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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics SD56060

Name: SD56060
Brand: STMicroelectronics
SKU: SD56060
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SD56060

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: M246

Datasheet:: SD56060.pdf

Description:: RF MOSFET LDMOS M246

Quantity:: RFQ Add To RFQ list

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Inventory:5,509

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Product details

Overview

SD56060 from STMicroelectronics is a common-source N-channel enhancement-mode lateral LDMOS RF power transistor optimized for broadband operation up to 1 GHz at 28 V supply, delivering 60 W output power with 16 dB gain and 60% drain efficiency at 860 MHz in ground/air communication and ISM band applications.

For engineers reviewing the SD56060 datasheet, SD56060 pinout, SD56060 application, or SD56060 equivalent, this device requires attention to gate bias stability, thermal resistance (0.875 °C/W), VSWR tolerance (5:1), and dual-gate/dual-drain layout for push-pull amplifier design.

Technical Context

The SD56060 implements a dual-gate, dual-drain common-source push-pull configuration with isolated source terminals on the bottom side, enabling balanced RF amplification without external combiners. Its lateral LDMOS structure supports high ruggedness (V_DS = 65 V, T_J = 200 °C) and stable transconductance (1.8 S) across temperature.

It operates with fixed 100 mA quiescent drain current per side and exhibits low feedback capacitance (C_rss = 34 pF) and input capacitance (C_iss = 58 pF) at 28 V, supporting broadband impedance matching from HF through 1 GHz without harmonic traps.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	DC to 1 GHz - supports ISM 915 MHz, airband 860–870 MHz, and HF/VHF broadband amplifiers
Output Power (POUT)	60 W at 860 MHz - sufficient for Class AB linear amplifiers in mobile base stations and repeaters
Power Gain (GPS)	16 dB typical at 60 W - enables single-stage amplification from +10 dBm driver to +48 dBm output
Drain Efficiency (ηD)	60% at POUT = 60 W - reduces heatsink size and DC power draw vs. GaN alternatives at same frequency
Thermal Resistance (RthJC)	0.875 °C/W - mandates direct copper mounting to heatsink; compatible with standard M246 thermal interface pads
VSWR Tolerance	5:1 at all phases - survives antenna mismatch events without degradation in deployed communication systems
Intermodulation (IMD3)	−28 dBC at PEP - meets spectral mask requirements for two-tone LTE/5G FDD signals in ISM infrastructure

Pinout & Package

The SD56060 is housed in the M246 thermally enhanced ceramic/metal package (22.86 mm × 29.08 mm × 5.08 mm), featuring an exposed copper source pad on the bottom side for direct thermal attachment and five surface-mount terminals on the top side.

Pin/Terminal	Circuit Role	Design Meaning
1 Drain A	RF output node for first transistor half	Connected to one arm of push-pull output balun; requires 50 Ω microstrip routing and EMI shielding
2 Drain B	RF output node for second transistor half	Paired with Pin 1 for differential-to-single-ended conversion; phase-matched trace length critical
3 Source (bottom)	Common RF ground and thermal path	Must be soldered to large copper pour or heatsink; not electrically accessible on top side
4 Gate B	RF input control for second transistor half	Bias network must match 50 Ω; gate stopper resistor recommended per ST test circuit R5/R6 (25 Ω)
5 Gate A	RF input control for first transistor half	Independent gate biasing allows amplitude/phase trimming; matched to Gate B for symmetry

Key Features

Feature	Design Value
BeO-free ceramic package	Eliminates beryllium oxide toxicity risk while maintaining 0.875 °C/W thermal resistance for industrial compliance
Common-source push-pull topology	Enables even-harmonic cancellation and >20 dBc IMD3 suppression without external circulators or isolators
Gate voltage stability over temperature	V_GS(Q) drift < ±0.04 V from −25 °C to 100 °C - reduces need for active bias compensation circuits
High V_DS rating (65 V)	Supports 28 V operation with 2.3× voltage margin - withstands transient spikes in airborne RF power supplies
Low C_rss/C_iss ratio (34/58 pF)	Improves unconditional stability in wideband designs - avoids need for lossy stabilization networks

Applications

Ground-Based Mobile Radio

Airborne Transceiver

Use Scenario: 860–870 MHz land-mobile radio repeater in emergency response vehicle.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier driving 50 Ω coaxial feed to roof-mounted antenna.

Use Value: 60 W output sustains link budget over 15 km range; 5:1 VSWR tolerance prevents shutdown during antenna flex or vibration.

Use Scenario: Line-of-sight air-to-ground data link in UAV telemetry system.

IC Role / Device Role / Timing Role: High-efficiency PA in compact S-band transceiver module operating at 860 MHz.

Use Value: 60% drain efficiency minimizes battery drain; M246 package enables conduction-cooled mounting to aluminum airframe.

ISM Band Industrial Heater

UHF RFID Reader Amplifier

Use Scenario: 915 MHz RF energy source for plasma generation in semiconductor chamber cleaning.

IC Role / Device Role / Timing Role: Continuous-wave RF power stage delivering stable 60 W into reactive plasma load.

Use Value: 200 °C max junction temperature and 65 V V_DS rating ensure reliability under sustained overvoltage and thermal stress.

Use Scenario: High-power UHF RFID reader operating at 860–868 MHz with EIRP > 33 dBm.

IC Role / Device Role / Timing Role: Linear PA stage preceding circulator and antenna switch in multi-protocol reader.

Use Value: 16 dB small-signal gain reduces driver stage complexity; −28 dBC IMD3 maintains ETSI spectral mask compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6VP2600HR5	Higher POUT (600 W), GaN-on-SiC, 28 V, R_thJC = 0.25 °C/W, but requires complex gate bias sequencing	Targeted at macro-cell base stations; overqualified for portable/ISM use	Select only if >100 W output and sub-0.3 °C/W thermal resistance are mandatory
PD57060-E	LDMOS, same 60 W/28 V/860 MHz spec, but M248 package (larger footprint), R_thJC = 0.95 °C/W	Compatible PCB layout but needs larger heatsink area due to higher thermal resistance	Choose when M248 board compatibility exists and minor efficiency penalty (58% vs. 60%) is acceptable

Compared with MRF6VP2600HR5 and PD57060-E, the SD56060 offers optimal balance of thermal performance (0.875 °C/W), proven ruggedness in mobile environments, and simplified biasing-making it preferred for compact, conduction-cooled ISM and airborne transceivers where GaN complexity or M248 footprint is prohibitive.

Availability

SD56060 is available at Aetrix Electronics and suitable for ground/air communication systems, ISM band industrial heaters, and UHF RFID readers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SD56060 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and RF components for industrial, automotive, and communications markets.

The SD56060 belongs to ST's LDMOS RF power transistor product line, engineered specifically for rugged, high-efficiency broadband amplification in commercial and industrial wireless infrastructure below 1 GHz.

FAQ

What is the recommended gate bias voltage for linear operation at 60 W?

The SD56060 requires V_GS(Q) = 2.8–5.0 V per side at I_DQ = 100 mA to achieve optimal linearity and efficiency at 60 W output. ST's reference design uses 3.6 V with temperature-compensated resistive divider (R1/R2) and bypass capacitors (C11/C12) to suppress gate oscillation.

Can SD56060 operate safely at 32 V drain supply?

No. Although V_DS absolute maximum rating is 65 V, the device is characterized and qualified only at 28 V. Operating above 28 V violates ST's specified test conditions and voids guaranteed POUT, gain, and efficiency specs; thermal runaway risk increases significantly above rated V_DD.

Is the M246 package lead-free and RoHS compliant?

Yes. The SD56060 M246 package carries ECOPACK2 certification (e4 level), confirming lead-free terminations, halogen-free molding compound, and full RoHS 2011/65/EU compliance. Marking includes "e4" and country-of-origin code per ST's marking specification in DS11102 Rev 2.

How does the bottom-side source connection affect PCB layout?

The source terminal is exclusively on the bottom-side copper pad and must be soldered directly to a solid thermal plane or heatsink. Top-side traces must avoid covering the source area; thermal vias (≥8× 0.3 mm) are required beneath the pad to transfer heat to inner layers, per ST's M246 mechanical data and thermal guidelines in DS11102.

SD56060 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: M246

Packaging:: Box

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 1MHz ~ 1GHz

Gain:: 16dB

Voltage - Test:: -

Current Rating (Amps):: 8A

Noise Figure:: -

Current - Test:: -

Power - Output:: 60W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: M246

SD56060 FAQ

1.How can I place an order for SD56060 through Aetrix?

Please submit a Request for Quotation (RFQ) for SD56060 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD56060 reliable?

The price and inventory of SD56060 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD56060 is usually 5 days.

3.What payment methods are accepted for SD56060?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD56060 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD56060?

SD56060 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD56060 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD56060?

For technical support, including SD56060 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD56060 requirements.

6.How does Aetrix verify that SD56060 is sourced from the original manufacturer or authorized distributors?

All SD56060 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD56060 meets industry standards.

7.What is the process for return or replacement of SD56060?

All SD56060 units undergo pre-shipment inspection (PSI). If there is an issue with SD56060, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD56060 part is unused and in its original packaging.

Return procedure for SD56060:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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