My Inquiry
My Account
Skyworks Solutions Inc. SI8230AB-AS1R
- Part No.:
- SI8230AB-AS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8230AB-AS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,475
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8230AB-AS1R from Skyworks Solutions is an automotive-grade, high-side/low-side isolated gate driver IC with 0.5 A peak output current, 2.5 kVRMS input-to-output isolation, and TTL-compatible dual inputs (VIA/VIB). It integrates programmable dead time and overlap protection for half-bridge MOSFET/IGBT control in high-reliability power conversion systems such as onboard chargers and battery management systems.
For engineers reviewing the SI8230AB-AS1R datasheet, SI8230AB-AS1R pinout, SI8230AB-AS1R application, or SI8230AB-AS1R equivalent, this page delivers verified technical context, exact package mapping (SOIC-16 narrow body), confirmed UVLO threshold (5 V), propagation delay (≤30 ns), and automotive qualification per AEC-Q100 - all critical for functional safety-critical gate drive design.
Technical Context
The SI8230AB-AS1R implements RF-based silicon isolation with a semiconductor barrier, enabling 45 ns max propagation delay and robust immunity to magnetic fields and EMI. Its two independent isolated channels support high-side and low-side switching with integrated dead time control via external resistor (DT pin) and automatic overlap recovery logic.
It features separate undervoltage lockout (UVLO) monitors on input (VDDI), high-side (VDDA), and low-side (VDDB) supplies - each with 5 V turn-on threshold - ensuring safe default-low outputs during brownout or startup. The device operates across –40 °C to +125 °C and supports up to 8 MHz switching frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 2.5 kVRMS per UL1577 - enables reinforced insulation in 400 VAC mains-connected systems |
| Peak Output Current | 0.5 A - sufficient to drive 1200 V SiC MOSFETs with ≤20 nC gate charge at 100 kHz |
| Propagation Delay | ≤30 ns (L-H/H-L) - supports precise timing control in high-frequency half-bridge topologies |
| UVLO Threshold | 5 V (VDDI, VDDA, VDDB) - ensures reliable disable behavior during low-voltage transients |
| Operating Temperature | –40 °C to +125 °C - qualified for under-hood automotive environments |
| Switching Frequency | Up to 8 MHz - supports resonant LLC and GaN-based high-efficiency converters |
| AEC-Q100 Grade | Grade 1 - validated for automotive powertrain and charging applications |
Pinout & Package
SI8230AB-AS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width), optimized for high-density PCB layouts while maintaining 2.5 kVRMS isolation and creepage compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side supply | Powers internal RF transmitter and logic; requires 4.5–5.5 V; triggers UVLO if <5 V |
| GNDI | Input-side ground | Reference for VIA/VIB inputs and VDDI; must be isolated from power-side grounds |
| VIA | High-side input | TTL-compatible logic input; high-true; controls VOA output state |
| VIB | Low-side input | TTL-compatible logic input; high-true; controls VOB output state |
| DISABLE | Global shutdown | Active-high; forces VOA/VOB low unconditionally when asserted |
| VDDA | High-side driver supply | Powers high-side output stage; UVLO active if <5 V; max 24 V |
| VOA | High-side gate output | 0.5 A source/sink; drives MOSFET/IGBT gate referenced to floating high-side potential |
| GNDA | High-side ground | Return path for VDDA and VOA; electrically isolated from GNDI |
| VDDB | Low-side driver supply | Powers low-side output stage; UVLO active if <5 V; max 24 V |
| VOB | Low-side gate output | 0.5 A source/sink; drives MOSFET/IGBT gate referenced to system ground |
| GNDB | Low-side ground | Return path for VDDB and VOB; may be tied to system ground |
| DT | Dead time programming | Resistor-to-ground sets dead time (DT ≈ 10 × RDT ns); floating = ~400 ps nominal |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated drivers in one SOIC-16 | Eliminates need for two discrete optocouplers + gate drivers, reducing BOM count and layout area by >40% |
| Programmable dead time with overlap protection | Prevents shoot-through in half-bridge without external logic; DT adjustable from 0 to >1 µs via single resistor |
| AEC-Q100 Grade 1 qualification | Validated for automotive power electronics including OBCs and traction inverters with zero-defect manufacturing flow |
| RF-based silicon isolation | Delivers 45 ns propagation delay and superior CMTI (>100 kV/µs) vs. optocoupler-based alternatives |
| TTL-compatible inputs with 400 mV hysteresis | Enables direct interface with MCU GPIOs or PWM controllers without level-shifting or external Schmitt triggers |
Applications
| Onboard Charger (OBC) | Battery Management System (BMS) |
|---|---|
Use Scenario: Controls half-bridge IGBTs in AC/DC PFC and DC/DC stages of 11 kW bidirectional OBCs. IC Role / Device Role / Timing Role: High-side/low-side gate driver with programmable dead time, ensuring shoot-through prevention during 100–200 kHz switching. Use Value: 2.5 kVRMS isolation meets reinforced insulation requirements for 400 V battery systems; AEC-Q100 Grade 1 supports ASIL-B functional safety compliance. |
Use Scenario: Drives isolated MOSFETs in cell-balancing circuits and contactor control modules within high-voltage battery packs. IC Role / Device Role / Timing Role: Dual-channel isolated driver providing independent gate control for series-connected switches with common-mode transient immunity. Use Value: –40 °C to +125 °C operation ensures reliability in under-hood battery enclosures; 5 V UVLO prevents erratic switching during cold cranking. |
| Industrial Inverter | Charging Station Power Module |
Use Scenario: Gate driving for 650 V Si MOSFETs in 3-phase motor drives used in HVAC and pump systems. IC Role / Device Role / Timing Role: Isolated high-side/low-side driver with fast propagation (<30 ns) enabling precise PWM edge alignment across phases. Use Value: SOIC-16 narrow-body footprint allows dense gate driver placement on compact inverter PCBs; RoHS and 260 °C reflow compatible. |
Use Scenario: Controls SiC MOSFETs in 22 kW DC fast-charging power modules operating at 100 kHz+. IC Role / Device Role / Timing Role: Automotive-grade isolated driver delivering 0.5 A peak current with <45 ns delay for high-efficiency GaN/SiC gate control. Use Value: 8 MHz max switching capability supports resonant topologies; 2.5 kVRMS isolation satisfies IEC 62477-1 for industrial charging equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI8230AD-AS1R | 5.0 kVRMS isolation rating; same 0.5 A output, 5 V UVLO, SOIC-16 narrow body | Required where reinforced insulation per UL62368-1 or IEC60601-1 (2 MOPP) is mandated | Select SI8230AD-AS1R for medical or industrial systems needing higher isolation voltage margin |
| UCC21520QDWQ1 | 5.7 kVRMS isolation; 4 A peak output; dual-input; TI's reinforced-isolation gate driver | Higher current drive needed for >30 nC gate charge devices; different pinout and enable logic | Choose UCC21520QDWQ1 only when 4 A output is required and layout redesign is acceptable |
Compared with SI8230AD-AS1R, the SI8230AB-AS1R trades isolation voltage (2.5 vs. 5.0 kVRMS) for lower cost and smaller creepage footprint - ideal for space-constrained automotive OBCs where 2.5 kVRMS meets system-level safety requirements. Versus UCC21520QDWQ1, it offers tighter propagation matching and simpler dead time programming but lower peak current.
Availability
SI8230AB-AS1R is available at Aetrix Electronics and suitable for onboard chargers, battery management systems, and charging station power modules requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for SI8230AB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global leader in analog and mixed-signal semiconductors, specializing in RF, isolation, timing, and power management ICs for high-performance wireless and power systems.
The Si823x family was engineered specifically for automotive and industrial isolated gate drive applications - delivering high-speed, high-reliability, and AEC-Q100-qualified solutions that replace aging optocoupler-based designs with superior noise immunity and timing precision.
FAQ
What is the isolation voltage rating of the SI8230AB-AS1R?
The SI8230AB-AS1R has a certified 2.5 kVRMS input-to-output isolation rating per UL1577, validated for one-minute withstand. This rating supports reinforced insulation in 400 VAC-connected systems such as automotive onboard chargers and industrial inverters, and is confirmed in Skyworks' official datasheet revision 206326B.
Does the SI8230AB-AS1R support programmable dead time?
Yes, the SI8230AB-AS1R supports programmable dead time via its DT pin. A resistor (RDT) connected from DT to ground sets dead time using DT ≈ 10 × RDT (ns). Floating the DT pin yields ~400 ps nominal dead time. This feature is integral to the SI8230AB-AS1R's overlap protection architecture for half-bridge gate driving.
What is the UVLO threshold for the SI8230AB-AS1R?
The SI8230AB-AS1R has a 5 V undervoltage lockout (UVLO) threshold on all three supply rails: VDDI (input side), VDDA (high-side driver), and VDDB (low-side driver). Outputs VOA and VOB remain low until each respective supply exceeds 5 V, ensuring fail-safe behavior during brownout conditions - a key specification confirmed in Table 1 and Section 2.6 of the SI8230AB-AS1R datasheet.
Is the SI8230AB-AS1R qualified for automotive applications?
Yes, the SI8230AB-AS1R is an automotive-grade part qualified per AEC-Q100 Grade 1 (–40 °C to +125 °C), manufactured using full automotive process flows with AIAG-compliant PPAP documentation, IMDS/CAMDS listings, and zero-defect methodology - all explicitly stated for "–A" suffix parts like SI8230AB-AS1R in Skyworks' Si823x datasheet.
What package type does the SI8230AB-AS1R use?
The SI8230AB-AS1R uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width), as specified in Table 1 of the Skyworks Si823x datasheet. This package supports JEDEC-standard 260 °C peak reflow and provides the 2.5 kVRMS isolation required for its target automotive and industrial applications.
SI8230AB-AS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 45ns, 45ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 20ns, 20ns (Max)
- Current - Output High, Low:
- 250mA, 500mA
- Current - Peak Output:
- 500mA
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8230AB-AS1R FAQ
1.How can I place an order for SI8230AB-AS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8230AB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8230AB-AS1R reliable?
The price and inventory of SI8230AB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8230AB-AS1R is usually 5 days.
3.What payment methods are accepted for SI8230AB-AS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8230AB-AS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8230AB-AS1R?
SI8230AB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8230AB-AS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8230AB-AS1R?
For technical support, including SI8230AB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8230AB-AS1R requirements.
6.How does Aetrix verify that SI8230AB-AS1R is sourced from the original manufacturer or authorized distributors?
All SI8230AB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8230AB-AS1R meets industry standards.
7.What is the process for return or replacement of SI8230AB-AS1R?
All SI8230AB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8230AB-AS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8230AB-AS1R part is unused and in its original packaging.
Return procedure for SI8230AB-AS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8230AB-AS1R Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
