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STMicroelectronics SGSD100

Part No.:
SGSD100
Manufacturer:
STMicroelectronics
Category:
Single Bipolar Transistors
Package:
TO-247-3
Datasheet:
AetrixSGSD100.pdf
Description:
TRANS NPN DARL 80V 25A TO-247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,484

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Product details

Overview

SGSD100 from STMicroelectronics is an epitaxial-base NPN power Darlington transistor in monolithic configuration, rated for 80 V VCEO, 25 A continuous collector current, and 130 W total dissipation at TC ≤ 25°C, used as a high-current switch or audio output stage in TO-247 package.

For engineers reviewing the SGSD100 datasheet, SGSD100 pinout, SGSD100 application, or SGSD100 equivalent, this page delivers verified electrical specs, thermal data, safe operating area context, complementary pairing with SGSD200, and real-world switching/linear use cases - all grounded in ST's January 2008 Rev 4 datasheet.

Technical Context

The SGSD100 implements a monolithic Darlington pair with integrated emitter-follower driver stage, delivering hFE ≥ 600 at IC = 5 A and ≥ 300 at IC = 20 A (TC = 100°C), enabling low-base-drive switching in high-current loads. Its VCE(sat) remains ≤ 1.2 V at IC = 10 A / IB = 40 mA, supporting efficient linear and saturated operation.

It features built-in protection against second breakdown (Es/b = 250 mJ at VCC = 30 V, L = 3 mH) and operates up to TJ = 150°C, with Rthj-case = 0.96°C/W ensuring thermal manageability in forced-air or heatsink-mounted designs.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO80 V - Maximum sustainable collector-emitter voltage under open-base condition, defining safe blocking capability in switching applications.
IC (cont.)25 A - Continuous DC collector current rating at TC ≤ 25°C, usable up to 20 A at elevated case temperatures per derating curve.
PTOT130 W - Total power dissipation limit at TC = 25°C; requires heatsink with thermal resistance ≤ 0.96°C/W for full-rated operation.
hFE600–5000 - DC current gain range across IC = 5–20 A and TC = 25–100°C, enabling predictable base drive sizing without external feedback.
VCE(sat)0.95–2.3 V - Saturation voltage span across IC = 5–20 A and IB = 20–80 mA, directly impacting conduction loss and thermal load in on-state operation.
Rthj-case0.96 °C/W - Junction-to-case thermal resistance, critical for calculating maximum allowable case temperature at given power dissipation.

Pinout & Package

SGSD100 is housed in a TO-247 plastic package with three terminals: Collector (pin 1), Base (pin 2), and Emitter (pin 3), mounted on a single-plane flange for mechanical stability and thermal transfer to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
1 (Collector)Main high-current output nodeConnected to load supply rail; carries full switched current and must be routed with low-inductance, high-current PCB traces or busbars.
2 (Base)Control input for Darlington pairRequires ~80 mA drive for 20 A collector current; sensitive to noise and needs local decoupling near transistor mounting point.
3 (Emitter)Current return path and reference nodeServes as common emitter for both Darlington stages; must be low-impedance connection to ground/power return plane.

Key Features

FeatureDesign Value
Monolithic Darlington structureSingle-die integration eliminates inter-device mismatch and parasitic inductance, improving switching consistency and reducing layout sensitivity.
High hFE at high currentMinimum hFE = 300 at IC = 20 A enables simple TTL/CMOS-compatible base drive without external amplification stages.
Second breakdown energy ratingEs/b = 250 mJ (VCC = 30 V, L = 3 mH) ensures robustness during inductive turn-off transients in motor and relay drivers.
ECOPACK® lead-free packagingMeets JEDEC JESD97 marking standards and RoHS compliance without sacrificing thermal or mechanical performance in TO-247 form factor.

Applications

Audio Power AmplifierDC-AC Converter

Use Scenario: Output stage in Class AB audio amplifiers driving 4–8 Ω speakers with peak currents >15 A.

IC Role / Device Role / Timing Role: High-current, linear-mode output transistor delivering low-distortion analog signal amplification.

Use Value: VCE(sat) ≤ 1.2 V and hFE ≥ 500 at 10 A ensure minimal voltage drop and stable bias control across thermal cycles.

Use Scenario: Switching element in push-pull or half-bridge inverters converting 12–48 V DC to 50/60 Hz AC for lighting or small appliances.

IC Role / Device Role / Timing Role: High-current, medium-voltage switching transistor handling repetitive inductive load commutation.

Use Value: Second breakdown energy of 250 mJ and 80 V VCEO support reliable operation under reactive load stress without snubber networks.

Low-Voltage DC Motor DriverGeneral Purpose Switching

Use Scenario: H-bridge or single-ended driver for brushed DC motors in industrial actuators or automotive auxiliary systems (12–24 V, <20 A).

IC Role / Device Role / Timing Role: Main current-handling switch controlled via PWM or logic-level gate driver.

Use Value: Low base drive requirement (IB = 40 mA for IC = 10 A) simplifies interface with microcontrollers and reduces driver component count.

Use Scenario: Solid-state relay replacement or high-power load switching in PLC output modules, battery management systems, or HVAC controls.

IC Role / Device Role / Timing Role: Robust, discrete high-current switch replacing electromechanical relays in industrial control panels.

Use Value: 130 W power rating and 150°C max junction temperature allow sustained operation in enclosed, convection-cooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power Darlington transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TIP142Lower VCEO (100 V vs. 80 V), lower hFE (1000 typ. vs. 5000 max), TO-218 package (higher Rthj-case = 1.5°C/W)Acceptable in higher-voltage but lower-current linear applications where thermal margin is less constrained.Select when legacy footprint compatibility with TO-218 is required and VCEO margin >20 V is needed.
MJD127TO-220AB package (Rthj-case = 3.0°C/W), lower IC (8 A), lower PTOT (50 W), same VCEO (80 V)Suitable only for <10 A intermittent loads; not viable for continuous 20 A operation or audio output stages.Choose only for space-constrained, low-power switching where TO-247 mounting is impractical.

Compared with TIP142 and MJD127, SGSD100 offers superior thermal performance (0.96°C/W), higher current gain at full load, and optimized SOA for inductive switching - making it preferred for high-reliability, high-current linear and switching roles where heatsink efficiency and base drive simplicity are critical.

Availability

SGSD100 is available at Aetrix Electronics and suitable for audio power amplifier output stages, DC-AC converter switching nodes, and low-voltage DC motor driver circuits requiring stable component supply across industrial production lifecycles.

Supply support for SGSD100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The SGSD100 belongs to ST's high-power bipolar transistor product line, engineered specifically for robust, high-current linear and switching applications where monolithic Darlington architecture delivers predictable gain and thermal stability.

FAQ

Is SGSD100 pin-compatible with SGSD200?

No - SGSD100 (NPN) and SGSD200 (PNP) share identical TO-247 pinout (C-B-E), but polarity reversal means they cannot be substituted without circuit redesign. Their complementary pairing is intended for push-pull or H-bridge topologies where matched thermal and gain characteristics are required across both polarities.

What is the recommended minimum base resistor value for 10 A collector current?

At IC = 10 A and TC = 100°C, hFE ≥ 500 guarantees IB ≥ 20 mA. With VBE(sat) ≈ 2.5 V and typical 5 V logic drive, RB ≤ (5 V − 2.5 V) / 20 mA = 125 Ω. A 100 Ω ±5% resistor provides safe margin while limiting base power dissipation to <625 mW.

Does SGSD100 require a flyback diode when driving inductive loads?

Yes - although rated for second breakdown energy (250 mJ), the SGSD100 lacks integrated clamping. A fast recovery or Schottky flyback diode (e.g., STTH1R06) must be placed across the inductive load to suppress VL = −L·di/dt voltage spikes that exceed 80 V and risk avalanche failure.

Can SGSD100 be used in parallel configurations?

Not recommended without individual emitter resistors - due to positive temperature coefficient of VBE(sat), paralleling increases current imbalance. If required, use 0.1 Ω ±1% emitter resistors per device and ensure matched mounting, heatsinking, and trace lengths to maintain <10% current sharing error at full load.

SGSD100 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
25 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 80mA, 20A
Current - Collector Cutoff (Max):
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 10A, 3V
Power - Max:
130 W
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

SGSD100 FAQ

1.How can I place an order for SGSD100 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGSD100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGSD100 reliable?

The price and inventory of SGSD100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGSD100 is usually 5 days.

3.What payment methods are accepted for SGSD100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGSD100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGSD100?

SGSD100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGSD100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGSD100?

For technical support, including SGSD100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGSD100 requirements.

6.How does Aetrix verify that SGSD100 is sourced from the original manufacturer or authorized distributors?

All SGSD100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGSD100 meets industry standards.

7.What is the process for return or replacement of SGSD100?

All SGSD100 units undergo pre-shipment inspection (PSI). If there is an issue with SGSD100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGSD100 part is unused and in its original packaging.

Return procedure for SGSD100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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