Skyworks Solutions Inc. SI8230AD-D-IS3R

Overview

SI8230AD-D-IS3R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with 0.5 A peak output current, 5 kVRMS input-to-output isolation, and 5 V undervoltage lockout (UVLO) threshold. It integrates two independent isolated drivers in a single SOIC-14 wide-body package with increased creepage, designed for half-bridge MOSFET/IGBT control in industrial inverters and motor drives.

For engineers reviewing the SI8230AD-D-IS3R datasheet, SI8230AD-D-IS3R pinout, SI8230AD-D-IS3R application, or SI8230AD-D-IS3R equivalent, this page delivers verified specifications, functional context, real-world use cases, and validated alternative options - all grounded in Skyworks' official Si823x family documentation dated December 5, 2024.

Technical Context

The SI8230AD-D-IS3R implements RF-based on/off keying across a proprietary silicon isolation barrier, enabling robust noise immunity and eliminating startup initialization requirements. Its dual-channel architecture supports independent high-side (VOA) and low-side (VOB) gate drive with programmable dead time via external resistor (DT pin) and built-in overlap protection.

Each channel features TTL-compatible inputs (VIA/VIB) with >400 mV hysteresis, independent UVLO monitoring per supply domain (VDDI, VDDA, VDDB), and a dedicated DISABLE pin that forces both outputs low within tSD. Output logic follows direct mapping: VIA→VOA, VIB→VOB, with propagation delay ≤25 ns at 25°C and 12 V supply.

Key Specifications

Pinout & Package

SI8230AD-D-IS3R uses a 14-pin SOIC wide-body package with enhanced creepage distance, RoHS-compliant, and rated for 260 °C peak reflow per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with SI8230BD-D-IS3R, the SI8230AD-D-IS3R offers tighter 5 V UVLO alignment with standard 5 V MCU outputs, while UCC21520DWR provides higher drive capability at the cost of added external dead-time circuitry and non-pin-compatible layout.

Availability

SI8230AD-D-IS3R is available at Aetrix Electronics and suitable for industrial inverters, motor control systems, and onboard EV chargers requiring stable component supply, long-term lifecycle support, and AEC-Q100–compatible manufacturing traceability.

Supply support for SI8230AD-D-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si823x family was engineered specifically for high-reliability isolated gate driving in power conversion systems, emphasizing low propagation delay, high CMTI, and integrated safety features like programmable dead time and multi-rail UVLO.

FAQ

What is the isolation voltage rating of the SI8230AD-D-IS3R?

The SI8230AD-D-IS3R provides 5.0 kVRMS input-to-output isolation per UL 1577, certified for reinforced insulation in industrial and automotive applications. This rating applies across the full operating temperature range (–40 °C to +125 °C) and is validated for one-minute withstand testing. The isolation barrier uses Skyworks' proprietary silicon technology, not optocoupler-based or capacitive coupling.

Does the SI8230AD-D-IS3R support programmable dead time?

Yes, the SI8230AD-D-IS3R supports programmable dead time via its DT pin. A resistor (RDT) connected from DT to ground sets dead time using DT ≈ 10 × RDT (ns). For example, a 100 kΩ resistor yields ~1 µs dead time. Floating the DT pin defaults to ~400 ps. This feature is active only in high-side/low-side configurations like the SI8230AD-D-IS3R and prevents shoot-through in half-bridge topologies.

What is the UVLO threshold for the SI8230AD-D-IS3R input supply (VDDI)?

The SI8230AD-D-IS3R has a 5 V undervoltage lockout (UVLO) threshold on the input supply (VDDI), with VDDIUV+ = 5.0 V (typical) and VDDIUV– = 4.5 V (typical). This ensures reliable startup and shutdown behavior when powered from standard 5 V logic rails. Unlike the -BD variant (8 V UVLO), the -AD suffix guarantees compatibility with 5 V microcontrollers without external level shifting.

Can the SI8230AD-D-IS3R drive SiC MOSFETs effectively?

Yes, the SI8230AD-D-IS3R can drive low-to-mid gate-charge SiC MOSFETs (Qg ≤ 25 nC) at switching frequencies up to 1 MHz. Its 0.5 A peak output current, 25 ns max propagation delay, and >35 kV/µs CMTI meet essential requirements for SiC gate driving. For higher Qg devices (>35 nC) or >2 MHz operation, consider the 4 A SI8233AD-D-IS3R variant within the same family.

Is the SI8230AD-D-IS3R pin-compatible with other Si823x variants?

The SI8230AD-D-IS3R is pin-compatible with all Si823x devices in the SOIC-14 wide-body package (e.g., SI8230BD-D-IS3R, SI8233AD-D-IS3R), sharing identical pinout, footprint, and thermal pad configuration. However, functional differences exist - including UVLO threshold, peak output current, and input type (VIA/VIB vs. PWM) - so electrical validation is required before substitution.