STMicroelectronics SGSD200
- Part No.:
- SGSD200
- Manufacturer:
- STMicroelectronics
- Category:
- Single Bipolar Transistors
- Package:
- TO-247-3
- Datasheet:
-
SGSD200.pdf
- Description:
- TRANS PNP DARL 80V 25A TO-247-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SGSD200 from STMicroelectronics is a complementary PNP power Darlington transistor in monolithic configuration, rated for 80 V VCEO, 25 A continuous collector current, and 130 W total dissipation at TC ≤ 25°C, used as output stage driver in audio amplifiers and low-voltage DC motor control circuits.
For engineers reviewing the SGSD200 datasheet, SGSD200 pinout, SGSD200 application, or SGSD200 equivalent, key selection factors include its VCE(sat) of 1.2 V at IC = 10 A / IB = 40 mA, hFE ≥ 500 at IC = 5 A, TO-247 thermal resistance of 0.96 °C/W, and second-breakdown energy rating of 250 mJ under pulsed inductive load conditions.
Technical Context
The SGSD200 operates as a high-gain, high-current PNP Darlington pair with integrated emitter-base diode (VF = 1.2 V at IF = 5 A), enabling direct drive from logic-level or low-power base drivers. Its monolithic construction ensures matched thermal behavior with its NPN complement SGSD100.
Designed for linear and switching operation up to 150 °C junction temperature, it supports safe operating area (SOA) compliance under inductive loads (L = 3 mH, VCC = 30 V) and delivers stable hFE ≥ 300 even at IC = 20 A and TC = 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum collector-emitter voltage with base open; defines maximum supply rail compatibility in amplifier or switching stages |
| IC | 25 A - Continuous collector current capability; supports high-power audio output or motor drive without forced cooling |
| PTOT | 130 W - Total power dissipation at case temperature ≤ 25°C; requires heatsink design based on Rthj-case = 0.96 °C/W |
| VCE(sat) | 1.2 V @ IC = 10 A / IB = 40 mA - Low saturation voltage reduces conduction loss and heat generation in switching applications |
| hFE | ≥ 500 @ IC = 5 A - High DC current gain enables low-base-drive-current operation, easing driver circuit design |
| Rthj-case | 0.96 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement for thermal stability |
Pinout & Package
SGSD200 is housed in a TO-247 plastic package with three terminals: Collector (pin 1), Base (pin 2), and Emitter (pin 3), mounted on a single-plane metal tab for mechanical mounting and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main current sink terminal | Connected to high-side supply rail in PNP switch or emitter-follower output stage; electrically isolated from mounting surface |
| 2 (Base) | Control input | Receives base current to enable conduction; requires external current-limiting resistor when driven from logic or op-amp |
| 3 (Emitter) | Main current source terminal | Typically tied to positive supply in high-side switch or serves as output node in complementary amplifier output stage |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington structure | Integrated PNP pair with built-in base-emitter resistor network ensures consistent gain and thermal tracking vs discrete implementations |
| High SOA robustness | 250 mJ second-breakdown energy at VCC = 30 V / L = 3 mH enables reliable operation in inductive switching without snubbers |
| ECOPACK® lead-free packaging | RoHS-compliant TO-247 with lead-free second-level interconnect, marked per JEDEC JESD97 for traceable environmental compliance |
| Wide operating temperature | Rated for TJ up to 150 °C and Tstg from –65 to +150 °C, supporting industrial and automotive under-hood environments |
Applications
| Audio Power Amplifier | DC–AC Converter |
|---|---|
Use Scenario: Output stage in Class AB or Class B audio amplifiers delivering >50 W into 4 Ω or 8 Ω loads. IC Role / Device Role / Timing Role: PNP Darlington output transistor providing high-current sourcing capability in complementary push-pull topology. Use Value: Low VCE(sat) minimizes crossover distortion and improves efficiency; high hFE reduces driver-stage loading. | Use Scenario: High-side switch in half-bridge or full-bridge inverters converting 12–48 V DC to 50/60 Hz AC for lighting or small appliances. IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN (SGSD100) for synchronized high-side conduction in bridge legs. Use Value: Matched SOA and thermal characteristics with SGSD100 ensure balanced current sharing and reliability under reactive loads. |
| Low-Voltage DC Motor Driver | General Purpose Switching |
Use Scenario: H-bridge or single-ended driver for brushed DC motors in robotics, actuators, or power tools operating at ≤40 V. IC Role / Device Role / Timing Role: High-current PNP switch controlling motor direction or enabling braking via emitter-follower configuration. Use Value: 25 A IC and 40 A ICM support peak stall currents; integrated diode aids freewheeling path design. | Use Scenario: Solid-state relay replacement or high-power load switching in industrial control panels, battery management, or power sequencing. IC Role / Device Role / Timing Role: General-purpose high-current PNP switch activated by microcontroller GPIO or optocoupler-isolated base drive. Use Value: TO-247 package allows direct heatsink mounting; 130 W dissipation supports sustained 10–20 A switching without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD213 | TO-220 package, lower PTOT (50 W), Rthj-case = 2.5 °C/W, VCE(sat) = 1.5 V @ IC = 5 A | Limited to ≤15 A continuous use; unsuitable for high-power audio or motor drive without aggressive heatsinking | Select when board space or cost constraints preclude TO-247, and power demand stays below 30 W. |
| BDW93C | TO-220AB package, same VCEO (80 V), but hFE = 750–2000 (lower min), no specified second-breakdown energy | Less robust under inductive switching transients; not recommended for DC–AC converters with reactive loads | Prefer where high DC gain is critical but SOA margin is secondary, e.g., linear regulator pass devices. |
Compared with MJD213 and BDW93C, SGSD200 offers superior thermal performance (0.96 °C/W), verified 250 mJ second-breakdown energy, and guaranteed hFE ≥ 500 at 10 A-making it uniquely suited for high-reliability, high-current linear and switching applications requiring SOA integrity.
Availability
SGSD200 is available at Aetrix Electronics and suitable for audio power amplifiers, DC–AC converters, low-voltage DC motor drivers, and general-purpose high-current switching applications requiring stable component supply across production lifecycles.
Supply support for SGSD200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and system-on-chip solutions.
The SGSD200 belongs to ST's high-power bipolar transistor product line, engineered specifically for robust linear amplification and high-current switching in industrial, audio, and power conversion systems.
FAQ
Is SGSD200 pin-compatible with SGSD100?
No-SGSD200 (PNP) and SGSD100 (NPN) share identical TO-247 mechanical footprint and terminal numbering (Collector–Base–Emitter), but their polarities are complementary. They are designed for pairing in push-pull or bridge configurations, not direct substitution. Electrical connections must respect PNP/NPN polarity reversal.
What is the maximum safe base current for continuous operation?
The absolute maximum continuous base current is 6 A (IB), per Table 2. However, typical operation uses IB = 40 mA for IC = 10 A (hFE ≈ 250) or IB = 80 mA for IC = 20 A. Sustained base currents above 1 A require careful thermal analysis of the base region and PCB trace width.
Does SGSD200 include an integrated flyback diode?
Yes-the device integrates a monolithic emitter-base diode (VF = 1.2 V at IF = 5 A) as part of its Darlington structure. This diode conducts during reverse-biased turn-off events and supports freewheeling current paths in inductive loads, reducing need for external clamp diodes in many motor or relay drive designs.
Can SGSD200 be used in parallel for higher current capacity?
Parallel operation is not recommended without individual emitter resistors and matched thermal mounting. The datasheet does not specify current-sharing characteristics between units. For >25 A requirements, ST recommends using a single higher-rated device or verifying matching via hFE binning and thermal coupling in prototype testing.
SGSD200 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 25 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 3.5V @ 80mA, 20A
- Current - Collector Cutoff (Max):
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 10A, 3V
- Power - Max:
- 130 W
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
SGSD200 FAQ
1.How can I place an order for SGSD200 through Aetrix?
Please submit a Request for Quotation (RFQ) for SGSD200 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SGSD200 reliable?
The price and inventory of SGSD200 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGSD200 is usually 5 days.
3.What payment methods are accepted for SGSD200?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGSD200 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SGSD200?
SGSD200 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SGSD200 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SGSD200?
For technical support, including SGSD200 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGSD200 requirements.
6.How does Aetrix verify that SGSD200 is sourced from the original manufacturer or authorized distributors?
All SGSD200 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGSD200 meets industry standards.
7.What is the process for return or replacement of SGSD200?
All SGSD200 units undergo pre-shipment inspection (PSI). If there is an issue with SGSD200, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SGSD200 part is unused and in its original packaging.
Return procedure for SGSD200:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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