STMicroelectronics SD56150

Overview

SD56150 from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband TV broadcast amplifiers up to 1.0 GHz. It delivers 150 W output power at 860 MHz with 13 dB gain and 50% drain efficiency under 32 V supply, features internal input matching, and uses a BeO-free M252 ceramic-metal package.

For engineers reviewing the SD56150 datasheet, SD56150 pinout, SD56150 application, or SD56150 equivalent, key selection criteria include its 65 V V(BR)DSS rating, 0.55 °C/W junction-to-case thermal resistance, push-pull configuration capability, and linearity performance in UHF broadcast transmitters.

Technical Context

The SD56150 operates in common-source mode with dual-drain/dual-gate layout optimized for push-pull amplifier stages. Its lateral MOSFET structure enables high thermal stability and broadband impedance matching without external input networks.

Designed for fixed-bias Class AB operation at 32 V, it achieves 10:1 load mismatch tolerance and exhibits measured ZIN = 4.7 − j5.5 Ω at 860 MHz - enabling direct integration into 50 Ω TV transmitter final stages with minimal external tuning.

Key Specifications

Pinout & Package

The SD56150 is housed in the M252 (.400 × .860 inch, 4-lead balanced, hermetically sealed ceramic-metal package with flange), featuring dual symmetric drain and gate terminals for push-pull configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF151G and BLF188XR, the SD56150 uniquely combines internal input matching, BeO-free packaging, and optimized 32 V operation - making it the most integrated solution for cost-sensitive, space-constrained UHF broadcast amplifier designs requiring rapid time-to-market.

Availability

SD56150 is available at Aetrix Electronics and suitable for UHF TV broadcast transmitters, CATV headend amplifiers, industrial RF heaters, and plasma generators requiring stable component supply and long-term obsolescence management.

Supply support for SD56150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

The SD56150 belongs to ST's LdmoST family of lateral DMOS RF power transistors, engineered specifically for high-linearity, high-efficiency UHF broadcast and broadband industrial RF amplification.

FAQ

Is the SD56150 still in active production?

No - STMicroelectronics has marked the SD56150 as obsolete per its official product status documentation (Rev 7, August 2007). However, Aetrix Electronics maintains legacy inventory with full traceability and offers extended lifecycle support including cross-reference engineering and drop-in alternatives where technically validated.

What is the recommended gate bias for Class AB operation?

The datasheet specifies VGS(Q) = 2.0–5.0 V at ID = 100 mA and VDS = 28 V. For stable 500 mA quiescent drain current in push-pull configuration, a typical gate bias of +3.8 V DC per gate terminal is used with temperature-compensated bias networks to maintain IDQ stability over 0–70 °C ambient.

Can the SD56150 be used below 860 MHz, e.g., at 450 MHz?

Yes - the device is characterized up to 1.0 GHz and exhibits usable gain and efficiency down to 400 MHz. At 450 MHz, typical POUT is 140 W with 14.5 dB gain and 52% efficiency (per extrapolated test data and impedance trends in Table 6); external output matching is required for optimal performance.

Does the M252 package require soldering to a copper heatsink?

Yes - the M252 package flange is electrically connected to the source (Pin 3) and must be mounted directly to a grounded copper heatsink using thermally conductive, electrically insulating mounting hardware. A minimum clamping force of 25 lbf and thermal interface material with ≤0.15 °C·in²/W resistance is required to achieve the specified 0.55 °C/W RthJC.