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STMicroelectronics SD57120
- Part No.:
- SD57120
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M252
- Datasheet:
-
SD57120.pdf
- Description:
- RF MOSFET LDMOS 28V M252
- Quantity:
- Payment:
- Shipping:
Inventory:3,379
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Product details
Overview
SD57120 from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband base station amplifiers up to 1.0 GHz. It delivers 120 W output power at 960 MHz with 13 dB power gain and 50% drain efficiency at 28 V supply, housed in a BeO-free M252 hermetic package with internal input matching.
For engineers reviewing the SD57120 datasheet, SD57120 pinout, SD57120 application, or SD57120 equivalent, key selection criteria include its 65 V V(BR)DSS rating, 0.55 °C/W junction-to-case thermal resistance, 14 A continuous drain current capability, and proven linearity under 10:1 load mismatch conditions in cellular infrastructure designs.
Technical Context
The SD57120 operates in common-source configuration with internal input matching networks optimized for 945–980 MHz band operation. Its lateral LDMOS architecture provides stable gain (13–14 dB typ.) and high intermodulation suppression (IMD3 ≤ –40 dBc at POUT = 120 W PEP), enabling use in Class AB linear amplifier stages.
Thermal design is enabled by low RthJC (0.55 °C/W) and a 200 °C maximum junction temperature, supporting high-reliability deployment in air- or liquid-cooled macro base station final stages. The device exhibits robust load mismatch tolerance (10:1 VSWR at all phase angles) without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 960 MHz | 120 W - Sufficient for multi-carrier UMTS/LTE macro base station final stage output |
| Power Gain | 13 dB - Enables single-stage amplification with minimal driver stage complexity |
| V(BR)DSS | 65 V - Supports 28 V rail operation with margin for transient voltage spikes |
| RthJC | 0.55 °C/W - Allows >200 W dissipation with ≤120 °C case temperature under forced-air cooling |
| ID (continuous) | 14 A - Sustains peak current demands of high-PAPR OFDMA signals |
| IMD3 @ 120 W | ≤ –40 dBc - Meets ACPR requirements for 2×20 MHz LTE FDD deployments |
| ZIN @ 960 MHz | 3.9 + j4.6 Ω - Matches standard 50 Ω system impedance with minimal external tuning |
Pinout & Package
The SD57120 is housed in the M252 (.400 × .860 inch) 5-terminal hermetically sealed ceramic/metal package with integral flange for direct heatsink mounting and dual drain leads for low-inductance current return.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 - Drain | High-current RF output node | Dual parallel drain terminals reduce lead inductance and improve thermal spreading to heatsink |
| 3 - Source | RF ground reference and bias return | Common-source configuration requires low-impedance source connection to minimize stability risk |
| 4, 5 - Gate | RF input control terminal | Dual gate pins support balanced drive or simplified single-ended layout with internal matching |
Key Features
| Feature | Design Value |
|---|---|
| BeO-free packaging | Eliminates beryllium oxide toxicity concerns while maintaining 0.55 °C/W thermal resistance |
| Internal input matching | Reduces external matching network to only output tuning, cutting BOM count and board area |
| 10:1 load mismatch tolerance | Enables operation into VSWR >3:1 without protection circuitry or gain rollback in deployed systems |
| Excellent thermal stability | Gain drift <0.1 dB/°C over 25–125 °C case temperature range ensures consistent linearity |
| Lateral LDMOS structure | Provides inherent ruggedness against avalanche and secondary breakdown during fault conditions |
Applications
| Macro Base Station PA | Public Safety Radio Amplifier |
|---|---|
|
Use Scenario: Final-stage RF power amplifier in 900 MHz cellular base stations supporting multi-carrier UMTS and LTE. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor operating in Class AB mode with internal input matching. Use Value: Delivers 120 W POUT with –40 dBc IMD3 at full power, meeting 3GPP ACLR requirements without digital predistortion overhead. |
Use Scenario: High-reliability RF final amplifier in land-mobile radio repeaters for emergency response networks. IC Role / Device Role / Timing Role: Common-source LDMOS transistor delivering broadband gain and ruggedness across 806–960 MHz public safety bands. Use Value: Withstands 10:1 VSWR at all phase angles and maintains 50% drain efficiency, ensuring uninterrupted operation during antenna detuning events. |
| ISM Band Industrial Heater | Broadband Test Equipment PA |
|
Use Scenario: Solid-state RF generator for 915 MHz industrial heating systems requiring continuous 100+ W output. IC Role / Device Role / Timing Role: High-power switching transistor biased for continuous-wave operation with thermal derating management. Use Value: 200 °C max junction temperature and 0.55 °C/W RthJC enable stable 120 W CW output with passive heatsinking in enclosed enclosures. |
Use Scenario: Output stage in programmable RF signal generators and lab-grade power amplifiers covering 800–1000 MHz. IC Role / Device Role / Timing Role: Broadband RF power transistor with predictable ZIN/ZOUT for repeatable gain flatness and calibration traceability. Use Value: Input impedance of 3.9 + j4.6 Ω at 960 MHz simplifies 50 Ω system integration and reduces calibration uncertainty across frequency sweeps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2150N | Higher POUT (150 W), higher V(BR)DSS (135 V), but larger M243 package and no internal input matching | Requires full external matching network; suited for higher-voltage 50 V systems | Select when >135 V supply or >150 W output is required; accept added PCB area and tuning complexity |
| PD57018 | Lower POUT (100 W), same M252 package, 28 V optimized, includes integrated ESD protection on gate | Better gate ruggedness for prototyping environments; slightly reduced output headroom | Select for cost-sensitive or lower-power macro sites where gate ESD immunity is prioritized over peak output |
Compared with MRF6V2150N and PD57018, the SD57120 uniquely balances 120 W output, internal input matching, and BeO-free reliability in the compact M252 package-making it optimal for space-constrained, thermally demanding 28 V base station final stages.
Availability
SD57120 is available at Aetrix Electronics and suitable for macro base station power amplifiers, public safety radio transmitters, ISM industrial heating systems, and broadband RF test equipment requiring stable component supply and long-lifecycle support.
Supply support for SD57120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, and RF components for industrial, automotive, and communications markets.
The SD57120 belongs to ST's LdmoST RF power transistor family, engineered specifically for high-efficiency, high-linearity broadband amplification in cellular infrastructure and critical wireless systems.
FAQ
What is the recommended gate bias voltage for linear operation at 120 W POUT?
The SD57120 achieves optimal linearity at 120 W with IDQ = 800 mA, corresponding to VGS(Q) = 2.0–5.0 V per datasheet Table 4. For production stability, a fixed VGS of 3.2 V is commonly used with feedback regulation to maintain constant quiescent current across temperature.
Does the SD57120 require external input matching components?
No-the SD57120 integrates internal input matching capacitors (CISS includes input matching Moscap, per Table 4 footnote). Only output matching is required; typical designs use a 3-element L-network or microstrip transformer to transform 3.24 − j4.74 Ω to 50 Ω at 960 MHz.
Can the SD57120 be operated safely at 32 V DC supply?
No-absolute maximum V(BR)DSS is 65 V, but the device is characterized and qualified only at 28 V. Operation above 28 V violates ST's specified test conditions and voids reliability guarantees; thermal and gain performance are not validated beyond 28 V.
What is the maximum allowable case temperature for continuous 120 W operation?
At 120 W POUT and 50% efficiency, power dissipation is ~120 W. With RthJC = 0.55 °C/W, ΔTJC = 66 °C. To stay below TJ(max) = 200 °C, TCASE must not exceed 134 °C-practically limited to ≤110 °C for long-term reliability per ST's lifetime models.
SD57120 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M252
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 960MHz
- Gain:
- 14dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 14A
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 120W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M252
SD57120 FAQ
1.How can I place an order for SD57120 through Aetrix?
Please submit a Request for Quotation (RFQ) for SD57120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SD57120 reliable?
The price and inventory of SD57120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD57120 is usually 5 days.
3.What payment methods are accepted for SD57120?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD57120 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SD57120?
SD57120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SD57120 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SD57120?
For technical support, including SD57120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD57120 requirements.
6.How does Aetrix verify that SD57120 is sourced from the original manufacturer or authorized distributors?
All SD57120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD57120 meets industry standards.
7.What is the process for return or replacement of SD57120?
All SD57120 units undergo pre-shipment inspection (PSI). If there is an issue with SD57120, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SD57120 part is unused and in its original packaging.
Return procedure for SD57120:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SD57120 Tags
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