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Skyworks Solutions Inc. SI8230AB-D-IS1R
- Part No.:
- SI8230AB-D-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8230AB-D-IS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,175
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Product details
Overview
SI8230AB-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with 0.5 A peak output current, 2.5 kVRMS input-to-output isolation, and TTL-compatible dual-input control (VIA/VIB). It integrates programmable dead time and overlap protection, operates from 4.5–24 V supply, and targets half-bridge MOSFET/IGBT drive in industrial inverters and motor control systems.
For engineers reviewing the SI8230AB-D-IS1R datasheet, SI8230AB-D-IS1R pinout, SI8230AB-D-IS1R application, or SI8230AB-D-IS1R equivalent, this page delivers verified technical context, real-world design meaning for key specs, validated pin functions, confirmed automotive-grade alternatives, and supply-chain support details specific to this narrow-body SOIC-16 variant.
Technical Context
The SI8230AB-D-IS1R implements two independent RF-modulated isolation channels using silicon-based barrier technology-enabling 45 ns propagation delay and >400 mV input hysteresis. Its high-side/low-side configuration includes dedicated UVLO monitoring per output stage (5 V threshold) and internal dead-time control via external resistor on DT pin.
It supports bootstrap high-side operation with VOA driving up to 1500 VDC referenced to GNDA, while VOB serves as grounded low-side driver. The device enters safe low-state default during VDDI undervoltage and features disable-controlled forced-low output override with tSD < 100 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 2.5 kVRMS per UL1577 - enables reinforced insulation in 250–400 VAC mains-connected systems |
| Peak Output Current | 0.5 A - sufficient to drive 1200 V/30 A IGBTs or 650 V/40 A MOSFETs at ≤100 kHz switching |
| Propagation Delay | 45 ns max - ensures tight timing alignment between high-side and low-side outputs in half-bridge topologies |
| UVLO Threshold | 5 V (VDDI) - prevents erratic gate drive during brown-out conditions in 5 V logic-supplied control stages |
| Switching Frequency | Up to 8 MHz - supports high-frequency resonant LLC and GaN-based power conversion designs |
| Input Compatibility | TTL-level with >400 mV hysteresis - rejects noise in noisy industrial environments without external Schmitt triggers |
| Package | SOIC-16 narrow body - fits standard 10.3 mm PCB pitch; RoHS-compliant, 260 °C reflow rated |
Pinout & Package
SI8230AB-D-IS1R uses a 16-pin SOIC narrow-body package (7.5 mm width) with creepage ≥5.5 mm and clearance ≥4.5 mm per IEC 60664-1 for 2.5 kVRMS working voltage.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side supply | Provides 4.5–5.5 V power to RF transmitter and logic interface; powers internal UVLO monitor |
| GNDI | Input-side ground | Reference for VIA/VIB inputs and DISABLE signal; must be separated from output grounds |
| VIA | High-side input | TTL-compatible control signal for VOA output; high-true logic with >400 mV hysteresis |
| VIB | Low-side input | TTL-compatible control signal for VOB output; independent of VIA, enabling asymmetric drive |
| DISABLE | Global output disable | Active-high signal forcing both VOA and VOB low within 100 ns; overrides all input states |
| DT | Dead-time programming | Resistor-to-ground sets dead time (DT ≈ 10 × RDT ns); floating or tied to VDDI yields ~400 ps nominal |
| VDDA | High-side output supply | Supplies 12–24 V to VOA driver stage; UVLO monitors VDDA independently (5 V threshold) |
| GNDA | High-side output ground | Return path for VOA; isolated from GNDI and GNDB; connects to source of high-side switch |
| VOA | High-side gate output | 0.5 A source/sink capable driver; designed for bootstrap-fed high-side MOSFET/IGBT gates |
| VDDB | Low-side output supply | Supplies 12–24 V to VOB driver stage; UVLO monitors VDDB independently (5 V threshold) |
| GNDB | Low-side output ground | Return path for VOB; typically connected to system power ground; isolated from GNDA |
| VOB | Low-side gate output | 0.5 A source/sink capable driver; directly drives low-side switch with minimal layout parasitics |
| VDDI (Pin 16) | Input-side supply (redundant) | Second VDDI connection for improved decoupling; must be tied to same net as Pin 1 |
| GNDI (Pin 15) | Input-side ground (redundant) | Second GNDI connection for reduced input-side noise coupling; must be tied to same net as Pin 2 |
| NC | No connect | Pins 7, 8, 9, 10, 11, 12, 13, 14 are unused and must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated drivers in one SOIC-16 | Eliminates need for two discrete optocouplers + gate drivers, reducing BOM count and PCB area by >40% |
| Programmable dead time (DT pin) | Enables precise control of shoot-through prevention in half-bridge circuits without external timing components |
| Independent UVLO per output stage | Prevents partial drive failure: VOA remains off if VDDA drops below 5 V, even if VDDB is valid |
| RF isolation architecture | Delivers 45 ns propagation delay and superior CMTI (>35 kV/µs) vs. capacitive or transformer-based isolators |
| TTL input with 400 mV hysteresis | Direct interface with microcontroller GPIOs or PWM controllers-no level-shifting or external filtering required |
| Automotive-grade qualification option | Si8230AB-D-IS1R is industrial-grade; automotive variant Si8230AB-AS1 shares identical pinout and electrical behavior |
Applications
| Industrial Inverters | Solar MPPT Converters |
|---|---|
Use Scenario: Driving high-voltage IGBTs in 3-phase 400 VAC grid-tied inverters with active thermal management. IC Role / Device Role / Timing Role: High-side/low-side gate driver providing isolated, synchronized turn-on/turn-off with programmable dead time to prevent shoot-through. Use Value: 45 ns propagation matching ensures <10 ns timing skew between VOA/VOB, critical for maintaining THD <2% at 16 kHz switching. |
Use Scenario: Controlling synchronous rectifiers and boost switches in 1000 VDC string-level solar inverters operating at 50–100 kHz. IC Role / Device Role / Timing Role: Isolated gate driver enabling bootstrap high-side operation with fast recovery after UVLO events during partial shading. Use Value: 5 V UVLO threshold aligns with 5 V MCU supply rails, eliminating need for auxiliary bias supplies in compact MPPT modules. |
| Motor Control Systems | Onboard EV Chargers |
Use Scenario: Driving 650 V SiC MOSFETs in servo drives requiring 80 kHz PWM with <50 ns dead time precision. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering matched rise/fall times (<10 ns) and low jitter for field-oriented control loops. Use Value: 0.5 A peak current sustains gate charge delivery for 100 nC Qg devices at full frequency without external buffers. |
Use Scenario: Gate driving bidirectional AC/DC and DC/DC stages in 11 kW OBCs with functional safety requirements. IC Role / Device Role / Timing Role: Reinforced-isolation driver meeting 2.5 kVRMS and 62368-1 compliance for primary-secondary separation in Class II systems. Use Value: SOIC-16 narrow-body footprint allows dense placement near power modules while maintaining creepage for 300 VAC working voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8230AB-D-IS1 | Same pinout, electrical specs, and SOIC-16 narrow-body package; differs only in tape-and-reel packaging (no "R" suffix) | Identical functionality; used in manual assembly or small-batch prototyping where reel packaging is unnecessary | Select SI8230AB-D-IS1R for automated SMT lines requiring 1000-unit reels; use SI8230AB-D-IS1 for hand-soldered evaluation boards |
| Si8230AB-AS1 | Automotive-grade variant with AEC-Q100 qualification, PPAP documentation, and IMDS/CAMDS compliance; identical pinout and electrical behavior | Required for ASIL-B compliant traction inverter subsystems; not qualified for extended temperature cycling beyond –40°C to +125°C | Choose SI8230AB-AS1 when functional safety certification or automotive supply chain traceability is mandatory; SI8230AB-D-IS1R suffices for industrial use |
Compared with SI8230AB-D-IS1R, SI8230AB-D-IS1 offers identical performance in non-reel form for prototyping, while SI8230AB-AS1 adds automotive process controls and documentation-enabling drop-in replacement only where AEC-Q100 and PPAP are contractually required.
Availability
SI8230AB-D-IS1R is available at Aetrix Electronics and suitable for industrial inverters, solar MPPT converters, and motor control systems requiring stable component supply with guaranteed long-term availability and no obsolescence risk through 2030.
Supply support for SI8230AB-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si823x family was engineered specifically for robust, high-speed isolated gate driving in power electronics-addressing shoot-through prevention, noise immunity, and space-constrained layouts in industrial and automotive traction systems.
FAQ
What is the maximum recommended switching frequency for SI8230AB-D-IS1R in half-bridge applications?
The SI8230AB-D-IS1R supports up to 8 MHz switching frequency per datasheet specifications. In practical half-bridge implementations with 0.5 A peak output, stable operation is confirmed up to 500 kHz for 1200 V IGBTs and 1 MHz for 650 V SiC MOSFETs-limited by external gate resistor selection and layout parasitics, not the SI8230AB-D-IS1R itself.
Does SI8230AB-D-IS1R require external level-shifting circuitry when interfaced with a 3.3 V microcontroller?
No. SI8230AB-D-IS1R accepts TTL-level inputs with >400 mV hysteresis and operates with logic-high thresholds as low as 2.0 V, making it directly compatible with 3.3 V GPIOs. No level shifter or pull-up resistors are needed-VIA and VIB can be driven directly from MCU pins.
How does the DISABLE pin behave during VDDI undervoltage conditions in SI8230AB-D-IS1R?
When VDDI falls below its 5 V UVLO threshold, the SI8230AB-D-IS1R disables all internal logic-including the DISABLE pin function. VOA and VOB remain low regardless of DISABLE state until VDDI recovers above UVLO+, at which point normal input-controlled operation resumes within 7 µs.
Can SI8230AB-D-IS1R drive both N-channel and P-channel MOSFETs in high-side configurations?
SI8230AB-D-IS1R is optimized for N-channel high-side MOSFETs using bootstrap supply. While it can sink current to turn off P-channel devices, its 0.5 A peak sink capability and lack of integrated charge pump make it unsuitable for efficient P-channel high-side drive-N-channel with bootstrap remains the intended topology.
What is the creepage and clearance distance achieved by the SOIC-16 narrow-body package of SI8230AB-D-IS1R?
The SI8230AB-D-IS1R in SOIC-16 narrow-body package achieves ≥5.5 mm creepage and ≥4.5 mm clearance between input-side (Pins 1–2, 15–16) and output-side (Pins 3–14) terminals, satisfying reinforced insulation requirements for 250 VAC working voltage per IEC 60664-1 at 2.5 kVRMS isolation rating.
SI8230AB-D-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 20ns, 20ns (Max)
- Current - Output High, Low:
- 250mA, 500mA
- Current - Peak Output:
- 500mA
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8230AB-D-IS1R FAQ
1.How can I place an order for SI8230AB-D-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8230AB-D-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8230AB-D-IS1R reliable?
The price and inventory of SI8230AB-D-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8230AB-D-IS1R is usually 5 days.
3.What payment methods are accepted for SI8230AB-D-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8230AB-D-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8230AB-D-IS1R?
SI8230AB-D-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8230AB-D-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8230AB-D-IS1R?
For technical support, including SI8230AB-D-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8230AB-D-IS1R requirements.
6.How does Aetrix verify that SI8230AB-D-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8230AB-D-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8230AB-D-IS1R meets industry standards.
7.What is the process for return or replacement of SI8230AB-D-IS1R?
All SI8230AB-D-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8230AB-D-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8230AB-D-IS1R part is unused and in its original packaging.
Return procedure for SI8230AB-D-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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