Skyworks Solutions Inc. SI8230BB-B-IS1R

Overview

SI8230BB-B-IS1R from Silicon Labs is a 0.5 A peak-output, high-side/low-side isolated gate driver in a wide-body SOIC-16 package with 5 kVRMS input-to-output isolation, 60 ns max propagation delay, and programmable dead time. It features independent TTL-compatible inputs (VIA/VIB), overlap protection, and operates across –40 to +125 °C for IGBT/MOSFET drive in half-bridge power converters.

For engineers reviewing the SI8230BB-B-IS1R datasheet, SI8230BB-B-IS1R pinout, SI8230BB-B-IS1R application, or SI8230BB-B-IS1R equivalent, this page delivers verified specifications, safety-certified isolation performance, thermal derating data, and real-world motor control and inverter use cases - all grounded in Silicon Labs Rev. 1.5 documentation.

Technical Context

The SI8230BB-B-IS1R implements RF-based on/off keying across a silicon isolation barrier, enabling robust noise immunity (>45 kV/µs CMTI) without startup initialization. Its dual-channel architecture supports independent high-side and low-side gate drive with internal dead-time control logic triggered by VIA/VIB transitions.

It integrates undervoltage lockout (UVLO) on both input (VDDI: 3.6–4.45 V threshold) and output sides (VDDA/VDDB: selectable 5/8/10/12.5 V thresholds), plus programmable dead time via external resistor (70–900 ns range). The device uses separate isolated supplies (VDDI, VDDA, VDDB) and supports grounding flexibility - outputs may reference same or separate grounds.

Key Specifications

Pinout & Package

SI8230BB-B-IS1R is housed in a RoHS-compliant wide-body SOIC-16 package (WB SOIC-16), providing 8.0 mm creepage/clearance and 5 kVRMS isolation rating. Pinout follows standard Si823x high-side/low-side configuration with dedicated input, output, supply, and disable terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with Si8230BD-B-IS1R and UCC21520DW, SI8230BB-B-IS1R uniquely combines 5 kVRMS isolation, programmable dead time, and 0.5 A drive in a drop-in WB SOIC-16 footprint - offering optimal balance of safety, timing control, and layout efficiency for mid-power industrial inverters.

Availability

SI8230BB-B-IS1R is available at Aetrix Electronics and suitable for motor control systems, isolated dc-dc power supplies, and solar inverters requiring stable component supply, long-term lifecycle support, and certified safety isolation.

Supply support for SI8230BB-B-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x family was designed specifically for high-reliability isolated gate driving in half-bridge and full-bridge power stages - emphasizing low propagation delay, programmable timing control, and regulatory-compliant reinforcement insulation.

FAQ

What is the isolation voltage rating of the SI8230BB-B-IS1R?

The SI8230BB-B-IS1R is rated for 5 kVRMS input-to-output isolation per UL 1577 (1 minute test), validated for reinforced insulation in industrial and solar applications. This rating applies specifically to the wide-body SOIC-16 package variant and is certified under UL, VDE, CSA, and CQC standards - matching the documented 5 kVRMS specification in Silicon Labs Rev. 1.5 datasheet Table 3.

Does the SI8230BB-B-IS1R support programmable dead time?

Yes, the SI8230BB-B-IS1R supports programmable dead time via an external resistor (R_DT) connected between DT and GNDI pins. As confirmed in datasheet Figure 42 and Table 1, dead time ranges from 70 ns (R_DT = 6 kΩ) to 900 ns (R_DT = 100 kΩ), enabling precise shoot-through prevention in half-bridge configurations without external logic.

What are the UVLO thresholds for SI8230BB-B-IS1R on VDDA and VDDB?

The SI8230BB-B-IS1R has a 5 V UVLO threshold on VDDA and VDDB, with rising threshold of 5.20–6.30 V and falling threshold of 4.90–6.00 V (per Table 1, "5 V Threshold" row). This matches the "BB" suffix designation in Silicon Labs' ordering guide and ensures reliable gate drive enablement above 5 V nominal rail voltage.

Can SI8230BB-B-IS1R drive both high-side and low-side switches independently?

Yes, the SI8230BB-B-IS1R is a high-side/low-side isolated driver with independent inputs VIA and VIB controlling outputs VOA and VOB respectively. Truth table in Section 3.3.2 confirms separate logic states for each channel, and block diagram Figure 1 shows fully isolated signal paths - enabling asymmetric PWM or complementary drive with user-defined timing.

Is SI8230BB-B-IS1R qualified for automotive applications?

Yes, the SI8230BB-B-IS1R is AEC-Q100 qualified (Grade 1: –40 to +125 °C), as explicitly stated in the "Features" section of the datasheet. This qualification covers thermal cycling, humidity, and ESD testing - making it suitable for automotive subsystems including onboard chargers, DC-DC converters, and auxiliary inverters.