?
The price and inventory of SD2941-10W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD2941-10W is usually 5 days.
3.What payment methods are accepted for SD2941-10W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD2941-10W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SD2941-10W?
SD2941-10W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SD2941-10W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SD2941-10W?
For technical support, including SD2941-10W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD2941-10W requirements.
6.How does Aetrix verify that SD2941-10W is sourced from the original manufacturer or authorized distributors?
All SD2941-10W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD2941-10W meets industry standards.
7.What is the process for return or replacement of SD2941-10W?
All SD2941-10W units undergo pre-shipment inspection (PSI). If there is an issue with SD2941-10W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SD2941-10W part is unused and in its original packaging.
Return procedure for SD2941-10W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SD2941-10W Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
