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STMicroelectronics SD4933MR

Part No.:
SD4933MR
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
M177
Datasheet:
AetrixSD4933MR.pdf
Description:
RF MOSFET 50V M177
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:40

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Product details

Overview

SD4933MR from STMicroelectronics is an N-channel DMOS RF power transistor designed for 50 V ISM-band amplifiers up to 100 MHz. It delivers ≥300 W output power with ≥24 dB gain at 30 MHz, supports 20:1 all-phase load mismatch, and features moisture-resistant M177MR packaging rated for operation under extreme humidity and thermal cycling. Used in industrial RF heating and plasma generation systems.

For engineers reviewing the SD4933MR datasheet, SD4933MR pinout, SD4933MR application, or SD4933MR equivalent, key selection criteria include its 200 V V(BR)DSS rating, 0.27 °C/W RthJC, 20:1 VSWR tolerance, and moisture-resistant M177MR package - critical for high-reliability RF power stages in harsh environments.

Technical Context

The SD4933MR employs a ruggedized DMOS structure with enhanced avalanche energy rating (1200 mJ) and thermal stability up to 200 °C junction temperature. Its gate threshold voltage (2.5–3.75 V) and transconductance (8–14 S) are binned across 24 VGS/GFS sort codes (e.g., E4–I9), enabling precise gain matching in push-pull or parallel configurations.

Dynamic performance is characterized at 30 MHz with 50 V supply and 250 mA quiescent drain current, delivering 50–58% drain efficiency and stable impedance (Zin = 1.6 – j5.0 Ω, Zdl = 3.3 + j1.0 Ω). The device operates in Class AB or C amplifier topologies with external bias networks and broadband matching.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 200 V minimum - ensures safe operation under 50 V rail with transient overvoltage margin in ISM amplifiers
POUT @ 30 MHz ≥300 W - enables single-device RF heating at industrial power levels without paralleling
Gain @ 30 MHz 20–24 dB - reduces driver-stage complexity in 30–100 MHz broadband amplifiers
RthJC 0.27 °C/W - allows direct heatsink mounting with minimal thermal interface resistance for high-power dissipation
Load Mismatch 20:1 VSWR across all phase angles - sustains full output power into reactive loads common in plasma and induction heating
Moisture Resistance ECOPACK®-qualified M177MR epoxy-sealed package - prevents parametric shift or corrosion in humid industrial enclosures
ID max 40 A continuous - supports high-current RF switching with low conduction loss (VDS(ON) ≤ 4.0 V @ 20 A)

Pinout & Package

M177MR is a 5-terminal plastic power package with exposed drain pad for thermal management and moisture-resistant epoxy sealing. Dimensions: 28.96 mm × 22.10 mm × 4.32 mm (L×W×H), with 5.97 mm lead pitch and 2.74 mm terminal width.

Pin/Terminal Circuit Role Design Meaning
1 Drain Main RF power output path; electrically and thermally connected to exposed metal pad on bottom of package
2 Source Common return for RF and DC paths; used as ground reference for gate drive and output matching
3 Gate High-impedance control input; requires stable DC bias and RF decoupling to prevent oscillation
4 Source Dedicated source terminal for Kelvin sensing or separate grounding to reduce source inductance in high-frequency layouts
5 Source Third source terminal supporting multi-point grounding for improved thermal and RF stability in high-power PCBs

Key Features

Feature Design Value
200 V breakdown voltage Enables reliable 50 V rail operation with >4× safety margin against switching transients in RF amplifiers
20:1 all-phase VSWR tolerance Eliminates need for circulators or automatic load-matching networks in variable-impedance ISM loads
0.27 °C/W thermal resistance Permits >600 W peak dissipation with <15 °C case-to-junction rise at 648 W continuous rating
Binned VGS/GFS sorting 24 discrete sort codes (E4–I9) allow matched-pair selection for push-pull amplifier symmetry and gain consistency
Moisture-resistant M177MR Qualified per JESD22-A112A; maintains parameter stability after 168 hr 85 °C/85% RH exposure

Applications

RF Industrial Heating Plasma Generation

Use Scenario: Induction heating of metal components in manufacturing lines operating continuously at 27.12 MHz or 40.68 MHz.

IC Role / Device Role / Timing Role: Final RF power stage transistor delivering 300+ W into tuned LC tank circuits.

Use Value: 20:1 VSWR tolerance maintains full output during workpiece loading/unloading without protection shutdown.

Use Scenario: RF-excited plasma chambers for semiconductor etching or surface treatment at 13.56 MHz.

IC Role / Device Role / Timing Role: High-efficiency Class C amplifier driving capacitive plasma load with dynamic impedance variation.

Use Value: Moisture-resistant M177MR package prevents parameter drift in high-humidity cleanroom environments.

ISM Band Amplifiers RF Plasma Ignition

Use Scenario: Solid-state replacement for vacuum tube amplifiers in 50 V, 30–100 MHz ISM equipment.

IC Role / Device Role / Timing Role: Single-ended or push-pull RF power transistor with external broadband matching network.

Use Value: 24 dB gain reduces driver-stage complexity while 58% efficiency minimizes heatsink size and cooling cost.

Use Scenario: High-reliability ignition source for combustion systems using pulsed RF plasma in automotive or aerospace test rigs.

IC Role / Device Role / Timing Role: Fast-switching RF power switch delivering high peak power pulses at 2–30 MHz.

Use Value: 1200 mJ avalanche energy rating withstands repeated arc-induced voltage spikes without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
BLF188XR Higher POUT (400 W @ 30 MHz), but lower V(BR)DSS (160 V); requires tighter supply regulation Preferred for higher-power 30 MHz amplifiers where 50 V rail stability is guaranteed Select BLF188XR only if system can maintain ±1% VDD regulation and derate for 160 V breakdown margin
PD85003-E Lower gain (18 dB @ 30 MHz), higher RthJC (0.35 °C/W); same M177 package footprint Suitable for cost-sensitive designs accepting 2–3 dB gain penalty and larger heatsink area Choose PD85003-E when thermal design margin exists and gain compression is acceptable in final stage

Compared with BLF188XR and PD85003-E, the SD4933MR uniquely balances 200 V ruggedness, 20:1 VSWR tolerance, and moisture resistance - making it the only option qualified for uncontrolled-humidity industrial RF heating without external protection circuitry.

Availability

SD4933MR is available at Aetrix Electronics and suitable for RF industrial heating, plasma generation, ISM band amplifiers, and RF plasma ignition requiring stable component supply across extended production lifecycles.

Supply support for SD4933MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial and automotive markets.

The SD4933MR belongs to ST's high-voltage RF power MOSFET product line, engineered specifically for rugged, high-efficiency amplification in industrial ISM-band applications demanding reliability under thermal and environmental stress.

FAQ

What is the maximum continuous drain current rating for SD4933MR?

The SD4933MR is rated for 40 A continuous drain current at TCASE = 25 °C, as specified in Table 2 of the production datasheet (DocID023664 Rev 3). This rating assumes proper heatsinking to maintain case temperature within limits; actual usable current depends on thermal design and ambient conditions.

Does SD4933MR require external gate protection diodes?

No - the SD4933MR integrates gate protection via internal clamping structures, and its ±20 V VGS rating (Table 2) permits direct connection to standard ±15 V gate drivers. External Zener diodes are unnecessary unless operating beyond datasheet VGS limits or in ultra-high-noise environments.

Can SD4933MR be operated at frequencies above 100 MHz?

No - the device is characterized and specified only up to 100 MHz per its official description and typical performance data. Gain, efficiency, and stability degrade significantly above this frequency; ST does not guarantee performance or reliability beyond 100 MHz.

Is the M177MR package lead-free and RoHS-compliant?

Yes - the M177MR package is ECOPACK®-qualified and fully compliant with the 2002/95/EEC RoHS directive, as confirmed in the "Features" section of the datasheet and ECOPACK® documentation available at www.st.com.

SD4933MR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
M177
Packaging:
Tray
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel
Frequency:
30MHz
Gain:
24dB
Voltage - Test:
50 V
Current Rating (Amps):
40A
Noise Figure:
-
Current - Test:
250 mA
Power - Output:
300W
Voltage - Rated:
200 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
M177

SD4933MR FAQ

1.How can I place an order for SD4933MR through Aetrix?

Please submit a Request for Quotation (RFQ) for SD4933MR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD4933MR reliable?

The price and inventory of SD4933MR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD4933MR is usually 5 days.

3.What payment methods are accepted for SD4933MR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD4933MR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD4933MR?

SD4933MR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD4933MR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD4933MR?

For technical support, including SD4933MR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD4933MR requirements.

6.How does Aetrix verify that SD4933MR is sourced from the original manufacturer or authorized distributors?

All SD4933MR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD4933MR meets industry standards.

7.What is the process for return or replacement of SD4933MR?

All SD4933MR units undergo pre-shipment inspection (PSI). If there is an issue with SD4933MR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD4933MR part is unused and in its original packaging.

Return procedure for SD4933MR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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